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公开(公告)号：AU2005316460A1
公开(公告)日：2006-06-22
申请号：AU2005316460
申请日：2005-12-15
Applicant: CORNING INC
Inventor： ZAH CHUNG-EN , SAUER MICHAEL , NISHIYAMA NOBUHIKO
Abstract: Both a system and method for optically powering a network component, such as the transponder of a picocell, is provided. The system includes a vertical cavity surface emitting laser (VCSEL) for processing an input signal, a remotely-located optical power source, and an optical fiber for conducting optical power from the source to the VCSEL. The VCSEL may be electrically biased from current generated by an optical-electro converter coupled to the fiber, or directly optically biased from light from the optical power source. A bias tee is connected between an input signal and an input of the VCSEL such that the VCSEL generates a modulated optical signal. The system may be the transponder of a picocell system where the VCSEL generates an optical uplink signal conducted to a head-end circuit via the same or a separate optical fiber.
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公开(公告)号：DE60026991T2
公开(公告)日：2006-12-21
申请号：DE60026991
申请日：2000-05-16
Applicant: CORNING INC
Inventor： ZAH CHUNG-EN
Abstract: A buried ridge semiconductor diode laser, preferably based on the GaAs and AlGaAs family of materials. The thin upper cladding layer is overlaid with an aluminum-free etch stop layer and an aluminum-free confinement layer, preferably of GaInP, of opposite conductivity type opposite that of the upper cladding layer. A trench is formed in the confinement layer extending down to the etch stop layer. Additional AlGaAs is regrown in the aperture to form a buried ridge. During the regrowth, no aluminum is exposed either at the bottom or on the sides of the aperture. The confinement layer is preferably lattice matched to the AlGaAs. The thin etch stop layer preferably has the same conductivity type and the same bandgap as the AlGaAs sandwiching it. For lasers producing shorter wavelength radiation, the aluminum content of the AlGaAs cladding layers is increased and some aluminum is added to the confinement layer but less than that of the cladding layers.
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公开(公告)号：CA2381166A1
公开(公告)日：2001-03-08
申请号：CA2381166
申请日：2000-07-11
Applicant: CORNING INC
Inventor： ZAH CHUNG-EN
IPC: H01S5/22 , G02B6/34 , H01S3/08 , H01S3/23 , H01S5/026 , H01S5/12 , H01S5/125 , H01S5/40 , H01S3/10 , G02B6/12
Abstract: A multiwavelength laser includes a phasar portion (2) for providing waveleng th accuracy and a DBR portion (14) coupled to the phasar portion (2) for formin g a laser cavity (142) with the phasar portion (2).
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公开(公告)号：CA2381046A1
公开(公告)日：2001-03-08
申请号：CA2381046
申请日：2000-07-11
Applicant: CORNING INC
Inventor： ZAH CHUNG-EN
Abstract: An optical transmitter providing the benefits of both filter-locked and wavelength-locked lasers is disclosed by modifying an external cavity (32) f or the integration of an optical modulator (14). The external cavity (32) provides a round-trip path for light travel. A substrate (24) is connected t o the external cavity (32) where at least one gain element (16) and the optica l modulator (14) are integral with the substrate (24). A partial reflector (40 ) is also integral with the substrate (24) and couples the at least one gain element (16) with the optical modulator (14).
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公开(公告)号：MXPA01012893A
公开(公告)日：2002-07-30
申请号：MXPA01012893
申请日：2000-05-16
Applicant: CORNING INC
Inventor： ZAH CHUNG-EN
Abstract: Un laser diodico semiconductor de reborde oculto, preferiblemente a base de la familia de materiales de GaAs y AlGaAs; la delgada capa de revestimiento superior esta sobrepuesta con una capa de reten grabada libre de aluminio y una capa de confinamiento libre de aluminio, de preferencia de GalnP, de tipo de conductividad opuesto contrario a la de la capa de revestimiento superior; una zanja esta formada en la capa de confinamiento que se extiende hacia abajo hacia la capa de reten grabada; AlGaAs adicional vuelve a crecer en la abertura para formar un reborde oculto; durante el rebrote, no se expone aluminio en la parte inferior ni en los lados de la abertura; la capa de confinamiento, de preferencia coincide el reticulo con el AlGaAs; la delgada capa de reten grabada preferiblemente tiene el mismo tipo de conductividad y el mismo espacio de banda que el AlGaAs que la intercala; para laseres que producen radiacion de longitud de onda mas corta, el contenido de aluminio de las capas de revestimiento de AlGaAs se incrementa y se anade algo de aluminio a la capa de confinamiento pero en menor cantidad que a las capas de revestimiento.
