公开(公告)号：US20140159050A1

公开(公告)日：2014-06-12

申请号：US13935096

申请日：2013-07-03

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyung Sup YOON ,  Byoung-Gue Min ,  Jong-Won Lim ,  Hokyun Ahn ,  Seong-ll Kim ,  Sang-Heung Lee ,  Dong Min Kang ,  Chull Won Ju ,  Jae Kyoung Mun

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/66462 ,  H01L21/02118 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/0254 ,  H01L21/28264 ,  H01L21/28593 ,  H01L21/31111 ,  H01L21/31144 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/778 ,  H01L29/7786

Abstract: A field effect transistor is provided. The field effect transistor may include a capping layer on a substrate, a source ohmic electrode and a drain ohmic electrode on the capping layer, a first insulating layer and a second insulating layer stacked on the capping layer to cover the source and drain ohmic electrodes, a Γ-shaped gate electrode including a leg portion and a head portion, the leg portion being connected to the substrate between the source ohmic electrode and the drain ohmic electrode, and the head portion extending from the leg portion to cover a top surface of the second insulating layer, a first planarization layer on the second insulating layer to cover the Γ-shaped gate electrode, and a first electrode on the first planarization layer, the first electrode being connected to the source ohmic electrode or the drain ohmic electrode.

Abstract translation: 提供场效应晶体管。 场效应晶体管可以包括衬底上的覆盖层，覆盖层上的源欧姆电极和漏极欧姆电极，堆叠在覆盖层上以覆盖源极和漏极欧姆电极的第一绝缘层和第二绝缘层， 包括脚部和头部的栅格电极，所述脚部分连接到所述源欧姆电极和所述漏极欧姆电极之间的衬底，并且所述头部从所述腿部延伸以覆盖所述源极欧姆电极和所述漏极欧姆电极的顶表面 所述第二绝缘层，在所述第二绝缘层上覆盖所述栅格电极的第一平坦化层和所述第一平坦化层上的第一电极，所述第一电极连接到所述源欧姆电极或所述漏极欧姆电极。