公开(公告)号：US20140042581A1

公开(公告)日：2014-02-13

申请号：US13689163

申请日：2012-11-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH IN

Inventor： Bongki MHEEN ,  MyoungSook Oh ,  Kisoo Kim ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H01L31/02 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/02002 ,  H01L31/035272 ,  H01L31/107

Abstract: Disclosed are an avalanche photodiode with a guard ring structure that relieves edge breakdown by an external voltage which is applied through a metal pad which is attached to the guard ring and a manufacturing method thereof. An avalanche photodiode with a guard ring structure includes a plurality of semiconductor layers laminated on a substrate; an active region partially formed above the semiconductor layers; a guard ring which is formed above the semiconductor layers and disposed so as to be spaced apart from the active region and have a ring shape that encloses the active region; and a connecting unit formed on the semiconductor layers to be electrically connected to the guard ring so as to apply an external voltage to the guard ring region. Therefore, the external voltage is applied to the guard ring of the avalanche diode through the connecting unit to relieve the edge breakdown.

Abstract translation: 本发明公开了一种具有保护环结构的雪崩光电二极管及其制造方法，所述雪崩光电二极管通过外部电压消除边缘击穿，所述外部电压通过附着于保护环的金属焊盘而施加。 具有保护环结构的雪崩光电二极管包括层叠在基板上的多个半导体层; 部分地形成在半导体层之上的有源区; 保护环，其形成在半导体层上方并且被设置成与有源区间隔开并且具有包围有源区的环形形状; 以及连接单元，其形成在所述半导体层上以与所述保护环电连接，以将外部电压施加到所述保护环区域。 因此，通过连接单元将外部电压施加到雪崩二极管的保护环，以缓解边缘故障。