公开(公告)号：FR2690286A1

公开(公告)日：1993-10-22

申请号：FR9204791

申请日：1992-04-17

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： ENGIN MOLVA ,  ROGER ACCOMO ,  GUY FEUILLET ,  JOEL CIBERT ,  DANG LE SI ,  CLAIRE BODIN-DESHAYES

IPC: H01S5/00 ,  H01S3/0959 ,  H01S5/02 ,  H01S5/024 ,  H01S5/04 ,  H01S5/042 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S5/347 ,  H01S3/091

Abstract: Semi-conducting heterostructural dissymmetric laser cavity and laser equipped with this cavity. This laser cavity includes a first region (1) of composition varying from a first to a second face with a gap energy which decreases linearly from the first to the second face, for electron excitation, the creation of electron/hole pairs and an optical confinement for guiding light, a quantum well active emission region (2), a second region (3) of optical confinement for guiding light and of composition varying from a first to a second face with a gap energy which increases from the first to the second face, the active region being in contact with the first and second faces respectively of the third and first regions, a buffer region interposed between the second region and a substrate, the first and second regions being dissymmetric with respect to the active region and defining with the latter a dissymmetric GRINSCH.