公开(公告)号：US20140034981A1

公开(公告)日：2014-02-06

申请号：US13956746

申请日：2013-08-01

Applicant: Epistar Corporation

Inventor： Kuo-Hsin HUNG ,  Ting-Yu CHEN ,  Chen OU

IPC: H01L33/46

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode structure has: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with electrical polarity different from that of the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode comprises a contact area and an extension area, and the contact area has a first surface corresponding to the first semiconductor layer and the extension area has a second surface corresponding to the first semiconductor layer, wherein a roughness of the first surface is different from that of the second surface, and the reflectivity of the first surface is smaller than that of the second surface.

Abstract translation: 发光二极管结构具有：基板; 在所述基板上的发光半导体堆叠，其中所述发光半导体堆叠包括第一半导体层，具有与所述第一半导体层的极性不同的电极性的第二半导体层，以及所述第一半导体层之间的发光层 和第二半导体层; 电连接到第一半导体层的第一电极; 以及与所述第二半导体层电连接的第二电极，其中所述第一电极包括接触区域和延伸区域，并且所述接触区域具有对应于所述第一半导体层的第一表面，并且所述延伸区域具有对应于所述第二半导体层的第二表面 第一半导体层，其中第一表面的粗糙度不同于第二表面的粗糙度，并且第一表面的反射率小于第二表面的反射率。