公开(公告)号：US20250151460A1

公开(公告)日：2025-05-08

申请号：US18930694

申请日：2024-10-29

Applicant: EPISTAR CORPORATION

Inventor： Yung-Chung PAN ,  Ming-Pao CHEN ,  Peng-Ren CHEN

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: A semiconductor structure includes a first semiconductor stack having a first conductivity type, a second semiconductor stack having a second conductivity type, an active structure disposed between the first semiconductor stack and the second semiconductor stack, and an aluminum-containing cap layer in the active structure. The active structure includes a plurality of group III nitride barrier layers and a plurality of group III-nitride quantum well layers which are alternately stacked. The thickness of the group III-nitride barrier layers is ranged between 200 angstroms to 550 angstroms, and the aluminum-containing cap layer is disposed between the group III nitride quantum well layers and the group III nitride barrier layers, and the active structure has a wavelength of at least 600 nm.

公开(公告)号：US20190067516A1

公开(公告)日：2019-02-28

申请号：US16118063

申请日：2018-08-30

Applicant: EPISTAR CORPORATION

Inventor： Chun-Hsiang TU ,  De-Shan KUO ,  Peng-Ren CHEN

IPC: H01L33/12 ,  H01L33/18 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  H01L33/00

Abstract: The present disclosure provides a semiconductor device including a substrate, a first buffer structure and a semiconductor stack layer. The substrate includes a base part and a plurality of character parts connected to the base part. The first buffer structure is disposed on the base part and is separated from the plurality of character parts by at least one distance. The semiconductor stack layer is disposed on the first buffer structure and the plurality of character parts.

公开(公告)号：US20150243845A1

公开(公告)日：2015-08-27

申请号：US14191098

申请日：2014-02-26

Applicant: EPISTAR CORPORATION

Inventor： Peng-Ren CHEN ,  Wen-Ming TSAO ,  Chih-Chun KE

IPC: H01L33/32 ,  H01L33/06

CPC classification number: H01L33/325 ,  H01L33/06 ,  H01L33/32

Abstract: A light-emitting element comprises a light-emitting stacked structure. The light-emitting stacked structure comprises a first type semiconductor layer; an active layer on the first type semiconductor layer; a second type semiconductor layer on the active layer; and a superlattice structure between the active layer and the second type semiconductor layer, comprising a first doped nitride layer and a first undoped nitride layer on the first doped nitride layer.

Abstract translation: 发光元件包括发光层叠结构。 发光层叠结构包括第一类型半导体层; 在第一类型半导体层上的有源层; 在有源层上的第二类型半导体层; 以及有源层和第二类型半导体层之间的超晶格结构，包括在第一掺杂氮化物层上的第一掺杂氮化物层和第一未掺杂氮化物层。