-
公开(公告)号:JPH02306508A
公开(公告)日:1990-12-19
申请号:JP8288090
申请日:1990-03-29
Applicant: COMP GENERALE ELECTRICITE
Inventor: KURISUTEIAN BURUE
Abstract: PURPOSE: To obtian a high critical current density similar to a value for a solid single crystal of a material by orientating the Cu-O face of a super- conducting crystal free of a cavity at tissues of a film adhered onto a substrate, common to and in parallel to a flat face of a surface of the substrate. CONSTITUTION: A tape 4 comprises a membrane three of a cavity consisting of a perovskite type super-conductive oxide having an peritectic decomposition near a congruent melting point, quasi-congruent melting point or eutectic point is provided at one of the faces based on a super-conductive oxide containing, includes a substrate of a flexible metal whose section is rectangular or a composite material, orientation of a C axis of super-conductive crystal whole membrane is 1 micrometer to 100 micrometers in thickness is vertical to a face of the substrate, and the Cu-O face is oriented common to and in parallel to the flat face of the face of the substrate. When this tape is manufactured, one end of the substrate is immersed in a pot 3 containing a dissolved solution 3 of the super-conductive oxide, the substrate is subject to heat treatment, and liquid- like membrane is continuously adhered.