公开(公告)号：US07317566B2

公开(公告)日：2008-01-08

申请号：US11162106

申请日：2005-08-29

Applicant: D. Morgan Tench ,  Michael A. Cunningham ,  Paul H. Kobrin

Inventor： D. Morgan Tench ,  Michael A. Cunningham ,  Paul H. Kobrin

IPC: G02F1/15 ,  G02F1/153 ,  G02F1/00 ,  H01L21/00

CPC classification number: G02F1/155 ,  G02F1/13439 ,  G02F1/1506

Abstract: Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

Abstract translation: 通过使用包括对辐射透明的电阻层的电极来改善用于控制电磁辐射传播的光调制装置的开关均匀性。 电阻层优选是夹在铟锡氧化物层或另一透明导体层之间的宽带隙氧化物的内层，并且可以具有均匀的厚度，或者可以是渐变的，以进一步提高开关均匀性。 该电极可以与电致变色和可逆电化学镜（REM）智能窗装置一起使用，以及基于各种技术的显示装置。

公开(公告)号：US06709564B1

公开(公告)日：2004-03-23

申请号：US09410250

申请日：1999-09-30

Applicant: D. Morgan Tench ,  John T. White ,  Dieter Dornisch ,  Maureen Brongo

Inventor： D. Morgan Tench ,  John T. White ,  Dieter Dornisch ,  Maureen Brongo

IPC: C25D338

CPC classification number: C25D3/38 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/4846 ,  H01L21/76877

Abstract: The acid copper sulfate solutions used for electroplating copper circuitry in trenches and vias in IC dielectric material in the Damascene process are replaced with a type of plating system based on the use of highly complexing anions (e.g., pyrophosphate, cyanide, sulfamate, etc.) to provide an inherently high overvoltage that effectively suppresses runaway copper deposition. Such systems, requiring only one easily-controlled organic additive species to provide outstanding leveling, are more efficacous for bottom-up filling of Damascene trenches and vias than acid copper sulfate baths, which require a minimum of two organic additive species. The highly complexed baths produce fine-grained copper deposits that are typically much harder than large-grained acid sulfate copper deposits, and which exhibit stable mechanical properties that do not change with time, thereby minimizing “dishing” and giving more consistent CMP results. The mechanical properties and texture of the fine-grained deposits are also much less substrate dependent, which minimizes the effects of variations and flaws in the barrier and seed layers. The resistivity of pyrophosphate and annealed acid sulfate copper deposits are approximately equivalent.

Abstract translation: 用于电镀铜电路的酸性硫酸铜溶液用于在马赛克（Damascene）工艺中的IC电介质材料的沟槽和通孔中电镀铜电路，该电镀系统基于使用高度络合的阴离子（如焦磷酸盐，氰化物，氨基磺酸盐等） 以提供有效抑制失控的铜沉积的固有的高过电压。 与需要至少两种有机添加物种的酸性硫酸铜浴相比，仅需要一种容易控制的有机添加剂来提供优异的流平性的这种系统对于自底向上填充大马士革沟槽和通孔更有效。 高度复杂的浴槽产生细粒度的铜沉积物，其通常比大粒度的硫酸硫酸铜沉积物更硬，并且其表现出不会随时间变化的稳定的机械性能，从而最小化“凹陷”并提供更一致的CMP结果。 细颗粒沉积物的机械性能和质地也要小得多，从而使屏障和种子层的变化和缺陷的影响最小化。 焦磷酸盐和退火的硫酸硫酸铜沉积物的电阻率大致相当。

