Abstract:
An active fuse includes an active fuse geometry (120) that is used to form both a variable resistor (106) and a select transistor (110). In one embodiment, the active fuse geometry is formed in a portion of an active region (160) of a semiconductor substrate (140), and a select gate (124) is disposed over an end portion (123) of the active fuse geometry to form an integral select transistor (110) for use in programming the active fuse. The use of a shared active fuse geometry within the active region allows for reduced area requirements and improved sensing margins.
Abstract:
A wrap device covers the chest, belly, or both—partially or entirely or wrapping around to promote crawling, and/or keep body warm. This wrap device has fabric with straps to tie or fasten with a fastening device on the back or side of the torso to hold the wrap on the torso. Fabric is of different thicknesses to provide room and angle for hands/legs to move or push more easily to promote crawling, provide cushion, and/or keep the body warm. Nonremovable or removable pad/pads can be attached to the fabric to further adjust the height of the torso from the ground. Pad/pads can also be of different thicknesses and multiple layers of padding can be added. This wrap device does not just promote baby crawling, but it can also be used for baby, child, or adult to help keep torso/body warm, provide cushion, and help prevent getting sick.
Abstract:
A sun visor system includes multiple visors to provide selective window coverage for glare. This system can be employed on the driver side, passenger side, or both. The second visor (50), having pivotal device (56) on support rod (54), can be easily connected to the first visor (20) support rod (24) to provide pivotal movements between the windshield and side window. These visors, first and second, can be moved together or separately to stored positions, windshield and side window blocked positions, or combinations of both positions to provide window protection from glare quickly and easily for windshield, side window, or both. Also support rod of the visor can be made of flexible material, like gooseneck arm, to further provide flexible adjustments of visor to desired positions to block glare from different angles or positions of vehicle window. This adjustable visor system can be applied to a single sun visor system or multiple visors system.
Abstract:
A sun visor system includes multiple visors to provide selective window coverage for glare. This system can be employed on the driver side, passenger side, or both. The second visor (50), having pivotal device (56) on support rod (54), can be easily connected to the first visor (20) support rod (24) to provide pivotal movements between the windshield and side window. These visors, first and second, can be moved together or separately to stored positions, windshield and side window blocked positions, or combinations of both positions to provide window protection from glare quickly and easily for windshield, side window, or both. Also support rod of the visor can be made of flexible material, like gooseneck arm, to further provide flexible adjustments of visor to desired positions to block glare from different angles or positions of vehicle window. This adjustable visor system can be applied to a single sun visor system or multiple visors system.
Abstract:
A method of forming a stacked capacitor structure in a semiconductor device, having metal electrode plates. After depositing the bottom electrode layer (26) and the dielectric layer (28) of the capacitor, a rough patterning step is carried out to roughly pattern or shape the bottom electrode layer and the dielectric layer, and to expose the underlying interlayer dielectric (18). A top electrode layer (32) is then blanket deposited, and another, more precise etching step is carried out to form the final shape of the capacitor element, while leaving behind a portion of the top electrode layer on the interlayer dielectric, which forms a metal interconnect (36). In one embodiment, the electrode layers are comprised of materials having a conductivity greater than doped silicon (either poly or monocrystalline), such as a metal.