公开(公告)号：CA1161173A

公开(公告)日：1984-01-24

申请号：CA364247

申请日：1980-11-07

Applicant: CONTROL DATA CORP

Inventor： HARTE KENNETH J ,  DOUGHERTY EDWARD C

IPC: H01J31/08 ,  G11C11/30 ,  H01J29/46 ,  H01J29/62 ,  H01J29/74 ,  H01J31/58 ,  H01J29/70

Abstract: An electron beam or other charged particle beam tube of the compound fly's eye type having a coarse deflection system is described. The beam tube comprises an evacuated housing together with an electron gun or other charged particle beam producing means disposed at one end of the evacuated housing for producing a beam of electrons or other charged particles. A coarse deflector, a compound micro lens assembly, and a fine deflector are disposed in the housing in the path of the electron or other charged particle beam for first selecting a lenslet and thereafter finely deflecting an electron or other charged particle beam to a desired spot on a target plane. The electron or other charged particle beam tube is designed in a manner such that the electron or other charged particle beam is caused to diverge at a small angle of divergence in advance of passing through the coarse deflector by appropriately locating the virtual origin or point source of the charged particle a small distance in advance of the coarse deflector. In addition, a dynamic focusing correction potential is supplied to the micro lens assembly along with a high voltage energizing potential with the dynamic focusing correction potential being derived from components of both the coarse deflection potentials and the fine deflection potentials.

公开(公告)号：CA1130929A

公开(公告)日：1982-08-31

申请号：CA385474

申请日：1981-09-09

Applicant: CONTROL DATA CORP

Inventor： HARTE KENNETH J

IPC: H01J29/54

Abstract: An electron beam tube electrostatic deflection system and method of operation is described. The electron beam tube includes an eight-fold deflector and means are provided for applying two different quadrupole correction electric potentials to selected ones of the eight-fold deflector members and for applying an octupole correction electrical potential to all eight deflector members. In the preferred embodiment, the quadrupole and octupole correction potentials applied to one set of four deflector members are represented by the respective values (V2c- ?), (-V2c- ?), (V2c- ?) and (-V2c- ?), and the quadrupole and octupole correction potentials applied to the second set of four deflector members are represented respectively by the values(V2s+ ?), (-V2s+ ?), (V2s+ ?) and (-V2s+ ?) where the quadrupole correction electric potential , (1) the quadrupole correction electric potential , (2) and the octupole correction potential ? applied to all eight of the eight-fold deflector members is given by the expression (3) where A2c, A2s and A4 are constants, Vx and Vy are the x and y deflection electric potentials, and -Vc is the cathode voltage of the electron gun used in the electron beam tube apparatus. In preferred arrangements, the electrostatic deflection system further includes means for applying a dynamic focusing electric potential to the objective lens assembly of the electron beam tube apparatus in conjunction with both the correction and deflection electric potentials described above. The dynamic focusing electric potential is (4) where ADF is a constant and VOBJ(O) is the uncorrected value of the direct current objective lens supply voltage. Both deflection and correction electric potentials are developed by an eight-fold deflector voltage generator which includes as its heart a novel octupole-quadrupole generator. The corrected electrostatic deflection system can be used in a simple electron beam tube structure employing only a single eight-fold deflector assembly for deflecting with low aberration a finely focused electron beam onto any desired address point on a target plane. Alternatively, the corrected electrostatic deflection system can be employed with a compound electron beam tube apparatus of the type employing a compound coarse and fine deflector system sometimes referred to as a fly's-eye type electron beam tube. In the compound electron be m tube apparatus, the eight-fold deflector assembly is employed as the coarse deflector assembly and preferably is fabricated in two eight-fold sections which are electrically interconnected.

公开(公告)号：AU3772778A

公开(公告)日：1980-01-10

申请号：AU3772778

申请日：1978-07-03

Applicant: CONTROL DATA CORP

Inventor： HARTE KENNETH J

IPC: H01J3/38 ,  G09G1/04 ,  G11C11/30 ,  H01J27/00 ,  H01J29/46 ,  H01J29/56 ,  H01J29/70 ,  H01J31/08 ,  H01J31/60 ,  H01J29/74 ,  H01J29/98

