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    2.
    发明专利
    未知

    公开(公告)号：DE69820562D1

    公开(公告)日：2004-01-29

    申请号：DE69820562

    申请日：1998-06-12

    Applicant: FRANCE TELECOM

    Inventor： MONGET CEDRIC ,  VALLON SOPHIE ,  JOUBERT OLIVIER

    IPC: H01L21/302 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/3213

    Abstract: The process for etching a polycrystalline Si1-xGex layer or a stack includes a polycrystalline Si1-xGex layer and of a polycrystalline Si layer, deposited on a substrate and including, at its surface, a mask of inorganic material, includes main etching step in which the said layer or the said stack is anisotropically etched, using the said mask, by means of a high-density gas plasma of a gas mixture consisting of chlorine (Cl2) and of either nitrogen (N2) or ammonia (NH3) or of a nitrogen/ammonia mixture.

    3.
    发明专利
    未知

    公开(公告)号：FR2765393B1

    公开(公告)日：2001-11-30

    申请号：FR9707940

    申请日：1997-06-25

    Applicant: FRANCE TELECOM

    Inventor： MONGET CEDRIC ,  VALLON SOPHIE ,  JOUBERT OLIVIER

    IPC: H01L21/302 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/3213

    Abstract: The process for etching a polycrystalline Si1-xGex layer or a stack includes a polycrystalline Si1-xGex layer and of a polycrystalline Si layer, deposited on a substrate and including, at its surface, a mask of inorganic material, includes main etching step in which the said layer or the said stack is anisotropically etched, using the said mask, by means of a high-density gas plasma of a gas mixture consisting of chlorine (Cl2) and of either nitrogen (N2) or ammonia (NH3) or of a nitrogen/ammonia mixture.

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