公开(公告)号：US20180331256A1

公开(公告)日：2018-11-15

申请号：US15971367

申请日：2018-05-04

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Shou-Lung CHEN ,  Hsin-Kang CHEN

IPC: H01L33/10 ,  H01L33/60 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20

CPC classification number: H01L33/10 ,  H01L33/20 ,  H01L33/385 ,  H01L33/60 ,  H01L33/62 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/18305 ,  H01S5/18311 ,  H01S5/423 ,  H01S2301/176

Abstract: The present disclosure provides a semiconductor device including a first reflective structure, a second reflective structure and a cavity region between the first reflective structure and the second reflective structure. The cavity region includes a first surface, a second surface opposite to the first surface and a sidewall between the first surface and the second surface. The first surface is closer to the first reflective structure than the second reflective structure. The semiconductor device further includes a first electrode electrically connected to the first reflective structure. The semiconductor device further includes a second electrode electrically connected to the second reflective structure. The second electrode includes a pad portion and a side portion extending from the pad portion. The first electrode and the pad portion of the second electrode are on the first surface, and the side portion of the second electrode covers the sidewall of the cavity region.

公开(公告)号：US20210336079A1

公开(公告)日：2021-10-28

申请号：US17333611

申请日：2021-05-28

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Shou-Lung CHEN ,  Hsin-Kang CHEN

IPC: H01L33/10 ,  H01S5/042 ,  H01S5/42 ,  H01L33/20 ,  H01L33/60 ,  H01S5/02 ,  H01L33/62 ,  H01L33/38 ,  H01S5/183

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

公开(公告)号：US20230246125A1

公开(公告)日：2023-08-03

申请号：US18127484

申请日：2023-03-28

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Shou-Lung CHEN ,  Hsin-Kang CHEN

IPC: H01L33/10 ,  H01L33/60 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38 ,  H01S5/42 ,  H01S5/02 ,  H01S5/042

CPC classification number: H01L33/10 ,  H01L33/20 ,  H01L33/60 ,  H01L33/62 ,  H01L33/385 ,  H01S5/0216 ,  H01S5/423 ,  H01S5/0425 ,  H01S5/04254 ,  H01S5/04256 ,  H01S5/18311

Abstract: A semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.