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    METHOD FOR ETCHING SURFACE OF QUARTZ GLASS TO MANUFACTURE PHASE MASK OR THE LIKE
    1.
    发明专利
    METHOD FOR ETCHING SURFACE OF QUARTZ GLASS TO MANUFACTURE PHASE MASK OR THE LIKE 失效

    公开(公告)号：JP2000155406A

    公开(公告)日：2000-06-06

    申请号：JP24865399

    申请日：1999-09-02

    Applicant: CSELT CENTRO STUDI LAB TELECOM

    Inventor： ARDITO MARCO ,  MENEGHINI GIANCARLO

    IPC: H01L21/306 ,  C03C15/00 ,  G02B5/18 ,  G03F1/00 ,  G03F1/08

    Abstract: PROBLEM TO BE SOLVED: To etch the surface of quartz glass with good precision. SOLUTION: A layer 2 of an electrically conductive material is deposited on a quartz glass substrate 1 with a surface to be etched. A pattern that copies an etching pattern to be formed on the surface of the substrate 1 is formed on the electrically conductive material layer 2 by depositing a resist 3 on the layer 2 and exposing and developing the resist 3 to disclose a region of the layer 2 corresponding to the region of the substrate 1 to be etched. A material such as titanium is selected as the electrically conductive material and it is etched with the same etching medium as that used for etching the substrate 1, e.g. CHF3. The removal of the electrically conductive layer 2 and the etching of the substrate 1 in the region not convered with the resist are then carried out in a single step.

    A METHOD OF SURFACE ETCHING SILICA GLASS, FOR INSTANCE FOR FABRICATING PHASE MASKS
    2.
    发明专利
    A METHOD OF SURFACE ETCHING SILICA GLASS, FOR INSTANCE FOR FABRICATING PHASE MASKS 未知

    公开(公告)号：CA2281291A1

    公开(公告)日：2000-03-04

    申请号：CA2281291

    申请日：1999-09-02

    Applicant: CSELT CENTRO STUDI LAB TELECOM

    Inventor： ARDITO MARCO ,  MENEGHINI GIANCARLO

    IPC: H01L21/306 ,  C03C15/00 ,  G02B5/18 ,  G03F1/00

    Abstract: A method of surface etching silica glass. The method comprises depositing a layer of electrically conductive material on a silica glass substrate with a surface to be etched. A pattern reproducing the etching pattern to be fabricated on the substrate surface is formed on such conductive material through deposition, exposure and development of a resist, by leaving uncovered the areas of said conductive material layer corresponding to the areas of the substrate to be etched. As a conductive material, a material such as titanium is chosen, which can be etched by the same etching medium, such as CHF3, used for etching the substrate. The removal of said conductive material layer and the etching of the substrate in the areas left uncovered by the resist are then performed in a single step.

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