公开(公告)号：US20230129560A1

公开(公告)日：2023-04-27

申请号：US17970437

申请日：2022-10-20

Applicant: EPISTAR CORPORATION

Inventor： Yao-Ru CHANG ,  Yi HSIAO ,  Sheng-Feng KUO ,  Wei-Chu LIAO ,  Shih-Chang LEE

IPC: H01L33/62 ,  H01L33/38

Abstract: A semiconductor device is provided, which includes an epitaxial structure, an electrode pad, and a contact region. The epitaxial structure includes a geometric center, a first surface and a second surface opposite to the first surface. The electrode pad is on the first surface. The contact region is on the second surface and includes a first group and a second group. The first group includes a plurality of first contact portions separated from each other and is arranged in a first ring shape. The second group includes a plurality of second contact portions separated from each other and is arranged in a second ring shape. A second distance between each of the plurality of second contact portions and the geometric center is greater than a first distance between each of the plurality of first contact portions and the geometric center.