公开(公告)号：US20210383977A1

公开(公告)日：2021-12-09

申请号：US17284044

申请日：2019-10-07

Applicant: COMMONWEALTH SCIENTIFIC AND INDUSTRIAL RESEARCH ORGANISATION

Inventor： Mei GAO ,  Chuantian ZUO ,  Doojin VAK

IPC: H01G9/00 ,  H01G9/20 ,  H01L51/00 ,  H01L51/42

Abstract: The invention provides a method of forming a perovskite film for an optoelectronic device, the method comprising: applying a perovskite precursor solution to at least one part of a hydrophilic region of a substrate, wherein the hydrophilic region is bounded by a hydrophobic boundary; allowing the perovskite precursor solution to spread over the hydrophilic region, wherein the perovskite precursor solution is retained within the hydrophilic region by at least a portion of the hydrophobic boundary; and drying the perovskite precursor solution to form a perovskite film on the hydrophilic region.