Abstract: An electron beam tube electrostatic deflection system and method of operation is described. The electron beam tube includes an eight-fold deflector and means are provided for applying two different quadrupole correction electric potentials to selected ones of the eight-fold deflector members and for applying an octupole correction electrical potential to all eight deflector members. In the preferred embodiment, the quadrupole and octupole correction potentials applied to one set of four deflector members are represented by the respective values (V2c - V), (-V2c - V), (V2c - V) and (-V2c - V), and the quadrupole and octupole correction potentials applied to the second set of four deflector members are represented respectively by the values (V2s + V), (-V2s + V), (V2s + V) and (-V2s + V) where the quadrupole correction electric potential V2c = [A2c(Vx2 - Vy2)]/Vc, (1) THE QUADRUPOLE CORRECTION ELECTRIC POTENTIAL V2s = (2A2s VxVy)/Vc, (2) AND THE OCTUPOLE CORRECTION POTENTIAL V applied to all eight of the eight-fold deflector members is given by the expression V = [A4(Vx4 - 6Vx2Vy2 + Vy4)]/4Vc3 (3) WHERE A2c, A2s and A4 are constants, Vx and Vy are the x and y deflection electric potentials, and -Vc is the cathode voltage of the electron gun used in the electron beam tube apparatus. In preferred arrangements, the electrostatic deflection system further includes means for applying a dynamic focusing electric potential to the objective lens assembly of the electron beam tube apparatus in conjunction with both the correction and deflection electric potentials described above. The dynamic focusing electric potential is VOBJ(DF) = VOBJ(0) + [(ADF(Vx2 + Vy2))/Vc](4) WHERE ADF is a constant and VOBJ(O) is the uncorrected value of the direct current objective lens supply voltage. Both deflection and correction electric potentials are developed by an eight-fold deflector voltage generator which includes as its heart a novel octupole-quadrupole generator.

公开(公告)号：CA1186067A

公开(公告)日：1985-04-23

申请号：CA403363

申请日：1982-05-20

Applicant: CONTROL DATA CORP

Inventor： SMITH DONALD O ,  HARTE KENNETH J

IPC: H01L21/027 ,  H01J37/30 ,  H01J37/317 ,  H01J29/70 ,  G03G5/00 ,  H01J37/00

Abstract: A multi-channel EBAL apparatus and method of operation employing a plurality of parallel operated electron beam channels with each electron beam channel being of the fly's eye array optics type having an electron gun for producing an electron beam, an array lenslet assembly and an associated fine deflector assembly together with a coarse deflector for selectively directing the electron beam to a desired array lenslet within the array lenslet assembly. The associated fine deflector element thereafter directs the electron beam to a desired point on a target surface such as a target semiconductor wafer being processed by electron beam lithography. A common movable stage is provided for supporting the target wafer surfaces below the plurality of parallel operated electron beam channels and for moving the target surfaces in common relative to the array optics axes of all of the electron beam channels. Common movement of all of the target surfaces is achieved automatically in preprogrammed manner preferably along either axis of an x-y translation mechanism. All of the electron beam channels are supported within a common housing which is evacuated along with the movable target platform which serves to move the target surfaces in common. The apparatus can be employed in conjunction with a pattern registration grid formed by means of a lenslet calibration grid and which provides fiducial marking signals for identifying the boundaries of the field of view of the respective lenslets in each electron beam channel as well as the field of view of all of the electron beam channels and for stitching together the required number of the fields of view to thereby cover a desired area of a target surface. Provision is made for accommodating the occurrence of any flawed lenslet assemblies by permuting the target surface so as to place any portion of a target surface that had been subject to a flawed lenslet to the view of an unflawed lenslet for subsequent electron beam treatment. Increased production capacity can be obtained by connecting a plurality of such EBAL apparatuses in parallel and controlling them in common by an overall system executive computer.

公开(公告)号：DE2829080A1

公开(公告)日：1979-04-12

申请号：DE2829080

申请日：1978-07-01

Applicant: CONTROL DATA CORP

Inventor： HARTE KENNETH J

IPC: H01J3/38 ,  G09G1/04 ,  G11C11/30 ,  H01J27/00 ,  H01J29/46 ,  H01J29/56 ,  H01J29/70 ,  H01J31/08 ,  H01J31/60 ,  H01J29/74 ,  H01J3/30

