公开(公告)号：WO2004028952A2

公开(公告)日：2004-04-08

申请号：PCT/US2003/020057

申请日：2003-06-26

Applicant: CORNELL RESEARCH FOUNDATION, INC.

Inventor： SUBRAMANIAN, Kanakasabapathi ,  MACDONALD, Noel C.,

IPC: B81B

CPC classification number: B81C1/00142 ,  B81B2203/0361 ,  B81C1/00071 ,  B81C1/00111 ,  B81C2201/0112 ,  Y10S977/70 ,  Y10S977/762

Abstract: A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.

Abstract translation: 蚀刻和钝化化学物质之间的过程循环，以产生转变成小结构的粗糙侧壁。 在一个实施例中，使用掩模来限定单晶硅晶片中的线。 该过程在对应于循环的线的侧壁上产生波纹。 在一个实施例中，线被氧化以形成对应于每个纹波的硅线。 在另一个实施方案中去除氧化物以形成从微尖端到光线阵列的结构。 通过氧化相邻的波纹侧壁形成流体通道。 同样的掩模也用于形成MEMS器件的其他结构。