SEGMENTED GATE DRIVE FOR DYNAMIC BEAM SHAPE CORRECTION IN FIELD EMISSION CATHODES

    公开(公告)号:CA2396164A1

    公开(公告)日:2001-07-12

    申请号:CA2396164

    申请日:2000-12-28

    Abstract: A field emission cathode providing for dynamic adjustment of beam shape is disclosed. Beam shape adjustment is accomplished by segmenting the gate electrode (17) of a gated field emission cathode and independently driving t he various gate segments to form the desired beam shape. Segments can be turned on and off as the beam is deflected allowing the dynamic correction of aberrations in the beam. A focus lens (32) can be placed on the gated cathod e to produce a parallel electron beam. In addition, a hollow cathode can be produced to minimize space charge repulsion in a beam.

    Segmented gate drive for dynamic beam shape correction in field emission cathodes

    公开(公告)号:AU2461901A

    公开(公告)日:2001-07-16

    申请号:AU2461901

    申请日:2000-12-28

    Abstract: A field emission cathode providing for dynamic adjustment of beam shape is disclosed. Beam shape adjustment is accomplished by segmenting the gate electrode of a gated field emission cathode and independently driving the various gate segments to form the desired beam shape. Segments can be turned on and off as the beam is deflected allowing dynamic correction of aberrations in the beam. A focus lens can be placed on the gated cathode to produce a parallel electron beam. In addition, a hollow cathode can be produced to minimize space charge repulsion in a beam.

    Multilayer carbon-based field emission electron device for high current density applications

    公开(公告)号:AU7753000A

    公开(公告)日:2002-04-15

    申请号:AU7753000

    申请日:2000-10-04

    Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device.

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