Abstract:
PROBLEM TO BE SOLVED: To provide a complex substrate for EL panel formation of which flatness of a light emission layer side surface of a thick film dielectric layer and a dielectric constant of the thick film dielectric layer are improved by using hydrostatic pressing method, having a structure successively laminating at least an electrode layer and the thick-film dielectric layer on the substrate, and to provide a manufacturing method of the same, and an EL element panel using the complex substrate for EL panel formation. SOLUTION: The thick-film dielectric layer is formed by attaching the not-yet-sintered dielectric layer mainly composed of dielectric powder to a flat face side of a standard plate, compressing it by hydrostatic pressing method, and by sintering it. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To reduce the curling of an electrode at its edges. SOLUTION: An electrode is formed of thick film conductor material which at least contains conductive powder and glass frit, where in the electrode has a two-layered structure composed of an upper layer 13 whose main component is conductor powder and a lower layer 12 whose main component is glass frit. The edge of the electrode is less curled due to the tension of glass frit contained in the lower layer 12. As the upper layer 13 is small in glass frit content, the electrode is improved in wettability to electrode repairing solder.
Abstract:
PROBLEM TO BE SOLVED: To make a laminated electrode useable as an electrode for display and to prevent the coloration of glass substrates even if materials contg. silver in metallic films are used by forming the laminated electrodes out of a lower layer of transparent conductive films consisting of tin oxide contg. fluorine as a dopant and an upper layer of metallic films contg. silver. SOLUTION: Two sheets of glass substrates 1, 2 are disposed facing each other and in parallel. Both are held with a specified spacing by cell barriers 3 disposed in parallel with each other on the glass substrate 2, which is a rear surface plate. The composite electrodes 6 comprising the holding electrodes 4, which are the transparent electrodes and the bus electrodes 5, which are the metallic electrodes are formed in parallel with each other on the rear surface side of the glass substrate, which is the front surface plate. A dielectric layer 7 covering these electrodes is formed and further a protective layer (MgO layer) 8 is formed thereon. The holding electrodes 4, which are the transparent electrodes consist of the transparent conductive films consisting of tin oxide contg. the fluorine as the dopant and the bus electrodes 5, which are the metallic electrode consist of the metallic films contg. the silver.
Abstract:
PROBLEM TO BE SOLVED: To three-dimensionally control a pattern shape, and finish it as in design dimension, in case of patterning a thick film glass layer by a sand blast method. SOLUTION: In a method for performing patterning of a thick film glass layer 4 by a sand blast method after a mask layer 5 having sand blast resistance is formed on the thick film glass layer 4 at least containing an inorganic glass powder and a resin binder formed on a base material 1, sand blast work is performed so that a sectional shape of the thick film glass layer 4 satisfies a condition of formulae: Wm×0.75
Abstract:
PROBLEM TO BE SOLVED: To manufacture in a simplified process, and to prevent silver (Ag) from diffusing into a glass base in a burning process. SOLUTION: In a first process, a surface forming at least an electrode is polished in a glass base 1. In a second process, an electrode 31 is formed of conductive material containing Ag. The electrode is manufactured through the procedure including the first and second process. Furthermore, a transparent conductive film 4 composed mostly of indium oxide or tin oxide is configured between the glass base 1 and the electrode 31 formed of the conductive material containing Ag. By polishing the surface of the glass base 1 in the first process, colloid formation is restrained in the glass produced in burning of the material to prevent discoloration of the glass base 1 and to improve insulation between the electrodes.
Abstract:
PROBLEM TO BE SOLVED: To shorten the time required for machining and prevent a formed thin-film pattern from being chipped, when the thick-film pattern is formed by the sand blast method. SOLUTION: A first pattern-forming layer 4a containing at least an inorganic binder is formed on a substrate 1, and the first pattern forming layer 4a is baked in the peak range from the temperature lower than the yield point of the inorganic binder by 20 deg.C to the temperature higher than the yield point by 20 deg.C. A second pattern forming layer 4b containing at least an organic binder is formed on the first pattern forming layer 4a, a sand blast mask 5 having the prescribed pattern is formed on it, and the portions of the pattern forming layers 4a, 4b where no sand blast mask 5 is formed are ground by the sand blast method. When the first pattern forming layer 4a is baked, the organic binder in it is burnt down, and the speed of sand blast machining is accelerated.
Abstract:
PURPOSE:To reduce variations of heights of transistor elements formed on a transparent substrate for use in active matrix liquid crystal and the like. CONSTITUTION:A first metal layer comprising Ta is formed on a glass substrate 1, on which a second metal layer comprising Al is formed. The second metal layer is etched in which a remaining metal layer is left behind only in a transistor element information area. This portion is dipped in an electrolyte solution and is rendered to anode oxidization, whereby an exposed portion of the first metal layer becomes a Ta2O5 layer 31a owing to the oxidization. Part of the remaining metal layer on the surface side of the same becomes an Al2O3 layer 22c while part of the same on the side of the substrate is left behind as an Al layer 22b. The Ta layer 21b and the Al layer 22b are used as a gate electrode, and the Al2O3 layer 22c is used as a gate insulating film.
Abstract:
PROBLEM TO BE SOLVED: To provide an electrode structure excellent in adhesion to a transparent electrode layer and having less contact resistance; and provide a solar cell and the like equipped with the electrode structure.SOLUTION: An electrode structure 6 comprises: a first conductive layer 6a provided on a transparent electrode layer 5 in a patterned manner and having conductive particles and a high molecular compound; and a second conductive layer 6b provided on the first conductive layer 6a and having conductive particles but not having a high molecular compound serving as a binder. It is preferable that the second conductive layer 6b contains at least two types of conductive particle groups having particle-size distributions different from each other, and that a content rate of the conductive particle group is more than 99.0 mass%. When a hardening agent hardened at a temperature not less than 120°C and less than 180°C is used as the high molecular compound, the electrode structure can be used favorably as a collecting electrode of a solar cell having a chalcopyrite compound semiconductor layer.
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate with a reduced step to eliminate a defect of an upper layer caused by the step of an edge of an insulation layer when the insulation layer such as an dielectric layer on the substrate and various layers are formed thereon; and to provide its manufacturing method. SOLUTION: In a laminated structure where an electrode layer and the insulation layer 3 are sequentially stacked on this substrate 2, the above problem can be solved by setting the maximum thickness at an edge part within 100 μm from an end of the insulation layer 3 to 5 μm or less, by stacking therefor a masking layer thinner than the insulation layer in a non-planning section in contact with the outside of an insulation layer stacking planning section on the substrate, by applying a composition for forming the insulation layer to surfaces including the masking layer, and by removing it along with the masking layer before solidifying it. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a plasma-display-panel electrode which can be fabricated by processes that are not complicated and which does not cause Ag to diffuse into a glass substrate during a baking process. SOLUTION: An electrode 9 provided on the front or back plate of a plasma display panel comprises an Ag-diffusion preventing layer 51 and an upper layer 56 provided thereon, which is made form a conductor material composed chiefly of Ag. A single metal or alloy with a melting point of 500 deg.C or higher is used in the diffusion preventing layer 51. The linear width of the diffusion preventing layer 51 is equal to or greater than that of the upper layer 56. During the process of forming the electrode, a glass substrate 2 does not show amber color even after baking process and therefore does not affect the image displayed on the panel.