Semiconductive compositions
    1.
    发明专利
    Semiconductive compositions 审中-公开
    半导体组成

    公开(公告)号:JP2013224429A

    公开(公告)日:2013-10-31

    申请号:JP2013098249

    申请日:2013-05-08

    Abstract: PROBLEM TO BE SOLVED: To provide a multiphase semiconductive shield composition with reduced conductive filler loading while maintaining a high level of conductivity and improving processability.SOLUTION: The present invention is a polymer composite made from or containing: (i) a phase I material consisting essentially of a polar copolymer of ethylene and an unsaturated ester having 4 to 20 carbon atoms; (ii) a phase II material consisting essentially of a nonpolar, low density polyethylene; and (iii) a conducting filler material dispersed in the phase I material and/or the phase II material in an amount sufficient to be equal to or greater than the amount required to generate a continuous conducting network in the phase I and phase II materials. The invention also includes articles made from the polymer composite.

    Abstract translation: 要解决的问题:提供具有降低的导电填料负载的多相半导体屏蔽组合物,同时保持高水平的导电性并改善加工性能。解决方案:本发明是一种聚合物复合材料,其由或包含:(i) 基本上由乙烯和具有4-20个碳原子的不饱和酯的极性共聚物组成; (ii)基本上由非极性低密​​度聚乙烯组成的II相材料; 和(iii)分散在I相材料和/或II相材料中的导电填料,其量足以等于或大于在I相和II相材料中产生连续导电网络所需的量。 本发明还包括由聚合物复合材料制成的制品。

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