Abstract: An electron beam tube electrostatic deflection system and method of operation is described. The electron beam tube includes an eight-fold deflector and means are provided for applying two different quadrupole correction electric potentials to selected ones of the eight-fold deflector members and for applying an octupole correction electrical potential to all eight deflector members. In the preferred embodiment, the quadrupole and octupole correction potentials applied to one set of four deflector members are represented by the respective values (V2c - V), (-V2c - V), (V2c - V) and (-V2c - V), and the quadrupole and octupole correction potentials applied to the second set of four deflector members are represented respectively by the values (V2s + V), (-V2s + V), (V2s + V) and (-V2s + V) where the quadrupole correction electric potential V2c = [A2c(Vx2 - Vy2)]/Vc, (1) THE QUADRUPOLE CORRECTION ELECTRIC POTENTIAL V2s = (2A2s VxVy)/Vc, (2) AND THE OCTUPOLE CORRECTION POTENTIAL V applied to all eight of the eight-fold deflector members is given by the expression V = [A4(Vx4 - 6Vx2Vy2 + Vy4)]/4Vc3 (3) WHERE A2c, A2s and A4 are constants, Vx and Vy are the x and y deflection electric potentials, and -Vc is the cathode voltage of the electron gun used in the electron beam tube apparatus. In preferred arrangements, the electrostatic deflection system further includes means for applying a dynamic focusing electric potential to the objective lens assembly of the electron beam tube apparatus in conjunction with both the correction and deflection electric potentials described above. The dynamic focusing electric potential is VOBJ(DF) = VOBJ(0) + [(ADF(Vx2 + Vy2))/Vc](4) WHERE ADF is a constant and VOBJ(O) is the uncorrected value of the direct current objective lens supply voltage. Both deflection and correction electric potentials are developed by an eight-fold deflector voltage generator which includes as its heart a novel octupole-quadrupole generator.

公开(公告)号：CA1166362A

公开(公告)日：1984-04-24

申请号：CA399901

申请日：1982-03-31

Applicant: CONTROL DATA CORP

Inventor： HARTE KENNETH J ,  SMITH DONALD O

IPC: H01L21/027 ,  H01J37/304 ,  H01J37/317 ,  H01L21/42

Abstract: An electron-beam array lithography (EBAL) system and method of operation is described, employing an electron beam column of the array optics type having an array lens assembly, an array fine deflector assembly and a coarse deflector assembly for selectively directing an electron beam to a desired element of the array of lenslets and its associated element of the array of fine deflectors, where one or more of the lenslets in the array may be flawed. The method and system further comprises deriving fiducial marking signals from a lenslet stitching grid of fiducial elements, formed on a standard stitching target, for calibrating the boundaries of the fields of view of the respective elements of the array of lenslets. The fiducial marking signals are used to stitch together the individual fields of view of the elements in the array of lenslets in order to cover a desired area of a workpiece surface to be subsequently exposed to the electron beam, for example, the surface of a semiconductor wafer upon which a plurality of integrated circuit chips are to be formed. In the event of flawed lenslets in the array lens, the locations of those parts of the exposed area which were subject to the fields of view of flawed lenslets in the array lens assembly are mapped in a computer memory and this information is used to blank the electron beam during any period that the coarse deflector might be directing the beam to a flawed lenslet. The system and method then physically permutes the position of the exposed target area to a net physical position subject to the field of view of a different array of lenslets. Appropriate coarse and fine deflection signals are then obtained from the flawed lenslets, and the electron beam is then caused to retrace over these areas in accordance with the master pattern specifications for this area an the target surface whereby increased yield from the EBAL system is obtained.

公开(公告)号：CA1140197A

公开(公告)日：1983-01-25

申请号：CA365137

申请日：1980-11-20

Applicant: CONTROL DATA CORP

Inventor： BONO DAVID C ,  FISHBEIN MARVIN ,  HARTE KENNETH J

IPC: H01J3/18 ,  H01J37/12 ,  H01J37/305 ,  H01J37/317 ,  H01J29/62

Abstract: A unipotential electrostatic lens and method of operation for charged particle beam tubes of the electron beam, compound fly's eye type having both coarse and fine deflection sections wherein the objective lens assembly may lack coaxial symmetry about the lens axis. The unipotential lens comprises an assembly of axially aligned electrostatic lens elements with each lens element having an array of micro lenslet apertures and with each set of axially aligned micro lenslet apertures forming a micro lenslet. Preferably, there are three such lens elements in the assembly with a high voltage excitation potential supplied to the center lens element. A dynamic focus correction potential derived from the deflection potentials applied to the tube is supplied to the entrance outer lens element closest to the electron gun of the beam tube. The remaining outer lens element is maintained at system ground reference potential. In preferred arrangements, a fixed offset potential is added to the high voltage excitation potential supplied to the center lens element and a compensating offset potential is supplied to the entrance outer lens element along with the dynamic focusing correction potential to thereby distribute and minimize the effect of deflection sweep and astigmatism errors which otherwise might be introduced by the uncompensated dynamic focus correction potential.

