公开(公告)号：FR2783970B1

公开(公告)日：2000-11-03

申请号：FR9812002

申请日：1998-09-25

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： JOURDE DOMINIQUE ,  TORC GERARD

IPC: H01L21/687 ,  H01L21/68

Abstract: The device for handling circular substrates comprises a ring (24) of exterior diameter equal to that of substrates, opening of interior diameter for setting the substrate (22), a manipulator (34) for the placement of the substrate, and means (36,38) for heating and cooling the ring and the substrate. The interior diameter of the ring is less than the diameter of the substrate, and the ring can be sufficiently dilated by heating, or the substrate contracted by cooling, to set the substrate in the ring. The substrate (22) is a semiconductor or ceramic wafer, e.g. a silicon wafer. The ring (24) is made of anodised aluminum, or of aluminum coated with resin for protection. The ring is provided with an interior edge for holding the substrate, and a cavity along the interior wall complementary to the edge of the substrate. The edge is with an acute angle (alpha), e.g. 60 deg., with respect to the plane of the ring. The means (36) for heating the ring comprise a retractable crown (40) containing resistance heaters. The means (38) for cooling comprise a sole (44) with the circulation of coolant.

公开(公告)号：FR2960340B1

公开(公告)日：2012-06-29

申请号：FR1053987

申请日：2010-05-21

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： FOURNEL FRANK ,  BALLY LAURENT ,  ZUSSY MARC ,  JOURDE DOMINIQUE

IPC: H01L21/00

公开(公告)号：FR2960340A1

公开(公告)日：2011-11-25

申请号：FR1053987

申请日：2010-05-21

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： FOURNEL FRANK ,  BALLY LAURENT ,  ZUSSY MARC ,  JOURDE DOMINIQUE

IPC: H01L21/00

Abstract: Procédé de réalisation d'un support (100) d'au moins un substrat, comportant au moins la mise en œuvre des étapes suivantes : - réalisation d'un empilement (118) comportant au moins deux substrats (102, 104), chacun des deux substrats comprenant deux faces principales (114) opposées, les deux substrats étant solidarisés l'un à l'autre tels qu'une des faces principales d'un premier des deux substrats soit disposée en regard d'une des faces principales du second des deux substrats et contre un matériau d'arrêt de gravure (120), - gravure, à travers le premier des deux substrats et avec arrêt sur le matériau d'arrêt de gravure, d'au moins un emplacement (122) apte à recevoir un substrat destiné à être supporté par le support.

公开(公告)号：FR2783970A1

公开(公告)日：2000-03-31

申请号：FR9812002

申请日：1998-09-25

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： JOURDE DOMINIQUE ,  TORC GERARD

IPC: H01L21/687 ,  H01L21/68

Abstract: The device for handling circular substrates comprises a ring (24) of exterior diameter equal to that of substrates, opening of interior diameter for setting the substrate (22), a manipulator (34) for the placement of the substrate, and means (36,38) for heating and cooling the ring and the substrate. The interior diameter of the ring is less than the diameter of the substrate, and the ring can be sufficiently dilated by heating, or the substrate contracted by cooling, to set the substrate in the ring. The substrate (22) is a semiconductor or ceramic wafer, e.g. a silicon wafer. The ring (24) is made of anodised aluminum, or of aluminum coated with resin for protection. The ring is provided with an interior edge for holding the substrate, and a cavity along the interior wall complementary to the edge of the substrate. The edge is with an acute angle (alpha), e.g. 60 deg., with respect to the plane of the ring. The means (36) for heating the ring comprise a retractable crown (40) containing resistance heaters. The means (38) for cooling comprise a sole (44) with the circulation of coolant.