公开(公告)号：JP2010147292A

公开(公告)日：2010-07-01

申请号：JP2008323728

申请日：2008-12-19

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： KOMUTSU YASUSUKE ,  OKADA OSAMU ,  KUWABARA OSAMU ,  SHIODA JUNJI ,  FUJII NOBUMITSU

IPC: H01L23/12

CPC classification number: H01L2224/11

Abstract: PROBLEM TO BE SOLVED: To prevent a resin protective film from being easily warped entirely in curing when forming the resin protective film for protecting bottom and side faces of a silicon substrate. SOLUTION: First, a groove 28 is formed in a semiconductor wafer 21, a sealing film 12, and the like at a dicing street 22 and parts corresponding to both the sides of the dicing street 22. In this state, the semiconductor wafer 21 is separated into individual silicon substrates 1 by the formation of the groove 28. Then, a resin protective film 11 is formed on the bottom face of the respective silicon substrates 1 including the inside of the groove 28. In this case, although the semiconductor wafer 21 is separated into the individual silicon substrates 1, a first support plate 24 is stuck to an upper surface of a columnar electrode 10 and the sealing film 12 via a first adhesive layer 23, thus preventing an entire part including the individually separated silicon substrates 1 from being warped easily when forming the resin protective film 11. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了防止树脂保护膜在形成用于保护硅衬底的底部和侧面的树脂保护膜时在固化中容易翘曲。 解决方案：首先，在切割街道22处的半导体晶片21，密封膜12等中形成凹槽28，并且与切割街22的两侧对应的部分形成凹槽28.在该状态下，半导体 通过形成槽28将晶片21分离成单独的硅基板1.然后，在包括槽28的内部的各硅衬底1的底面上形成树脂保护膜11.在这种情况下，虽然 将半导体晶片21分离为单独的硅基板1，第一支撑板24经由第一粘合层23粘贴在柱状电极10的上表面和密封膜12上，从而防止包括单独分离的硅的整个部分 当形成树脂保护膜11时，基材1容易翘曲。版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010283367A

公开(公告)日：2010-12-16

申请号：JP2010166433

申请日：2010-07-23

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： KOMUTSU YASUSUKE ,  WAKABAYASHI TAKESHI ,  OKADA OSAMU ,  KUWABARA OSAMU ,  SHIODA JUNJI ,  FUJII NOBUMITSU

IPC: H01L21/301 ,  H01L21/304 ,  H01L21/768 ,  H01L23/12 ,  H01L23/522

CPC classification number: H01L24/96 ,  H01L2224/13 ,  H01L2224/94 ,  H01L2924/01019 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/03

Abstract: PROBLEM TO BE SOLVED: To make a low-dielectric constant film hardly separate, in a semiconductor device provided with a low-dielectric constant film wire-layered structure part comprising layered structure of a silicon substrate, the low-dielectric constant film provided on the silicon substrate, and a wire. SOLUTION: The low-dielectric constant film wire-layered structure part 3 comprising the layered structure of the low-dielectric constant film 4 and the wire 5 is provided in an area excepting the periphery part of an upper face of the silicon substrate 1. A circumferential side face of the low-dielectric constant film wire-layered structure part 3 is coated by a sealing film 15. The low-dielectric constant film is formed thereby into a structure hardly separated. An under layer protection film 18 is provided therein, on a lower face of the silicon substrate 1, to protect the lower face from a crack or the like. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题为了使低介电常数膜几乎不分离，在设置有包括硅衬底的层状结构的低介电常数膜线层状结构部分的半导体器件中，低介电常数膜 设置在硅基板上，以及导线。 解决方案：包括低介电常数膜4和线5的层状结构的低介电常数膜线层结构部分3设置在除了硅衬底的上表面的周边部分之外的区域中 低介电常数薄膜线层状结构体3的周向侧面被密封膜15覆盖。低介电常数膜形成为几乎不分离的结构。 在硅基板1的下表面上设置有底层保护膜18，以保护下表面免受裂纹等的影响。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010147358A

公开(公告)日：2010-07-01

申请号：JP2008324914

申请日：2008-12-22

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： SHIODA JUNJI ,  KOMUTSU YASUSUKE ,  FUJII NOBUMITSU ,  KIZAKI MASAYASU ,  MASUDA TAKASHI ,  KUWABARA OSAMU ,  OKADA OSAMU

