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公开(公告)号：US20230023705A1
公开(公告)日：2023-01-26
申请号：US17871103
申请日：2022-07-22
Applicant: EPISTAR CORPORATION
Inventor： Chang-Hua HSIEH , Chia-Ming LIU , Chi-Hsiang YEH , Shuo-Wei CHEN , Yen-Kai YANG
IPC: H01L33/32
Abstract: A semiconductor device, includes: a first conductive type semiconductor region including a first semiconductor structure, wherein the first semiconductor structure includes one or more pairs of stack, the one or more pairs of stack respectively includes a first layer and a second layer, the first layer includes AlxGa1-xN, the second layer includes AlyGa1-yN, wherein 0≤x
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