公开(公告)号：EP3038125A1

公开(公告)日：2016-06-29

申请号：EP14307127.2

申请日：2014-12-22

Applicant: DelfMEMS SAS

Inventor： Robin, Renaud ,  Lorphelin, Nicolas ,  Segueni, Karim

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/0188 ,  H01H49/00 ,  H01H2059/0027 ,  H01H2059/0036 ,  H01H2227/004

Abstract: The present invention relates to a method of manufacturing an MEMS device, in particular, an MEMS switch, comprising the steps of forming posts and a conduction (transmission) line over a substrate and forming a membrane over the posts and the conduction line comprising forming a first membrane layer and a second membrane layer over the first membrane layer in a region over one of the posts and/or a region over the conduction line such that the first membrane layer has a region where the second membrane layer is not formed adjacent to the region where the second membrane layer is formed. Moreover, it is provided an MEMS device, in particular, an MEMS switch, comprising posts and a conduction (transmission) line formed over a substrate and a membrane over the posts and the conduction line. The membrane comprises a first membrane layer and a second membrane layer formed over the first membrane layer in a region over one of the posts and/or a region over the conduction line such that the first membrane layer has a region where the second membrane layer is not formed adjacent to the region where the second membrane layer is formed.

Abstract translation: 本发明涉及一种制造MEMS器件，特别是MEMS开关的方法，包括以下步骤：在衬底上形成柱和导电（透射）线，并在柱上形成膜，导线包括形成 第一膜层和第二膜层之上的第一膜层和第二膜层上的第一膜层和第二膜层之间的区域，使得第一膜层具有不与第二膜层相邻的区域 形成第二膜层的区域。 此外，它提供了一种MEMS器件，特别是MEMS开关，其包括柱和形成在衬底上的导电（透射）线和在柱和导电线上的膜。 所述膜包括第一膜层和第二膜层，所述第一膜层和所述第二膜层形成在所述第一膜上方的区域中，并且在所述导电线上方的区域和/或所述导电线上的区域中形成在所述第一膜层上，使得所述第一膜层具有第二膜层 不与形成有第二膜层的区域相邻地形成。