IPC: H01L23/12

CPC classification number: H01L2224/11

Abstract: PROBLEM TO BE SOLVED: To prevent a resin protective film from being easily warped entirely in curing when forming the resin protective film for protecting bottom and side faces of a silicon substrate. SOLUTION: First, a first groove 27 is formed in a semiconductor wafer 21, a sealing film 12, and the like at a dicing street 22 and parts corresponding to both the sides of the dicing street 22. In this state, the semiconductor wafer 21 is separated into individual silicon substrates 1 by the formation of the groove 27. Then, a resin protective film 11 is formed on bottom faces of the respective silicon substrates 1 including the inside of the first groove 27. In this case, although the semiconductor wafer 21 is separated into the individual silicon substrates 1, a support plate 24 is stuck to upper surfaces of a columnar electrode 10 and the sealing film 12 via an adhesive layer 23, thus preventing an entire part including the individually separated silicon substrates 1 from being warped easily when forming the resin protective film 11. COPYRIGHT: (C)2010,JPO&INPIT

公开(公告)号：JP2010147356A

公开(公告)日：2010-07-01

申请号：JP2008324912

申请日：2008-12-22

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： SHIODA JUNJI ,  KOMUTSU YASUSUKE ,  FUJII NOBUMITSU ,  KIZAKI MASAYASU ,  MASUDA TAKASHI ,  KUWABARA OSAMU ,  OKADA OSAMU

IPC: H01L23/12

CPC classification number: H01L2224/11

Abstract: PROBLEM TO BE SOLVED: To prevent a resin protective film from being easily warped entirely in curing when forming the resin protective film for protecting bottom and side faces of a silicon substrate. SOLUTION: First, a first groove 27 is formed in a semiconductor wafer 21, a sealing film 12, and the like at a dicing street 22 and parts corresponding to both the sides of the dicing street 22. In this state, the semiconductor wafer 21 is separated into individual silicon substrates 1 by the formation of the groove 27. Then, a resin protective film 11 is formed on bottom faces of the respective silicon substrates 1 including the inside of the first groove 27. In this case, although the semiconductor wafer 21 is separated into the individual silicon substrates 1, a support plate 24 is stuck to upper surfaces of a columnar electrode 10 and the sealing film 12 via an adhesive layer 23, thus preventing an entire part including the individually separated silicon substrates 1 from being warped easily when forming the resin protective film 11. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了防止树脂保护膜在形成用于保护硅衬底的底部和侧面的树脂保护膜时在固化中容易翘曲。 解决方案：首先，在切割街道22的半导体晶片21，密封膜12等中形成第一凹槽27，并且与切割街22的两侧相对应的部分形成。在该状态下， 通过形成槽27将半导体晶片21分离成单独的硅基板1.然后，在包括第一凹槽27的内部的各个硅基板1的底面上形成树脂保护膜11.在这种情况下，尽管 将半导体晶片21分离成单独的硅基板1，经由粘合剂层23将支撑板24粘贴在柱状电极10和密封膜12的上表面，从而防止包含单独分离的硅基板1的整个部分 在形成树脂保护膜11时容易弯曲。（C）2010年，JPO＆INPIT

公开(公告)号：JP2010140987A

公开(公告)日：2010-06-24

申请号：JP2008314022

申请日：2008-12-10

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： KOMUTSU YASUSUKE ,  OKADA OSAMU ,  KUWABARA OSAMU ,  SHIODA JUNJI ,  FUJII NOBUMITSU

IPC: H01L23/12

CPC classification number: H01L21/6836 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3135 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/94 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/16 ,  H01L2224/18 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/03

Abstract: PROBLEM TO BE SOLVED: To prevent an entire resin protective film from being warped easily when curing the resin protective film when forming the resin protective film for protecting the bottom and sides of a silicon substrate. SOLUTION: First, a trench 28 is formed in a semiconductor wafer 21, a sealing film 12, and the like in a dicing street 22 and parts corresponding to both the sides of the dicing street 22. In this state, the semiconductor wafer 21 is separated into respective silicon substrates 1 by the formation of the trench 28. Then, the resin protective film 11 is formed on a bottom of the respective silicon substrates 1 including the inner part of the trench 28. In this case, the semiconductor wafer 21 is separated into the respective silicon substrates 1. However, a support plate 24 is affixed to upper surfaces of a columnar electrode 10 and the sealing film 12 via an adhesive layer 23. Accordingly, when the resin protective film 11 is formed, it is possible to prevent the entire resin protective film 11 including the separated silicon substrates 1 from being warped easily. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了防止在形成用于保护硅衬底的底部和侧面的树脂保护膜时固化树脂保护膜时容易使整个树脂保护膜翘曲。 解决方案：首先，在切割街道22中的半导体晶片21，密封膜12等中形成沟槽28，并且与切割街22的两侧对应的部分形成沟槽28.在该状态下，半导体 通过形成沟槽28将晶片21分离成各自的硅衬底1.然后，在包括沟槽28的内部的各个硅衬底1的底部上形成树脂保护膜11.在这种情况下，半导体 将晶片21分离成各自的硅基板1.然而，支撑板24通过粘合层23固定在柱状电极10和密封膜12的上表面。因此，当形成树脂保护膜11时 可以防止包含分离的硅基板1的整个树脂保护膜11容易翘曲。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010140948A

