公开(公告)号：US10535799B2

公开(公告)日：2020-01-14

申请号：US15971367

申请日：2018-05-04

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh Hsu ,  Yi-Wen Huang ,  Shou-Lung Chen ,  Hsin-Kang Chen

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/60 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38

Abstract: A semiconductor device includes a first reflective structure, a second reflective structure and a cavity region between the first reflective structure and the second reflective structure. The cavity region includes a first surface and a second surface opposite to the first surface. The semiconductor device further includes a first electrode on the first surface and electrically connected to the first reflective structure. The semiconductor device further includes a second electrode on the first surface and electrically connected to the second reflective structure. The semiconductor device further includes a first conductive layer on the second surface of the cavity region and including a hole formed therethrough.

公开(公告)号：US11024768B2

公开(公告)日：2021-06-01

申请号：US16709369

申请日：2019-12-10

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh Hsu ,  Yi-Wen Huang ,  Shou-Lung Chen ,  Hsin-Kang Chen

IPC: H01L33/10 ,  H01S5/02 ,  H01L33/60 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38 ,  H01S5/42 ,  H01S5/042 ,  H01S5/183

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.

公开(公告)号：US11699774B2

公开(公告)日：2023-07-11

申请号：US17333611

申请日：2021-05-28

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh Hsu ,  Yi-Wen Huang ,  Shou-Lung Chen ,  Hsin-Kang Chen

IPC: H01L33/10 ,  H01S5/42 ,  H01L33/60 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38 ,  H01S5/02 ,  H01S5/042 ,  H01S5/183

CPC classification number: H01L33/10 ,  H01L33/20 ,  H01L33/385 ,  H01L33/60 ,  H01L33/62 ,  H01S5/0216 ,  H01S5/0425 ,  H01S5/04254 ,  H01S5/04256 ,  H01S5/423 ,  H01S5/0217 ,  H01S5/04257 ,  H01S5/18305 ,  H01S5/18311 ,  H01S2301/176

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

公开(公告)号：US11251336B2

公开(公告)日：2022-02-15

申请号：US16725040

申请日：2019-12-23

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Kang Chen ,  Jung-Jen Li

IPC: H01L33/14 ,  H01L33/38 ,  H01L27/02 ,  H01L33/00 ,  H01L33/02

Abstract: A semiconductor device includes a semiconductor stack having a first-type semiconductor structure, an active structure, and a second-type semiconductor structure disposed on the first-type semiconductor structure. The second-type semiconductor structure has a doping concentration. A first portion includes a part of the first-type semiconductor structure, the active structure, and the second-type semiconductor structure, and has a current confining region. A second portion includes a part of the first-type semiconductor structure, the active structure, and the second-type semiconductor structure, and includes a first-type heavily doped region in the second-type semiconductor structure. The first-type heavily doped region includes a doping concentration higher than that of the second-type semiconductor structure.