3.
    发明专利
    未知

    公开(公告)号:DE745837T1

    公开(公告)日:1999-05-20

    申请号:DE96108754

    申请日:1996-05-31

    Abstract: A train of transform-limited optical pulses with wavelength close to the zero-dispersion wavelength of the fibre (2) and high and variable peak power, such as to give rise to self-phase modulation, is sent into a fibre (2); the spectral broadening of the signal exiting the fibre (2) is measured for a number of values of the peak power of the pulses and the nonlinear refractive index is obtained from the angular coefficient of the straight line representing spectral broadening versus peak power. The device for carrying out the method is also provided.

    9.
    发明专利
    未知

    公开(公告)号:DE68908013T2

    公开(公告)日:1994-01-05

    申请号:DE68908013

    申请日:1989-05-23

    Abstract: The characteristic parameters of a semiconductor laser (1) acting as an amplifier and brought to bistable operating conditions are determined. To this aim the output power (I2) of laser (1) is measured as a function of the power (I1) of an amplitude-modulated optical input signal to determine the laser hysteresis loop; the switching points (P1, P2) between the two stable states of the laser (1) are identified, the input and output power values [I2(P1), I1(P1), I2(P2), I1(P2)] relevant to such points are memorized, and at least the value of the non-linear refractive index coefficient (n2) of the material used to fabricate the laser (1) is determined starting from the power values relevant to at least one of said points (P1, P2). By exploiting the power values relevant to both switching points (P1, P2) also the amplification factor (A), the finesse parameter (F) of the passive cavity of the laser (1) and the wavelength difference ( lambda 1- lambda 2) between the laser under test (1) and a second laser (3) generating the optical signal causing the laser under test (1) to operate under bistable conditions are measured.

    10.
    发明专利
    未知

    公开(公告)号:DE68908013D1

    公开(公告)日:1993-09-09

    申请号:DE68908013

    申请日:1989-05-23

    Abstract: The characteristic parameters of a semiconductor laser (1) acting as an amplifier and brought to bistable operating conditions are determined. To this aim the output power (I2) of laser (1) is measured as a function of the power (I1) of an amplitude-modulated optical input signal to determine the laser hysteresis loop; the switching points (P1, P2) between the two stable states of the laser (1) are identified, the input and output power values [I2(P1), I1(P1), I2(P2), I1(P2)] relevant to such points are memorized, and at least the value of the non-linear refractive index coefficient (n2) of the material used to fabricate the laser (1) is determined starting from the power values relevant to at least one of said points (P1, P2). By exploiting the power values relevant to both switching points (P1, P2) also the amplification factor (A), the finesse parameter (F) of the passive cavity of the laser (1) and the wavelength difference ( lambda 1- lambda 2) between the laser under test (1) and a second laser (3) generating the optical signal causing the laser under test (1) to operate under bistable conditions are measured.

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