中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.022 seconds)

    Mems optical switch and method of manufacture
    1.
    发明专利
    Mems optical switch and method of manufacture 未知

    公开(公告)号：AU1488601A

    公开(公告)日：2001-07-24

    申请号：AU1488601

    申请日：2000-11-14

    Applicant: CORNING INC

    Inventor： COUILLARD JAMES G

    IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00 ,  G02B6/35

    Abstract: An optical switch on a planar optical circuit substrate includes a cantilevered arm having a control element selectively movable in a direction into the plane of the substrate into a waveguide slot of the substrate for switching optical signals carried by the waveguide. The arm can be actuated by thermal or piezoelectric actuators to deflect between a rest position allowing signal information from a waveguide to continue along the waveguide and a second position with the control element of the cantilevered arm extending into the slot for selectively blocking or changing the direction of the incoming signal. In an alternative embodiment of the invention, a second arm is provided which moves laterally and can be selectively actuated in sequence with the first cantilevered arm for overlying and latching the switching arm in the second or light controlling position, such that the MEMS switch can remain in an active state without further application of a control signal thereto. Arrays of MEMS switches are formed on a single wafer by selective etching and are bonded to arrays of optical waveguides to provide multiple switch modules.

    Method of making high aspect ratio features during surface micromachining
    2.
    发明专利
    Method of making high aspect ratio features during surface micromachining 未知

    公开(公告)号：AU1101601A

    公开(公告)日：2001-06-25

    申请号：AU1101601

    申请日：2000-10-23

    Applicant: CORNING INC

    Inventor： COUILLARD JAMES G ,  PAI MIN-FAN ,  TIEN NORMAN C

    IPC: B81B3/00 ,  G02B26/08

    Abstract: A method is provided for making a microelectromechanical device with high aspect ratio features. First, an insulating layer is deposited on a substrate. Next, a base in the form of a first conducting layer is deposited on the insulating layer and is patterned. A first sacrificial layer is then deposited on the first conducting layer and patterned. A slider in the form of a second conducting layer is then deposited on the first sacrificial layer and patterned. A second sacrificial layer is then deposited on the second conducting layer and patterned. Next, a retainer in the form of a third conducting layer is deposited on the second sacrificial layer and patterned. A mask is then deposited on the third conducting layer and patterned. Next, a reflector in the form of a fourth layer is deposited through the mask onto the third conducting layer. Finally, the mask, first sacrificial layer and second sacrificial layer are removed.

    MEMS OPTICAL SWITCH AND METHOD OF MANUFACTURE
    4.
    发明专利
    MEMS OPTICAL SWITCH AND METHOD OF MANUFACTURE 未知

    公开(公告)号：CA2397238A1

    公开(公告)日：2001-07-19

    申请号：CA2397238

    申请日：2000-11-14

    Applicant: CORNING INC

    Inventor： COUILLARD JAMES G

    IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00 ,  G02B6/35

    Abstract: An optical switch (20) on a planar optical circuit substrate (30) includes a cantilevered arm (40) having a control element (32) selectively movable into a waveguide slot (12) of the substrate for switching optical signals carried b y the waveguide (24). The arm (40) can be actuated by thermal or Piezoelectric actuators to deflect between a rest position allowing a signal to continue along waveguide (24) and a second position with the control element (32) in slot (12) for blocking or changing direction of the signal. A second arm may be provided which moves laterally and is actuated in sequence with cantilevered arm (40) for overlying and latching cantilevered arm (40) in th e second position, thus the switch can remain in an active state without furth er application of control signals. Arrays of MEMS switches formed on a single wafer by etching are bonded to arrays of waveguides to provide multiple swit ch modules.

    SEMICONDUCTOR ON INSULATOR STRUCTURE MADE USING RADIATION ANNEALING
    6.
    发明申请
    SEMICONDUCTOR ON INSULATOR STRUCTURE MADE USING RADIATION ANNEALING 审中-公开
    使用辐射退火制作绝缘体结构的半导体

    公开(公告)号：WO2007142911A2

    公开(公告)日：2007-12-13

    申请号：PCT/US2007012603

    申请日：2007-05-24

    Applicant: CORNING INC ,  COUILLARD JAMES G ,  LEHUEDE PHILIPPE ,  VALLON SOPHIE A

    Inventor： COUILLARD JAMES G ,  LEHUEDE PHILIPPE ,  VALLON SOPHIE A

    IPC: H01L21/762 ,  B23K26/00 ,  H01L21/268 ,  H01L21/324

    CPC classification number: H01L21/268 ,  G02F2202/09 ,  G02F2202/104 ,  H01L21/302 ,  H01L21/324 ,  H01L21/3247 ,  H01L21/67115 ,  H01L21/7624 ,  H01L21/76254

    Abstract: Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.

