公开(公告)号：JPH02239222A

公开(公告)日：1990-09-21

申请号：JP1077790

申请日：1990-01-22

Applicant: CSELT CENTRO STUDI LAB TELECOM

Inventor： DOMENIKO KANPI

IPC: G02F1/015 ,  G02F1/017 ,  G02F1/19 ,  H01L31/0352

Abstract: PURPOSE: To shift the absorption threshold of rays for irradiation to a short wavelength side when an electric field is applied by providing the layers in a structural body composed of specific layers with hole parts to allow the passage of the optical axis cast in a perpendicular direction. CONSTITUTION: The structural body is composed of a metallic layer 1 which is used as a connecting member at the time of connecting the structural body to lead wires for impression of control potential, a (p) type semiconductor layer 2, an intrinsic semiconductor layer 3, a layer 4 which constitutes a first QW, an intrinsic barrier layer 5, a second layer 6 which constitute a second QW, one or more cumulative layers which consist of intrinsic semiconductor layers 7, an (n) type semiconductor layer 8, an (n) type semiconductor layer 9 which covers a base layer 10 to be described afterward, the base layer 10 and a metallic layer 11 which is used as a connecting member at the time of connecting the second lead wires for impression of control potential to the structural body. The metallic layers 1, 11, the base layer coating layer 9 and the base layer 10 themselves have the hole parts to allow the passage of the rays cast in the direction perpendicular to the layers in the structural body. As a result, the absorption threshold of the rays for irradiation shift to the short wavelength side when the electric field is applied.