公开(公告)日：2010-06-24

申请号：JP2008313208

申请日：2008-12-09

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： KOMUTSU YASUSUKE ,  OKADA OSAMU ,  KUWABARA OSAMU ,  SHIODA JUNJI ,  FUJII NOBUMITSU

IPC: H01L23/12

CPC classification number: H01L21/561 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/525 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05569 ,  H01L2224/16 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To prevent an entire resin protective film from being warped easily, when curing the resin protective film, in forming the resin protective film for protecting the bottom and sides of a silicon substrate. SOLUTION: First, a trench 28 is formed in a semiconductor wafer 21, a sealing film 12, and the like in a dicing street 22 and parts corresponding to both the sides of the dicing street 22. In this state, the semiconductor wafer 21 is separated into respective silicon substrates 1 by the formation of the trench 28. Then, the resin protective film 11 is formed on a bottom of the respective silicon substrates 1 including the inner part of the trench 28. In this case, the semiconductor wafer 21 is separated into the respective silicon substrates 1. However, a support plate 25 is affixed to upper surfaces of a columnar electrode 10 and the sealing film 12 via an adhesive layer 23, or the like. Accordingly, when the resin protective film 11 is formed, it is possible to prevent the entire resin protective film 11 including the separated silicon substrates 1 from being warped easily. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题为了防止整个树脂保护膜翘曲变形，在树脂保护膜固化时，形成用于保护硅衬底的底部和侧面的树脂保护膜。 解决方案：首先，在切割街道22中的半导体晶片21，密封膜12等中形成沟槽28，并且与切割街22的两侧对应的部分形成沟槽28.在该状态下，半导体 通过形成沟槽28将晶片21分离成各自的硅衬底1.然后，在包括沟槽28的内部的各个硅衬底1的底部上形成树脂保护膜11.在这种情况下，半导体 晶片21被分离成各自的硅基板1.然而，支撑板25通过粘合剂层23等固定在柱状电极10和密封膜12的上表面上。 因此，当形成树脂保护膜11时，可以防止包含分离的硅衬底1的整个树脂保护膜11变得容易翘曲。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010238901A

公开(公告)日：2010-10-21

申请号：JP2009084999

申请日：2009-03-31

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： KUWABARA OSAMU

IPC: H01L23/12 ,  H01L21/3205 ,  H01L23/52

CPC classification number: H01L2224/11

Abstract: PROBLEM TO BE SOLVED: To provide a silicon substrate having a thickness thinner than before when manufacturing a semiconductor device having a structure which covers the side surface of the silicon substrate with a sealing film and covers the lower surface of the substrate with a lower layer protection film. SOLUTION: A semiconductor wafer 21 except for its periphery is thinned by steps of: forming the sealing film 11 on the wafer 21, and forming a recessed portion 31 in the wafer by grinding its bottom surface side except for its periphery using a rotational grinding stone 30. In this case, the presence of the sealing film 11 and the removal of the periphery of the wafer 21 enable the semiconductor wafer 21 to hardly be broken even if the wafer 21 is thinned than before, that is, enable the thickness of the silicon substrate 1 to be thinner than before. For example, the thickness of the silicon substrate 1 can significantly be thinned to be 20 to 30 μm. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种具有比以前更薄的厚度的硅衬底，当制造具有用密封膜覆盖硅衬底的侧表面的结构的半导体器件并且用基片覆盖衬底的下表面 下层保护膜。 解决方案：除了其外围的半导体晶片21之外，通过以下步骤减薄半导体晶片21：在晶片21上形成密封膜11，并且通过使用 旋转研磨石30.在这种情况下，即使晶片21比以前变薄，密封膜11的存在和晶片21的周边的移除也能够使得半导体晶片21几乎不会破裂，即， 硅衬底1的厚度要比以前薄。 例如，硅基板1的厚度可以明显变薄为20〜30μm。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010147355A

公开(公告)日：2010-07-01

申请号：JP2008324909

申请日：2008-12-22

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： SHIODA JUNJI ,  KOMUTSU YASUSUKE ,  FUJII NOBUMITSU ,  KUWABARA OSAMU ,  OKADA OSAMU ,  KIZAKI MASAYASU ,  MASUDA TAKASHI

