Discrete circuit for driving field effect transistors
    1.
    发明公开
    Discrete circuit for driving field effect transistors 有权
    Discrete Schaltung zur Ansteuerung von Feldeffekttransistoren

    公开(公告)号:EP1635463A2

    公开(公告)日:2006-03-15

    申请号:EP05076992.6

    申请日:2005-08-31

    CPC classification number: H03K17/0822

    Abstract: An electronic circuit for protecting a field effect transistor from high voltage includes a switching device having a first state in which the switching device turns the field effect transistor ON, and a second state in which the switching device turns the field effect transistor OFF. A charging device is connected to the switching device and receives an electrical charge when an electrode of the field effect transistor is shorted to a voltage source. The charging device applies the electrical charge to the switching device to thereby place the switching device in the second state.

    Abstract translation: 用于将场效应晶体管保护为高电压的电子电路包括具有第一状态的开关器件,其中开关器件使场效应晶体管导通,以及第二状态,其中开关器件使场效应晶体管截止。 充电装置连接到开关装置并且当场效应晶体管的电极短路到电压源时接收电荷。 充电装置将电荷施加到开关装置,从而将开关装置置于第二状态。

    Discrete circuit for driving field effect transistors
    4.
    发明公开
    Discrete circuit for driving field effect transistors 有权
    用于场效应晶体管的控制分立电路

    公开(公告)号:EP1635463A3

    公开(公告)日:2007-04-25

    申请号:EP05076992.6

    申请日:2005-08-31

    CPC classification number: H03K17/0822

    Abstract: An electronic circuit for protecting a field effect transistor from high voltage includes a switching device having a first state in which the switching device turns the field effect transistor ON, and a second state in which the switching device turns the field effect transistor OFF. A charging device is connected to the switching device and receives an electrical charge when an electrode of the field effect transistor is shorted to a voltage source. The charging device applies the electrical charge to the switching device to thereby place the switching device in the second state.

    Variable attenuation circuit for a differential variable reluctance sensor with temperature compensation for an initial threshold and passive RC filter
    5.
    发明公开
    Variable attenuation circuit for a differential variable reluctance sensor with temperature compensation for an initial threshold and passive RC filter 审中-公开
    可变衰减电路用于与温度补偿的差分Reluktanzgeber用于初始阈值和无源RC滤波器

    公开(公告)号:EP1361444A2

    公开(公告)日:2003-11-12

    申请号:EP03076328.8

    申请日:2003-05-05

    CPC classification number: G01D5/2013 G01D3/02 G01P3/487 G01P3/488 G01P3/489

    Abstract: A variable reluctance sensor interface module (25) having a variable attenuation circuit (24) and a rectifier and differential to single-ended conversion circuit (32) for operating in a current mode to attenuate a differential input voltage. The variable attenuation circuit (24) receives an input differential voltage from a magnetic sensor (15), converts the differential voltage to current, and variably attenuates the current. The rectifier and differential to single-ended conversion circuit (32) converts the variably attenuated current to a voltage output. The input circuit includes an RC filter (400) that attenuates high frequency signals. An initial threshold circuit (410) generates an initial threshold voltage that compensates for internal resistance variations, caused e.g. by temperature variations.

    Abstract translation: 可变磁阻传感器接口模块(25),具有用于在电流模式下操作,以衰减的差分输入电压的可变衰减电路(24)和一整流器和差分到单端的转换电路(32)。 可变衰减电路(24)接收输入,以从磁传感器(15)的差分电压的差分电压转换为电流,并且可变地衰减的电流。 整流器和差分到单端的转换电路(32)转换的可变衰减电流的电压输出。 该输入电路包括(400)RC滤波做衰减高频信号。 初始阈值电路(410)生成初始阈值电压的速率没有用于内部电阻的变化进行补偿,引起E. G. 由温度变化。

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