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Patent Agency Ranking
公开(公告)号：AU5928500A
公开(公告)日：2001-03-26
申请号：AU5928500
申请日：2000-07-11
Applicant: CORNING INC
Inventor： ZAH CHUNG-EN
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公开(公告)号：CA2376885A1
公开(公告)日：2000-12-21
申请号：CA2376885
申请日：2000-05-16
Applicant: CORNING INC
Inventor： ZAH CHUNG-EN
Abstract: A buried ridge semiconductor diode laser, preferably based on the GaAs and AlGaAs family of materials. The thin upper cladding layer is overlaid with a n aluminum-free etch stop layer and an aluminum-free confinement layer, preferably of GaInP, of opposite conductivity type opposite that of the uppe r cladding layer. A trench is formed in the confinement layer extending down t o the etch stop layer. Additional AlGaAs is regrown in the aperture to form a buried ridge. During the regrowth, no aluminum is exposed either at the bott om or on the sides of the aperture. The confinement layer is preferably lattice matched to the AlGaAs. The thin etch stop layer preferably has the same conductivity type and the same bandgas as the AlGaAs sandwiching it. For lasers producing shorter wavelength radiation, the aluminum content of the AlGaAs cladding layers is increased and some aluminum is added to the confinement layer but less than that of the cladding layers.
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公开(公告)号：AT515818T
公开(公告)日：2011-07-15
申请号：AT08754307
申请日：2008-05-08
Applicant: CORNING INC
Inventor： GOLLIER JACQUES , HU MARTIN H , MIXON STEPHEN R , PIKULA DRAGAN , RICKETTS DANIEL O , ZAH CHUNG-EN
IPC: H01S5/0687 , H01S5/06 , H01S5/0683
Abstract: According to one embodiment of the present invention, a programmable light source comprises one or more semiconductor lasers, a wavelength conversion device, and a laser controller. The controller is programmed to operate the semiconductor laser using a modulated feedback control signal. The wavelength control signal is adjusted based on the results of a comparison of a detected intensity signal with a feedback signal to align the lasing wavelength with the conversion efficiency peak of the wavelength conversion device. Laser controllers and projections systems operating according to the control concepts of the present invention are also provided.
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公开(公告)号：AU2005284763A1
公开(公告)日：2006-03-23
申请号：AU2005284763
申请日：2005-09-16
Applicant: CORNING INC
Inventor： CANEAU CATHERINE G , NISHIYAMA NOBUHIKO , ZAH CHUNG-EN , HALL BENJAMIN L
Abstract: A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature in degrees Centigrade, and fabricating at least half of the high index layers of the distributed Bragg reflector (DBR) of the VCSEL from AlGaInAs or other material that can be epitaxially grown on the InP substrate to have a band gap equal to or greater than the sum of the photon energy (in milli-electron volts) plus the sum of the maximum operating temperature plus 110 divided by 1.96. The manufacture of the high index layers with such a band gap creates a sufficient difference in the indices of refraction of the alternating layers in the DBR, while keeping optical absorption low to maintain the reflectivity at least up to the desired maximum temperature, and obviates the need for using a DBR either bonded to the InP substrate, or grown metamorphically on it.
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公开(公告)号：AU2004310422A1
公开(公告)日：2005-05-26
申请号：AU2004310422
申请日：2004-11-08
Applicant: CORNING INC
Inventor： WALTON DONNELL T , ZAH CHUNG-EN , LIU XINGSHENG , HUGUES LAWRENCE C JR , ZENTENO LUIS A
IPC: H01S3/067 , H01S3/094 , H01S3/0941
Abstract: An optically active fiber ( 30 ) is disclosed for making a fiber laser ( 18 ) or an amplifier ( 16 ) for optically pumping by a broad area laser diode for operation in the 1.5 micron band. This double-clad structured active fiber ( 30 ) has a core ( 34 ), doped with an optically excitable erbium ion having a quasi-three-level transition. The core ( 3 ) has a core refractive index and a core cross-sectional area. An inner cladding ( 32 ) surrounds the core ( 34 ). The inner cladding ( 32 ) has an inner cladding refractive index less than the core refractive index, an inner cladding cross-sectional area between 2 and 25 times greater than that of the core cross-sectional area, and an aspect ratio greater than 1.5:1. An outer cladding ( 36 ) surrounds the inner cladding ( 32 ) and has an outer cladding refractive index less than the inner cladding refractive index.
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