公开(公告)号：US20250169139A1

公开(公告)日：2025-05-22

申请号：US18945658

申请日：2024-11-13

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang Hoon KIM ,  Dongwoo SUH ,  Jeong Woo PARK ,  Minkyun SOHN ,  Seong Hyun LEE ,  Wangjoo LEE ,  Jinha KIM ,  Min-A PARK ,  Sun Kyu JUNG ,  Subin HEO

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: Provided is a transistor device including: a substrate; a lower transistor positioned on the substrate and including a lower channel layer, a lower gate, and a lower source/drain region; an upper transistor positioned on the lower transistor and including an upper channel layer, an upper gate, and an upper source/drain region; and an inner spacer configured to insulate the lower transistor from the upper transistor, wherein the inner spacer may be formed by removing a portion of each of a first sacrificial layer and a second sacrificial layer, which are formed above and below the lower channel layer and the upper channel layer and have different Ge contents, to a depth according to a Ge content and then depositing an insulating material.

公开(公告)号：US20230402529A1

公开(公告)日：2023-12-14

申请号：US18327417

申请日：2023-06-01

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sang Hoon KIM ,  Dongwoo SUH ,  JINHA KIM ,  Jeong Woo PARK ,  Seong Hyun LEE ,  Wangjoo LEE

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L29/66545 ,  H01L29/66553 ,  H01L29/42392 ,  H01L29/1054 ,  H01L29/78696

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming alternating layers, where a silicon germanium layer and a silicon layer are alternately stacked, on a substrate, etching the alternating layers to form a fin structure protruding onto the substrate and then forming a silicon nitride film on a surface and a sidewall of each of the alternating layers having the fin structure, sequentially forming a dummy gate and a silicon oxide film on the alternating layers with the silicon nitride film therebetween and then forming a gate spacer on a sidewall of the dummy gate, etching the silicon nitride film upward exposed, and then, etching the alternating layers by using the silicon oxide film, and selectively forming an inner spacer in a sidewall of each of silicon germanium layers among the silicon germanium layers and silicon layers of the etched alternating layers.

公开(公告)号：US20190352181A1

公开(公告)日：2019-11-21

申请号：US16154505

申请日：2018-10-08

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyun-Woo OH ,  Wangjoo LEE

IPC: C01B32/159 ,  H01B1/24 ,  C09D183/04

Abstract: Provided is a method of manufacturing a nanocomposite sensor including providing carbon nanotubes and a polymer to a reactor, applying a magnetic field to inside the reactor, and stirring the carbon nanotubes and the polymer to prepare a first conductive composition, adding a curing agent to the first conductive composition to prepare a second conductive composition, defoaming the second conductive composition, and curing the defoamed second conductive composition.