公开(公告)号：US5605719A

公开(公告)日：1997-02-25

申请号：US398473

申请日：1995-03-03

Applicant: D. Morgan Tench ,  Egbert U. Beske

Inventor： D. Morgan Tench ,  Egbert U. Beske

IPC: B05D1/18 ,  B05D3/00 ,  B23K1/20 ,  H05K3/00 ,  H05K3/34 ,  C23C16/00

CPC classification number: B23K1/203 ,  H05K3/0085 ,  H05K3/3489 ,  B23K2201/42

Abstract: A method is provided for dynamically transporting and applying a liquid to a surface, such as the bottom surface of a printed wiring assembly (PWA). The liquid may comprise an aqueous reducing agent solution for removing surface oxides prior to a soldering operation. The PWA is placed in proximity with the treatment solution held in a reservoir. Gas bubbles generated in the solution dynamically elevate and apply the solution to the bottom surface of the PWA. The bubbles may be formed by a non-oxidizing gas, such as nitrogen, introduced through a porous material. A flat surface of porous material produces a uniform bubble size that allows controlled and precise application of the solution. The porous material and the gas pressure may be varied to so that the bubbles elevate the solution to the desired level. The gas bubbles are short-lived (without surfactants) so that rapid transport, replenishment, and regeneration of the solution can be achieved. Moreover, nitrogen gas is injected at the PWA surface as the bubbles burst so that reaction of the solution or the PWA with oxygen is minimized. The gas bubble method also minimizes the pressure that forces treatment liquid through PWA through-holes to the top surface where it can be difficult to remove.

Abstract translation: 提供了一种用于将液体动态地输送和施加到诸如印刷线路组件（PWA）的底表面的表面的方法。 液体可以包含用于在焊接操作之前去除表面氧化物的水性还原剂溶液。 PWA被放置在与储存器中保持的处理溶液附近。 在溶液中产生的气泡动态地提升并将溶液施加到PWA的底面。 气泡可以由通过多孔材料引入的非氧化性气体例如氮气形成。 多孔材料的平坦表面产生均匀的气泡尺寸，允许控制和精确地施加溶液。 可以改变多孔材料和气体压力，使得气泡将溶液提升到所需的水平。 气泡短暂（不含表面活性剂），可以快速运输，补充和再生溶液。 此外，当气泡爆裂时，在PWA表面注入氮气，使得溶液或PWA与氧气的反应最小化。 气泡法还使通过PWA通孔迫使处理液体到达难以去除的顶部表面的压力最小化。

公开(公告)号：US5304297A

公开(公告)日：1994-04-19

申请号：US23653

申请日：1993-02-26

Applicant: D. Morgan Tench ,  Dennis P. Anderson ,  Leslie F. Warren, Jr.

Inventor： D. Morgan Tench ,  Dennis P. Anderson ,  Leslie F. Warren, Jr.

IPC: C25C3/24 ,  B23K1/20 ,  B23K35/38 ,  C23C18/16 ,  C23G1/36 ,  C25C1/00 ,  C25C1/14 ,  C25C3/36 ,  C25D21/18 ,  C25D5/02 ,  C25D17/00

CPC classification number: B23K1/206 ,  B23K35/38 ,  C23C18/1617 ,  C23G1/36 ,  C25D21/18 ,  B23K2201/42

Abstract: A system is provided for regenerating reducing agents used in ancillary chemical or electrochemical processes such as restoring solderability of electronic components. The system includes a cathode, an anode, and an electrolyte system that is separated by a semipermeable ionic barrier into a catholyte and an anolyte. The catholyte includes the reduced member of a redox couple, which can be regenerated electrochemically. The redox couple of the electrolyte system is charged like a battery and discharged during the ancillary process. Regeneration of the reduced member of the redox couple is accomplished at the cathode. The cathode comprises an electrode having a high hydrogen overvoltage so that sufficiently negative potentials can be attained while minimizing hydrogen evolution. Chemical balance is maintained by the semipermeable ionic barrier, which permits proton migration from the anolyte to the catholyte but acts as a barrier against diffusion and migration of cations from the catholyte to the anolyte. Ideally, the anodic reaction is breakdown of water to form oxygen, which is vented, and protons that migrate across the ionic barrier to the catholyte replacing protons consumed in the ancillary process. The overall reaction in a system for restoring solderability of electronic components is reduction of metallic oxide to metal and release of oxygen, with no net chemical change in the composition of the regeneration system.

Abstract translation: 提供了用于再生用于辅助化学或电化学过程中的还原剂的系统，例如恢复电子部件的可焊性。 该系统包括阴极，阳极和电解质系统，其由半透性离子屏障分离成阴极电解液和阳极电解液。 阴极电解质包括氧化还原对的还原成员，其可以电化学地再生。 电解液系统的氧化还原电极像电池一样充电并在辅助过程中放电。 在阴极处实现氧化还原对的还原成员的再生。 阴极包括具有高氢过电压的电极，使得可以在使氢析出最小化的同时实现足够的负电位。 化学平衡通过半透性离子屏障保持，这允许质子从阳极电解液迁移到阴极电解液，但是作为阻止阳离子从阴极电解液到阳极电解液的扩散和迁移的屏障。 理想地，阳极反应是水的分解以形成被排出的氧，以及迁移穿过离子屏障到阴极电解液的质子代替在辅助过程中消耗的质子。 用于恢复电子部件的可焊性的系统中的总体反应是将金属氧化物还原为金属和释放氧，而在再生系统的组成中没有净化学变化。