公开(公告)号：AU521841B2

公开(公告)日：1982-05-06

申请号：AU3772778

申请日：1978-07-03

Applicant: CONTROL DATA CORP

Inventor： HARTE KENNETH J

IPC: H01J3/38 ,  G09G1/04 ,  G11C11/30 ,  H01J27/00 ,  H01J29/46 ,  H01J29/56 ,  H01J29/70 ,  H01J31/08 ,  H01J31/60 ,  H01J29/74 ,  H01J29/98

Abstract: An electron beam tube electrostatic deflection system and method of operation is described. The electron beam tube includes an eight-fold deflector and means are provided for applying two different quadrupole correction electric potentials to selected ones of the eight-fold deflector members and for applying an octupole correction electrical potential to all eight deflector members. In the preferred embodiment, the quadrupole and octupole correction potentials applied to one set of four deflector members are represented by the respective values (V2c - V), (-V2c - V), (V2c - V) and (-V2c - V), and the quadrupole and octupole correction potentials applied to the second set of four deflector members are represented respectively by the values (V2s + V), (-V2s + V), (V2s + V) and (-V2s + V) where the quadrupole correction electric potential V2c = [A2c(Vx2 - Vy2)]/Vc, (1) THE QUADRUPOLE CORRECTION ELECTRIC POTENTIAL V2s = (2A2s VxVy)/Vc, (2) AND THE OCTUPOLE CORRECTION POTENTIAL V applied to all eight of the eight-fold deflector members is given by the expression V = [A4(Vx4 - 6Vx2Vy2 + Vy4)]/4Vc3 (3) WHERE A2c, A2s and A4 are constants, Vx and Vy are the x and y deflection electric potentials, and -Vc is the cathode voltage of the electron gun used in the electron beam tube apparatus. In preferred arrangements, the electrostatic deflection system further includes means for applying a dynamic focusing electric potential to the objective lens assembly of the electron beam tube apparatus in conjunction with both the correction and deflection electric potentials described above. The dynamic focusing electric potential is VOBJ(DF) = VOBJ(0) + [(ADF(Vx2 + Vy2))/Vc](4) WHERE ADF is a constant and VOBJ(O) is the uncorrected value of the direct current objective lens supply voltage. Both deflection and correction electric potentials are developed by an eight-fold deflector voltage generator which includes as its heart a novel octupole-quadrupole generator.

公开(公告)号：CA1113612A

公开(公告)日：1981-12-01

申请号：CA306770

申请日：1978-07-04

Applicant: CONTROL DATA CORP

Inventor： HARTE KENNETH J

IPC: H01J3/38 ,  G09G1/04 ,  G11C11/30 ,  H01J27/00 ,  H01J29/46 ,  H01J29/56 ,  H01J29/70 ,  H01J31/08 ,  H01J31/60

Abstract: An electron beam tube electrostatic deflection system and method of operation is described. The electron beam tube includes an eight-fold deflector and means are provided for applying two different quadrupole correction electric potentials to selected ones of the eight-fold deflector members and for applying an octupole correction electrical potential to all eight deflector members. In the preferred embodiment, the quadrupole and octupole correction potentials applied to one set of four deflector members are represented by the respective values (V2c - ?),(-V2c - ?),(V2c - ?),and(-V2c - ?), and the quadrupole and octupole correction potentials applied to the second set of four deflector members are represented respectively by the values(V2s + ?), (-V2s + ?), (V2s + ?) and (-V2s + ?) where the quadrupole correction electric potential , (1) the quadrupole correction electric potential , (Z) and the octupole correction potential ? applied to all eight of the eight-fold deflector members is given by the expression (3) where Azc,A2s and A4 are constants, Vx and Vy are the x and y deflection electric potentials, and -Vc is the cathode voltage of the electron gun used in the electron beam tube apparatus. In preferred arrangements, the electrostatic deflection system further includes means for applying a dynamic focusing electric potential to the objective lens assembly of the electron beam tube apparatus in conjunction with both the correction and deflection electric potentials described above. The dynamic focusing electric potential is (4) where ADF is a constant and VOBJ(O) is the uncorrected value of the direct current objective lens supply voltage. Both deflection and correction electric potentials are developed by an eight-fold deflector voltage generator which includes as its heart a novel octupole-quadrupole generator. The corrected electrostatic deflection system can be used in a sample electron beam tube structure employing only a single eight-fold deflector assembly for deflecting with low aberration a finely focused electron beam onto any desired address point on a target plane. Alternatively, the corrected electrostatic deflection system can be employed with a compound electron beam tube apparatus of the type employing a compound coarse and fine deflector system sometimes referred to as a fly's-eye type electron beam tube. In the compound electron beam tube apparatus, the eight-fold deflector assembly is employed as the coarse deflector assembly and preferably is fabricated in two eight-fold sections which are electrically interconnected.