公开(公告)号：US20240120437A1

公开(公告)日：2024-04-11

申请号：US18535955

申请日：2023-12-11

Applicant: EPISTAR CORPORATION

Inventor： Chia-Chen TSAI ,  Jia-Liang TU ,  Chi-Ling LEE

IPC: H01L33/00 ,  H01L21/66 ,  H01L21/683 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L33/0095 ,  H01L21/6835 ,  H01L22/22 ,  H01L25/0753 ,  H01L33/62 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2933/0066

Abstract: A manufacturing method for a LED is disclosed. The method includes: providing a substrate with an upper surface; preparing a plurality of LEDs on the upper surface; wherein the upper surface is divided into a plurality of zones, the plurality of LEDs composes a plurality of LED groups, and each of the LED group is disposed in one of the plurality of zones; preparing a testing circuit to electrically connecting the plurality of LEDs in one of the plurality of LED groups; testing the plurality of LEDs in the one of the plurality of LED groups by the testing circuit to obtain photoelectrical characteristics of the plurality of LEDs in the one of the plurality of LED groups; and presenting the photoelectric characteristics in an image.

公开(公告)号：US20160141454A1

公开(公告)日：2016-05-19

申请号：US14939829

申请日：2015-11-12

Applicant: Epistar Corporation

Inventor： Hsin-Ying WANG ,  De-Shan KUO ,  Wen-Hung CHUANG ,  Tsun-Kai KO ,  Chia-Chen TSAI ,  Chyi-Yang SHEU ,  Chun-Chang CHEN

IPC: H01L33/24 ,  H01L33/38 ,  H01L33/20 ,  H01L33/32 ,  H01L33/06 ,  H01L33/08

CPC classification number: H01L33/20 ,  H01L33/38 ,  H01L33/387

Abstract: A light-emitting element, includes a substrate; a first light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, and wherein the triangular upper surface has three sides and three vertexes; a first electrode formed on the first light-emitting stack and located near a first side of the three sides of the triangular upper surface; and a second electrode formed on the first light-emitting stack; including a second electrode pad near a first vertex of the three vertexes; and a second electrode extending part extending from the second electrode pad in two directions, disposed along other two sides of the three sides to surround the first electrode and stopping at the first side to form an opening.

Abstract translation: 发光元件包括基板; 形成在基板上的第一发光叠层，包括平行于基板的三角形上表面，并且其中三角形上表面具有三个边和三个顶点; 第一电极，其形成在所述第一发光叠层上并且位于所述三角形上表面的三个边的第一侧附近; 和形成在第一发光叠层上的第二电极; 包括靠近所述三个顶点的第一顶点的第二电极垫; 以及从所述第二电极焊盘沿两个方向延伸的第二电极延伸部分，所述第二电极延伸部分沿着所述三个侧面的另外两个侧面设置以围绕所述第一电极并且在所述第一侧处停止形成开口。

公开(公告)号：US20210249558A1

公开(公告)日：2021-08-12

申请号：US17169057

申请日：2021-02-05

Applicant: EPISTAR CORPORATION

Inventor： Chia-Chen TSAI ,  Jia-Liang TU ,  Chi-Ling LEE

IPC: H01L33/00 ,  H01L21/683 ,  H01L21/66 ,  H01L25/075 ,  H01L33/62

Abstract: A manufacturing method for an LED includes: providing a substrate having an upper surface divided into a plurality of zones; a LED group formed on each of the zones and wherein: a plurality of the LED groups includes a first LED group; and the LEDs of the first LED group include a defective LED; forming a testing circuit on the substrate to electrically connect the LEDs; testing the first LED group by the testing circuit; recording a position of the defective LED; providing a carrier; and performing one of the following steps by the position of the defective LED: removing the defective LED from the substrate and then transferring the other LEDs in the first LED group to the carrier; transferring the other LEDs other than the defective LED in the first LED group to the carrier; or transferring the LEDs to the carrier and repairing it on the carrier.

公开(公告)号：US20150076536A1

公开(公告)日：2015-03-19

申请号：US14470396

申请日：2014-08-27

Applicant: Epistar Corporation

Inventor： Chen OU ,  Chun-Wei CHANG ,  Chih-Wei WU ,  Sheng-Chih WANG ,  Hsin-Mei TSAI ,  Chia-Chen TSAI ,  Chuan-Cheng CHANG

IPC: H01L27/15 ,  H01L33/42 ,  H01L33/20 ,  H01L33/38

CPC classification number: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, and a first trench between the first light-emitting structure and the second light-emitting structure, exposing the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein.

Abstract translation: 发光元件包括在第一半导体层上的第一半导体层，第一发光结构和第二发光结构，第一半导体层上的第一电极，第一发光结构上的第二电极， 以及在所述第一发光结构和所述第二发光结构之间的第一沟槽，暴露所述第一半导体层，其中所述第一沟槽没有形成在所述第一电极和所述第二电极中。

公开(公告)号：US20190252459A1

公开(公告)日：2019-08-15

申请号：US16390899

申请日：2019-04-22

Applicant: Epistar Corporation

Inventor： Chen OU ,  Chun-Wei CHANG ,  Chih-Wei WU ,  Sheng-Chih WANG ,  Hsin-Mei TSAI ,  Chia-Chen TSAI ,  Chuan-Cheng CHANG

IPC: H01L27/15

CPC classification number: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.

公开(公告)号：US20170365637A1

公开(公告)日：2017-12-21

申请号：US15675351

申请日：2017-08-11

Applicant: Epistar Corporation

Inventor： Chen OU ,  Chun-Wei CHANG ,  Chih-Wei WU ,  Sheng-Chih WANG ,  Hsin-Mei TSAI ,  Chia-Chen TSAI ,  Chuan-Cheng CHANG

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

CPC classification number: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.