公开(公告)号：US20170092806A1

公开(公告)日：2017-03-30

申请号：US15373073

申请日：2016-12-08

Applicant: EPISTAR CORPORATION

Inventor： Wen Hsiang LIN ,  Chang-Hua HSIEH

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

Abstract: A nitride-based semiconductor light-emitting device comprises a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region between the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; an un-doped AlGaN layer formed between the first semiconductor structure and the semiconductor buffer structure; and a substrate under the semiconductor buffer structure, wherein the semiconductor buffer structure comprises an un-doped first layer under the un-doped AlGaN layer, and an un-doped second layer between the un-doped first layer and the substrate, and wherein the thickness of the un-doped first layer is thicker than that of the un-doped second layer and the un-doped AlGaN layer.

公开(公告)号：US20140124734A1

公开(公告)日：2014-05-08

申请号：US14154149

申请日：2014-01-13

Applicant: EPISTAR CORPORATION

Inventor： Wen Hsiang LIN ,  Chang-Hua HSIEH

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

Abstract: A nitride-based semiconductor light-emitting device includes: a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region interposed the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped or unintentionally-doped AlGaN based layer formed between the first semiconductor structure and the semiconductor buffer structure.

Abstract translation: 一种氮化物系半导体发光装置，具备：具有第一导电性的第一半导体结构，具有第二导电性的第二半导体结构的发光叠层和插入所述第一半导体结构和所述第二半导体结构的有源区; 形成在所述第一半导体结构下的半导体缓冲结构; 以及形成在第一半导体结构和半导体缓冲结构之间的未掺杂或无意掺杂的AlGaN基层。