公开(公告)号：WO2004049369A2

公开(公告)日：2004-06-10

申请号：PCT/US2003/026314

申请日：2003-08-20

Applicant: CDREAM DISPLAY CORPORATION

Inventor： KANG, Simon ,  BAE, Craig ,  KIM, Jung, Jao

IPC: H01J

CPC classification number: B82Y30/00 ,  C23C16/0281 ,  C23C16/26

Abstract: An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 200 °C to 600 °C compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges.

Abstract translation: 电子发射器件包含一个垂直发射极电极，一方面图案化为位于电子发射元件之间的多个横向分离的部分，另一方面包含衬底。 包含碳纳米管的电子发射元件在200℃至600℃的温度范围下生长，与下面的衬底的热应力相容。 电子发射元件在颗粒化的催化剂层上生长，该颗粒化的催化剂层在如此低的温度范围下提供大的表面积用于生长电子发射元件。

公开(公告)号：WO2004048257A2

公开(公告)日：2004-06-10

申请号：PCT/US2003/037352

申请日：2003-11-21

Applicant: CDREAM DISPLAY CORPORATION

Inventor： KANG, Sung, Gu ,  BAE, Craig

IPC: C01B

CPC classification number: C30B25/105 ,  B82Y30/00 ,  C30B29/605 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/845

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. - After the nanotubes have been grown, a purification step Is performed on the newly formed nanotube structures. The purification removes graphite -and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma 'at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition Is used as the plasma source gas. Because the source gas for the purification plasma Is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which Is sustained In the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas. Accordingly, the growth and the purification may be performed without shutting off the plasma in the plasma process chamber.

Abstract translation: 使用等离子体化学沉积工艺在基板的表面上形成碳纳米管。 在纳米管生长之后，对新形成的纳米管结构进行纯化步骤。 净化从生长的纳米管的壁上去除石墨和其他碳颗粒，并控制纳米管层的厚度。 在相同基板温度下用等离子体进行纯化。 为了进行纯化，使用作为等离子体化学沉积用原料气体的添加剂添加的含氢气体作为等离子体源气体。 因为用于纯化等离子体的源气体作为添加剂添加到用于化学等离子体沉积的源气体中，所以生长的碳纳米管通过与在等离子体处理室中维持的连续等离子体反应来纯化。 这样就不需要清除和抽空等离子体处理室，并且可以用净化等离子体源气体稳定压力。 因此，可以在不关闭等离子体处理室中的等离子体的情况下进行生长和净化。

公开(公告)号：WO2004064099A3

公开(公告)日：2004-07-29

申请号：PCT/US2003/026264

申请日：2003-08-20

Applicant: CDREAM DISPLAY CORPORATION

Inventor： KANG, Simon ,  BAE, Craig ,  KIM, jung, Jao

IPC: H01J1/05

Abstract: A flat panel display and a method for forming a carbon nanotube based flat panel display. In one embodiment, the flat panel display includes a barrier layer formed between a catalyst layer upon which microstructures of carbon nanotubes are formed and a resistor layer. The barrier layer acts as an anti diffusion layer between the catalysts layer and the resistor layer to prevent the catalyst layer from diffusing into the resistor layer during the growing of the carbon nanotubes. The barrier layer also enhances the adhesion characteristics of the catalyst layers to enable the uniform growth of the carbon nanotube structures on the catalyst layer.

公开(公告)号：WO2004048258A3

公开(公告)日：2004-06-10

申请号：PCT/US2003/037576

申请日：2003-11-21

Applicant: cDREAM DISPLAY CORPORATION

Inventor： KANG, Sung, Gu ,  BAE, Craig

IPC: C30B29/04

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-­treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth stop to the post treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.

公开(公告)号：EP1547114A2

公开(公告)日：2005-06-29

申请号：EP03815183.3

申请日：2003-08-20

Applicant: Cdream Display Corporation

Inventor： KANG, Simon ,  BAE, Craig ,  KIM, jung, Jao

IPC: H01J1/05

CPC classification number: B82Y10/00 ,  H01J1/3048 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/952

Abstract: A flat panel display and a method for forming a carbon nanotube based flat panel display. In one embodiment, the flat panel display includes a barrier layer formed between a catalyst layer upon which microstructures of carbon nanotubes are formed and a resistor layer. The barrier layer acts as an anti diffusion layer between the catalysts layer and the resistor layer to prevent the catalyst layer from diffusing into the resistor layer during the growing of the carbon nanotubes. The barrier layer also enhances the adhesion characteristics of the catalyst layers to enable the uniform growth of the carbon nanotube structures on the catalyst layer.

公开(公告)号：EP1563122A2

公开(公告)日：2005-08-17

申请号：EP03789997.8

申请日：2003-11-21

Applicant: Cdream Display Corporation

Inventor： KANG, Sung, Gu ,  BAE, Craig

IPC: C30B29/04 ,  C30B29/06

CPC classification number: C30B25/00 ,  B82Y30/00 ,  C30B29/605 ,  C30B33/12 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/845

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-­treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth stop to the post treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.

公开(公告)号：EP1563121A2

公开(公告)日：2005-08-17

申请号：EP03789929.1

申请日：2003-11-21

Applicant: Cdream Display Corporation

Inventor： KANG, Sung, Gu ,  BAE, Craig

IPC: C30B23/00

CPC classification number: C30B25/105 ,  B82Y30/00 ,  C30B29/605 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/845

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas. Accordingly, the growth and the purification may be performed without shutting off the plasma in the plasma process chamber.

Abstract translation: 使用等离子体化学沉积工艺在衬底的表面上形成碳纳米管。 - 纳米管生长后，在新形成的纳米管结构上进行纯化步骤。 纯化从生长的纳米管壁去除石墨和其他碳颗粒并控制纳米管层的厚度。 在相同的基底温度下用等离子体进行纯化。 为了净化，将用作等离子体化学沉积的源气体作为添加剂添加的含氢气体用作等离子体源气体。 因为用于纯化等离子体的源气体作为添加剂添加到用于化学等离子体沉积的源气体中，所生长的碳纳米管通过与在等离子体处理室中维持的连续等离子体反应而被净化。 这消除了清洗和排空等离子体处理室以及使用净化等离子体源气体稳定压力的需要。 因此，可以执行生长和纯化而不关闭等离子体处理室中的等离子体。