公开(公告)号：US06798556B2

公开(公告)日：2004-09-28

申请号：US10355760

申请日：2003-01-31

Applicant: D. Morgan Tench ,  Ichiro Sugioka

Inventor： D. Morgan Tench ,  Ichiro Sugioka

IPC: G02F1153

CPC classification number: G02F1/1506 ,  E06B9/24 ,  E06B2009/2464 ,  G02F2001/134318

Abstract: The present invention is a reversible electrodeposition optical modulation device employing a segmented counter electrode that permits localized areas of a continuous optical modulation electrode to be switched independently of each other. Such devices can be configured to enable practically seamless switching over the entire device for smart window and adjustable mirror applications, or to minimize cross-talk and pixel overlap for display applications. Since the electrical contacts and switching circuitry are located on the counter electrode, more active area is available for optical modulation.

Abstract translation: 本发明是一种可逆电沉积光调制装置，其采用允许连续光调制电极的局部区域彼此独立地切换的分段对电极。 可以将这样的设备配置为实现智能窗口和可调镜应用的整个设备的实际无缝切换，或者使显示应用的串扰和像素重叠最小化。 由于电触点和开关电路位于对电极上，所以更有效的区域可用于光调制。

公开(公告)号：US06503343B1

公开(公告)日：2003-01-07

申请号：US09658643

申请日：2000-09-11

Applicant: D. Morgan Tench ,  Leslie F. Warren, Jr. ,  John T. White

Inventor： D. Morgan Tench ,  Leslie F. Warren, Jr. ,  John T. White

IPC: C23C2282

CPC classification number: H01L21/288 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/42 ,  C23C18/54 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00

Abstract: A direct displacement plating process provides a uniform, adherent coating of a relatively stable metal (e.g., nickel) on a highly reactive metal (e.g., aluminum) that is normally covered with a recalcitrant oxide layer. The displacement reaction proceeds, preferably in a nonaqueous solvent, as the oxide layer is dissolved by a fluoride activator. Halide anions are used to provide high solubility, to serve as an anhydrous source of stable metal ions, and to control the rate of the displacement reaction. A low concentration of activator species and little or no solution agitation are used to cause depletion of the activator species within pores in the surface oxide so that attack of the reactive metal substrate is minimized. Used in conjunction with electroless nickel deposition to thicken the displacement coating, this process can be used to render aluminum pads on IC chips solderable without the need for expensive masks and vacuum deposition operations. Such coatings can also be used to preserve or restore wire bondability, or for corrosion protection of aluminum and other reactive structural metals and alloys. A thin layer of immersion gold can be used to protect the thickened coating from oxidation. The solderable aluminum IC chip pads provide the basis for a maskless bumping process for flip chip attachment.

Abstract translation: 直接移位电镀方法提供了在通常被顽固氧化物层覆盖的高反应性金属（例如铝）上的相对稳定的金属（例如镍）的均匀涂层。 随着氧化物层被氟化物活化剂溶解，置换反应优选在非水溶剂中进行。 卤化阴离子用于提供高溶解度，用作稳定金属离子的无水源，并控制置换反应的速率。 使用低浓度的活化剂物质和很少或不用溶液搅拌来引起表面氧化物中的孔隙内的活化剂物质的耗尽，从而使反应性金属底物的侵蚀最小化。 与无电镍沉积结合使用以增加位移涂层，该工艺可用于使IC芯片上的铝焊盘可焊接，而无需昂贵的掩模和真空沉积操作。 这种涂层也可用于保护或恢复线焊接性，或用于铝及其他反应性结构金属和合金的腐蚀保护。 浸金的薄层可用于保护增厚涂层免受氧化。 可焊接铝IC芯片焊盘为倒装芯片安装的无掩模凸块工艺提供了基础。