IPC: H01L23/12

CPC classification number: H01L2224/11

Abstract: PROBLEM TO BE SOLVED: To prevent a resin protective film from being easily warped entirely in curing when forming the resin protective film for protecting bottom and side faces of a silicon substrate. SOLUTION: First, a first groove 28 is formed in a semiconductor wafer 21, a sealing film 12, and the like at a dicing street 22 and parts corresponding to both the sides of the dicing street 22. In this state, the semiconductor wafer 21 is separated into individual silicon substrates 1 by the formation of the first groove 28. Then, a resin protective film 11 is formed on the bottom face of the respective silicon substrates 1 including the inside of the first groove 28. In this case, although the semiconductor wafer 21 is separated into the individual silicon substrates 1, a first support plate 24 is stuck to an upper surface of a columnar electrode 10 and the sealing film 12 via a first adhesive layer 23, thus preventing an entire part including the individually separated silicon substrates 1 from being warped easily when forming the resin protective film 11. COPYRIGHT: (C)2010,JPO&INPIT

公开(公告)号：JP2010147354A

公开(公告)日：2010-07-01

申请号：JP2008324905

申请日：2008-12-22

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： SHIODA JUNJI ,  KOMUTSU YASUSUKE ,  FUJII NOBUMITSU ,  KUWABARA OSAMU ,  OKADA OSAMU ,  KIZAKI MASAYASU ,  MASUDA TAKASHI

IPC: H01L23/12

CPC classification number: H01L2224/11

Abstract: PROBLEM TO BE SOLVED: To prevent a resin protective film from being easily warped entirely in curing when forming the resin protective film for protecting bottom and side faces of a silicon substrate. SOLUTION: First, a first groove 28 is formed in a semiconductor wafer 21, a sealing film 12, and the like at a dicing street 22 and parts corresponding to both the sides of the dicing street 22. In this state, the semiconductor wafer 21 is separated into individual silicon substrates 1 by the formation of the first groove 28. Then, a resin protective film 11 is formed on the bottom face of the respective silicon substrates 1 including the inside of the first groove 28. In this case, although the semiconductor wafer 21 is separated into the individual silicon substrates 1, a first support plate 24 is stuck to an upper surface of a columnar electrode 10 and the sealing film 12 via a first adhesive layer 23, thus preventing an entire part including the individually separated silicon substrates 1 from being warped easily when forming the resin protective film 11. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了防止树脂保护膜在形成用于保护硅衬底的底部和侧面的树脂保护膜时在固化中容易翘曲。 解决方案：首先，在切割街道22的半导体晶片21，密封膜12等中形成有第一槽28以及与切割街22的两侧对应的部分。在该状态下， 通过形成第一槽28将半导体晶片21分离为单独的硅基板1.然后，在包括第一槽28的内部的各硅衬底1的底面上形成树脂保护膜11.在这种情况下 虽然将半导体晶片21分离为单独的硅基板1，但是第一支撑板24经由第一粘合层23粘贴在柱状电极10的上表面和密封膜12上，从而防止了包括 单独分离的硅衬底1在形成树脂保护膜11时容易弯曲。版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010147293A

公开(公告)日：2010-07-01

申请号：JP2008323774

申请日：2008-12-19

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： KOMUTSU YASUSUKE ,  OKADA OSAMU ,  KUWABARA OSAMU ,  SHIODA JUNJI ,  FUJII NOBUMITSU

IPC: H01L23/12

CPC classification number: H01L2224/11

Abstract: PROBLEM TO BE SOLVED: To prevent a resin protective film from being easily warped entirely in curing when forming the resin protective film for protecting bottom and side faces of a silicon substrate. SOLUTION: First, a groove 28 is formed in a semiconductor wafer 21, a sealing film 12, and the like at a dicing street 22 and parts corresponding to both the sides of the dicing street 22. In this state, the semiconductor wafer 21 is separated into individual silicon substrates 1 by the formation of the groove 28. Then, a resin protective film 11 is formed on the bottom face of the respective silicon substrates 1 including the inside of the groove 28. In this case, although the semiconductor wafer 21 is separated into the individual silicon substrates 1, a first support plate 25 is stuck to an upper surface of a columnar electrode 10 and the sealing film 12 via a first adhesive layer 23, or the like thus preventing an entire part including the individually separated silicon substrates 1 from being warped easily when forming the resin protective film 11. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了防止树脂保护膜在形成用于保护硅衬底的底部和侧面的树脂保护膜时在固化中容易翘曲。 解决方案：首先，在切割街道22处的半导体晶片21，密封膜12等中形成凹槽28，并且与切割街22的两侧对应的部分形成凹槽28.在该状态下，半导体 通过形成槽28将晶片21分离成单独的硅基板1.然后，在包括槽28的内部的各硅衬底1的底面上形成树脂保护膜11.在这种情况下，虽然 将半导体晶片21分离为单独的硅基板1，第一支撑板25经由第一粘合层23等粘合到柱状电极10的上表面和密封膜12上，从而防止包括 单独分离的硅衬底1在形成树脂保护膜11时容易弯曲。版权所有（C）2010，JPO＆INPIT