公开(公告)号：AU2002357931A1

公开(公告)日：2003-07-24

申请号：AU2002357931

申请日：2002-12-20

Applicant: EXTREME DEVICES INC

Inventor： SCHUELLER RANDOLPH D ,  HONG CHARLIE C

IPC: H01J3/02 ,  H01J9/02 ,  H01J3/00

Abstract: A field emission device having emitter tips and a support layer for a gate electrode is provided. Openings in the support layer and the gate layer are sized to provide mechanical support for the gate electrode. Cavities may be formed and mechanically supported by walls between cavities or columns within a cavity. Dielectric layers having openings of different sizes between the emission tips and the gate electrode can decrease leakage current between emitter tips and the gate layer. The emitter tips may comprise a carbon-based material. The device can be formed using processing operations similar to those used in conventional semiconductor device manufacturing.

公开(公告)号：AU2002357931A8

公开(公告)日：2003-07-24

申请号：AU2002357931

申请日：2002-12-20

Applicant: EXTREME DEVICES INC

Inventor： HONG CHARLIE C ,  SCHUELLER RANDOLPH D

IPC: H01J3/02 ,  H01J9/02

Abstract: A field emission device having emitter tips and a support layer for a gate electrode is provided. Openings in the support layer and the gate layer are sized to provide mechanical support for the gate electrode. Cavities may be formed and mechanically supported by walls between cavities or columns within a cavity. Dielectric layers having openings of different sizes between the emission tips and the gate electrode can decrease leakage current between emitter tips and the gate layer. The emitter tips may comprise a carbon-based material. The device can be formed using processing operations similar to those used in conventional semiconductor device manufacturing.

公开(公告)号：WO03058668A3

公开(公告)日：2003-09-04

申请号：PCT/US0240764

申请日：2002-12-20

Applicant: EXTREME DEVICES INC

Inventor： SCHUELLER RANDOLPH D ,  HONG CHARLIE C

IPC: H01J3/02 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J3/022

Abstract: A field emission device having emitter tips and a support layer for a gate electrode is provided. Openings in the support layer and the gate layer are sized to provide mechanical support for the gate electrode. Cavities may be formed and mechanically supported by walls between cavities or columns within cavity. Dielectric layers having openings of different sizes between the emission tips and the gate electrode can decrease leakage current between emitter tips and the gate layer. The emitter tips may comprise a carbon-based material. The device can be formed using processing operations similar to those used in conventional semiconductor device manufacturing.

Abstract translation: 提供具有发射极尖端和栅电极用支撑层的场致发射器件。 支撑层和栅极层中的开口的尺寸设置成为栅电极提供机械支撑。 腔可以形成并且由空腔内的腔或柱之间的壁机械地支撑。 在发射尖端和栅电极之间具有不同尺寸的开口的电介质层可以减小发射极尖端与栅极层之间的漏电流。 发射极尖端可以包括碳基材料。 可以使用与常规半导体器件制造中使用的那些类似的处理操作来形成器件。