    Abstract translation: 绝缘体上半导体（SOI）结构的系统和方法和产品，包括使至少一个未完成的表面进行激光退火处理。 SOI结构的制造还可以包括使施主半导体晶片的注入表面进行离子注入工艺以在施主半导体晶片中产生剥离层; 将剥离层的注入表面粘合到绝缘体基板上; 将剥离层与施主半导体晶片分离，从而暴露至少一个切割表面; 以及对所述至少一个切割表面进行激光退火处理。

    SEMICONDUCTOR ON GLASS INSULATOR WITH DEPOSITED BARRIER LAYER
    7.
    发明申请
    SEMICONDUCTOR ON GLASS INSULATOR WITH DEPOSITED BARRIER LAYER 审中-公开
    玻璃绝缘子与沉积障碍层的半导体

    公开(公告)号：WO2007024549A3

    公开(公告)日：2007-09-07

    申请号：PCT/US2006031726

    申请日：2006-08-15

    Applicant: CORNING INC ,  COUILLARD JAMES G ,  GADKAREE KISHOR P

    Inventor： COUILLARD JAMES G ,  GADKAREE KISHOR P

    IPC: H01L21/30

    CPC classification number: H01L21/76254

    Abstract: Methods and apparatus provide for: a silicon on insulator structure, comprising: a glass substrate; a layer of semiconductor material; and a deposited barrier layer of between about 60 nm to about 600 nm disposed between the glass substrate and the semiconductor material, where the glass substrate and semiconductor material are bonded together via electrolysis.

    Abstract translation: 方法和装置提供：绝缘体上硅结构，包括：玻璃基板; 一层半导体材料; 以及布置在玻璃基板和半导体材料之间的约60nm至约600nm之间的沉积阻挡层，其中玻璃基板和半导体材料通过电解结合在一起。

    GLASS-BASED SOI STRUCTURES
    8.
    发明申请
    GLASS-BASED SOI STRUCTURES 审中-公开
    基于玻璃的SOI结构

    公开(公告)号：WO2005029576A2

    公开(公告)日：2005-03-31

    申请号：PCT/US2004004746

    申请日：2004-02-17

    Applicant: CORNING INC ,  COUILLARD JAMES G ,  MACH JOSEPH F ,  GADKAREE KISHOR P

    Inventor： COUILLARD JAMES G ,  MACH JOSEPH F ,  GADKAREE KISHOR P

    IPC: H01L21/20 ,  H01L21/30 ,  H01L21/46 ,  H01L21/762

    CPC classification number: H01L21/76254 ,  H01L21/2007

    Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000°C, a resistivity at 250°C that is less than or equal to 1016 -cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000°C). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions.

    Abstract translation: 提供了包括大面积SOI结构的绝缘体上半导体（SOI）结构，其具有一个或多个由连接到支撑衬底的基本上单晶半导体（例如，掺杂硅）的层（15）组成的区域 20）由氧化物玻璃或氧化物玻璃陶瓷构成。 氧化物玻璃或氧化物玻璃 - 陶瓷优选是透明的，并且优选具有小于1000℃的应变点，250℃下的电阻率小于或等于1016cm，并且包含正离子（例如碱或 碱土离子），其可以响应于在升高的温度（例如，300-1000℃）下的电场而在玻璃或玻璃陶瓷内移动。 半导体层（15）和支撑衬底（20）之间的结合强度优选为至少8焦耳/米2。 半导体层（15）可以包括混合区域（16），其中半导体材料已经与源自玻璃或玻璃陶瓷的氧离子反应。 支撑衬底（20）优选地包括具有降低的可移动正离子浓度的耗尽区（23）。

    VARIABLE PENETRATION DEPTH BIOSENSOR AND METHODS
    10.
    发明申请
    VARIABLE PENETRATION DEPTH BIOSENSOR AND METHODS 审中-公开
    可变渗透深度生物传感器和方法

    公开(公告)号：WO2011066097A9

    公开(公告)日：2011-08-04

    申请号：PCT/US2010055950

    申请日：2010-11-09

    Applicant: CORNING INC ,  COUILLARD JAMES G ,  FONTAINE NORMAN H ,  LAHIRI JOYDEEP ,  LI GUANGSHAN ,  LIU ANPING ,  PENG JINLIN ,  WALTON DONNELL T

    Inventor： COUILLARD JAMES G ,  FONTAINE NORMAN H ,  LAHIRI JOYDEEP ,  LI GUANGSHAN ,  LIU ANPING ,  PENG JINLIN ,  WALTON DONNELL T

    IPC: G02B6/00

    CPC classification number: G01N21/553

    Abstract: A surface plasmon resonance sensor system including a high refractive index prism, a sensor chip, a light source having multiple wavelengths over a broad range of wavelengths, optical lenses, a photodetector, a data acquisition unit, and as defined herein. The sensor chip can include, for example, a thin layer of silicon and gold on one face of a transparent substrate and the prism adjacent to the opposite face of the transparent substrate. Such an arrangement provides variable penetration depths up to about 1.5 micrometers with a dynamic range for sensing index of refraction changes in a sample that are several times greater than that of a conventional SPR sensor. The disclosure provides methods for using the surface plasmon resonance sensor system for cell assay or chemical assay related applications.

    Abstract translation: 一种表面等离子体共振传感器系统，包括高折射率棱镜，传感器芯片，在宽波长范围内具有多个波长的光源，光学透镜，光电检测器，数据采集单元，如本文所定义。 传感器芯片例如可以包括在透明基板的一个面上的硅和金的薄层和邻近透明基板的相对面的棱镜。 这种布置提供高达约1.5微米的可变穿透深度，具有用于感测样品中的折射改变的动态范围，其比常规SPR传感器的折射数倍大几倍。 本公开提供了使用表面等离子体共振传感器系统用于细胞测定或化学测定相关应用的方法。

Patent Agency Ranking