公开(公告)号：US6166847A

公开(公告)日：2000-12-26

申请号：US333385

申请日：1999-06-15

Applicant: D. Morgan Tench ,  Leslie F. Warren, Jr. ,  Michael A. Cunningham

Inventor： D. Morgan Tench ,  Leslie F. Warren, Jr. ,  Michael A. Cunningham

IPC: G02F1/15 ,  G02F1/153 ,  G02F1/155

CPC classification number: G02F1/1506 ,  G02F1/155

Abstract: An electrochemical mirror includes a transparent first electrode and a second electrode. An electrolytic solution, disposed between the first and second electrodes, contains ions of a metal which can electrodeposit on the electrodes. A negative electrical potential applied to the first electrode causes deposited metal to be dissolved from the second electrode into the electrolytic solution and to be electrodeposited from the solution onto the first electrode, thereby affecting the reflectivity of the mirror for electromagnetic radiation. A surface modification layer applied to the first electrode ensures that the electrodeposit is substantially uniform, resulting in a mirror layer which increases the reflectivity of the mirror. A positive electrical potential applied to the first electrode causes deposited metal to be dissolved from the first electrode and electrodeposited from the solution onto the second electrode, thereby decreasing the reflectivity of the mirror.

Abstract translation: 电化学反应镜包括透明的第一电极和第二电极。 设置在第一和第二电极之间的电解液含有能够电沉积在电极上的金属离子。 施加到第一电极的负电位使得沉积的金属从第二电极溶解到电解液中并且从溶液中电沉积到第一电极上，从而影响用于电磁辐射的反射镜的反射率。 施加到第一电极的表面改性层确保电沉积物基本均匀，从而产生增加反射镜反射率的镜面层。 施加到第一电极的正电位使沉积的金属从第一电极溶解并从溶液中电沉积到第二电极上，从而降低反射镜的反射率。

公开(公告)号：US5903382A

公开(公告)日：1999-05-11

申请号：US994413

申请日：1997-12-19

Applicant: D. Morgan Tench ,  Leslie F. Warren, Jr.

Inventor： D. Morgan Tench ,  Leslie F. Warren, Jr.

IPC: G02F1/15 ,  G02F1/155 ,  G02F1/153

CPC classification number: G02F1/1506 ,  G02F1/155 ,  G02F2001/1555 ,  G02F2201/121

Abstract: An electrochemical device includes a transparent first electrode and a second electrode distributed in localized areas. An electrolytic solution, disposed between and in electrical contact with the first and second electrodes, contains ions of a metal which can electrodeposit on the first and second electrodes. Atoms of this metal are deposited on the first or the second electrode. A negative electrical potential applied to the first electrode causes deposited metal to be dissolved from the second electrode into the electrolytic solution and to be electrodeposited from the solution onto the first electrode, thereby affecting the propagation of electromagnetic radiation through the device. Conversely, a positive electrical potential applied to the first electrode causes deposited metal to be dissolved from the first electrode and electrodeposited from the solution onto the second electrode, thereby increasing the transmissivity of the device.

Abstract translation: 电化学装置包括分布在局部区域中的透明第一电极和第二电极。 设置在第一和第二电极之间并与之电接触的电解溶液包含能够电沉积在第一和第二电极上的金属离子。 该金属的原子沉积在第一或第二电极上。 施加到第一电极的负电位使得沉积的金属从第二电极溶解到电解液中并且从溶液中电沉积到第一电极上，从而影响电磁辐射通过该装置的传播。 相反，施加到第一电极的正电位使沉积的金属从第一电极溶解并从溶液中电沉积到第二电极上，从而增加了器件的透射率。

公开(公告)号：US5425859A

公开(公告)日：1995-06-20

申请号：US60328

申请日：1993-05-11

Applicant: D. Morgan Tench ,  Dennis P. Anderson

Inventor： D. Morgan Tench ,  Dennis P. Anderson

IPC: B23K1/20 ,  G01N27/416 ,  G01N27/42 ,  G01N27/48 ,  H05K3/07 ,  H05K3/22 ,  H05K3/34 ,  G01N27/26

CPC classification number: B23K1/206 ,  B23K1/20 ,  G01N27/4161 ,  G01N27/42 ,  H05K3/22 ,  B23K2201/40 ,  B23K2201/42 ,  H05K2203/0315 ,  H05K2203/1157 ,  H05K3/07 ,  H05K3/3489

Abstract: A sequential electrochemical reduction method and apparatus are provided for assessing and restoring solderability of electronic component leads. The method detects and quantifies the presence of metallic oxides that are detrimental to solderability by sequential electrochemical reduction in contact with an electrolyte in an inert atmosphere. A cathode having a high hydrogen overvoltage is placed in contact with the electrolyte. A solderable portion of the component to be tested is placed in contact with the cathode and the electrolyte. An inert counter electrode and a reference electrode are also placed in contact with the electrolyte. A current is passed between the cathode and inert electrode, and the voltage and current are measured as a function of time during reduction of metallic oxides on the solderable portions of the component. The measurements of voltage, current, time, and charge density may be compared with baseline data from specimens having known oxide compositions that correlate with degradation of solderability.

Abstract translation: 提供了用于评估和恢复电子元件引线的可焊性的顺序电化学还原方法和装置。 该方法通过在惰性气氛中与电解质接触的顺序电化学还原来检测和量化对可焊性不利的金属氧化物的存在。 具有高氢过电压的阴极与电解质接触。 要测试的组件的可焊接部分与阴极和电解质接触。 惰性对电极和参比电极也与电解质接触。 在阴极和惰性电极之间通过电流，并且在部件的可焊接部分上的金属氧化物还原期间，测量电压和电流作为时间的函数。 可以将电压，电流，时间和电荷密度的测量值与具有与可焊性劣化相关的已知氧化物组成的样品的基线数据进行比较。

公开(公告)号：US5178965A

公开(公告)日：1993-01-12

申请号：US837297

申请日：1992-02-14

Applicant: D. Morgan Tench ,  Dennis P. Anderson

Inventor： D. Morgan Tench ,  Dennis P. Anderson

IPC: B23K1/00 ,  B23K1/20 ,  C23F1/18 ,  C25D5/34 ,  H05K1/11 ,  H05K3/24 ,  H05K3/34 ,  H05K3/38 ,  H05K3/42

CPC classification number: H05K3/3473 ,  B23K1/0008 ,  B23K1/20 ,  C23F1/18 ,  H05K3/383 ,  B23K2201/36 ,  B23K2203/12 ,  H05K1/111 ,  H05K2203/0307 ,  H05K2203/0392 ,  H05K2203/043 ,  H05K2203/0723 ,  H05K2203/125 ,  Y10T428/12472 ,  Y10T428/12715

Abstract: A roughened surface of a conductive substrate, such as copper, provides uniform Sn-Pb solder coatings and improved solder retention at printed wiring board (PWB) plated through-hole rims (knees) and surface pads during solder dipping or reflow. A high density of copper surface features of moderate average roughness provides the most favorable solder coating thickness distribution. Various chemical or electrochemical etching processes may be used to produce the desired copper surface topography. Reflowed solder thickness distribution in a PWB knee region attained with a ferric chloride copper etching process peaks at 4 .mu.m, which provides a good margin of safety for preventing exposure/oxidation of the underlying Cu-Sn intermetallics. The ferric chloride copper etching process yields only 1% of solder thickness measurements in the undesirable 0-1.5 .mu.m range for plated through-hole rims. Copper surface roughening is expected to greatly reduce solderability loss in mass produced PWBs. In addition, solder bearing on PWB surface pads is avoided with copper surface roughening so that alignment of surface mount component leads prior to soldering is greatly facilitated.

Abstract translation: 诸如铜的导电基底的粗糙表面在焊料浸渍或回流期间提供均匀的Sn-Pb焊料涂层和改进的印刷线路板（PWB）电镀通孔边缘（膝盖）和表面焊盘处的焊料保持性。 中等平均粗糙度的高密度铜表面特征提供了最有利的焊料涂层厚度分布。 可以使用各种化学或电化学蚀刻工艺来产生所需的铜表面形貌。 用氯化铜铜蚀刻工艺获得的PWB膝部区域中的回流焊料厚度分布达到4μm，这为防止下面的Cu-Sn金属间化合物的暴露/氧化提供了良好的安全余地。 氯化铁铜蚀刻工艺在镀层通孔边缘的不合需要的0-1.5微米范围内仅产生1％的焊料厚度测量。 铜表面粗糙度预计将大大降低批量生产的PWBs的可焊性损失。 此外，通过铜表面粗糙化避免了PWB表面焊盘上的焊料轴承，从而大大方便了焊接前的表面安装部件引线的对准。