公开(公告)号：AT547743T

公开(公告)日：2012-03-15

申请号：AT08004849

申请日：2008-03-14

Applicant: FUJIFILM CORP

Inventor： SATO KENICHIRO ,  SUGIMOTO NAOYA

IPC: G03F7/023 ,  G03F7/039 ,  H01L21/00

Abstract: A photosensitive resin composition includes (a) a resin comprising a repeating unit represented by a following formula (1); (b) a photosensitive agent; (c) a thermo-acid generator; and (d) a compound having at least one of an alkoxymethyl group and an acyloxymethyl group, wherein R 1 represents a divalent to octavalent organic group containing 2 or more carbon atoms, R 2 represents a divalent to hexavalent organic group containing 2 or more carbon atoms, each of R 0 and R 3 independently represents a hydrogen atom or an organic group containing 1 to 20 carbon atoms, m represents an integer of 0 to 2, and each of p and q represents an integer of 0 to 4, provided that p + q > 0.

公开(公告)号：JP2010039035A

公开(公告)日：2010-02-18

申请号：JP2008199431

申请日：2008-08-01

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： NISHIKAWA NAOYUKI ,  YOSHIDA YUKO ,  SUGIMOTO NAOYA ,  TARUYA SHINJI ,  TSUCHIMURA TOMOTAKA ,  SHIMADA KAZUTO ,  KAMIMURA SATOSHI

IPC: G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a surface treatment agent and a resist composition for a freezing process being applied to the first resist pattern in a double patterning method and satisfying the requirements for preventing line width and LWR of the first resist pattern from fluctuating due to the freezing process and the formation of the second resist pattern and resist composition and to provide a pattern formation process by use of them. SOLUTION: This surface treatment agent for forming the resist pattern contains a compound having two nucleophilic functional groups or more in one molecule or its salt and solvent. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种表面处理剂和用于冷冻处理的抗蚀剂组合物，其以双重图案化方法施加到第一抗蚀剂图案，并且满足防止第一抗蚀剂图案的线宽度和LWR的要求 由于冷冻过程和第二抗蚀剂图案和抗蚀剂组合物的形成而波动，并且通过使用它们提供图案形成过程。 解决方案：用于形成抗蚀剂图案的该表面处理剂包含在一个分子中具有两个亲核官能团或更多的化合物或其盐和溶剂。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008107809A

公开(公告)日：2008-05-08

申请号：JP2007243533

申请日：2007-09-20

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： SUGIMOTO NAOYA ,  NISHIYAMA FUMIYUKI

IPC: G03F7/039 ,  C08F20/18 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To solve problems of a performance improving technique in microfabrication of a semiconductor element using actinic rays or radiation, particularly KrF excimer laser light or EUV light, and to provide a positive resist composition giving a good side lobe margin. SOLUTION: The positive resist composition comprises: (A) a resin containing a repeating unit having a secondary benzyl structure in a side chain; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; and (C) a tertiary amine compound. A pattern forming method using the same is also provided. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了解决使用光化射线或辐射，特别是KrF准分子激光或EUV光的半导体元件的微细加工中的性能改进技术的问题，并且提供具有良好的旁瓣余量的正光刻胶组合物 。 解决方案：正型抗蚀剂组合物包含：（A）含有侧链具有仲苄基结构的重复单元的树脂; （B）能够在用光化射线或辐射照射时能够产生酸的化合物; 和（C）叔胺化合物。 还提供了使用该图案形成方法的图案形成方法。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007272194A

公开(公告)日：2007-10-18

申请号：JP2007012723

申请日：2007-01-23

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KODAMA KUNIHIKO ,  YAMAMOTO KEI ,  TAKAHASHI AKIRA ,  SUGIMOTO NAOYA

IPC: G03F7/039 ,  C08F220/18 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To solve the problems of a performance improving technique in the microfabrication of a semiconductor element using an actinic ray or radiation, and to provide a positive photosensitive composition which is improved in pattern collapse, ensures few development defects and excels in various performances such as resolution, isolated DOF and PEB temperature dependency, even in the formation of a fine pattern of ≤100 nm, and a method of forming a pattern using the same. SOLUTION: The positive photosensitive composition includes: a resin whose dissolution rate in an alkaline developing solution increases by the action of an acid, the resin containing a specific acid decomposable repeating unit and a specific acid nondecomposable repeating unit; and a compound capable of generating an acid upon irradiation with an actinic ray or radiation. The method of forming a pattern using the same is also provided. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题为了解决使用光化射线或辐射的半导体元件的微细加工中的性能改进技术的问题，并且提供改进了图案崩溃的正性感光性组合物，确保了很少的显影缺陷和 在分辨率，隔离DOF和PEB温度依赖性等各种性能方面，甚至在形成≤100nm的精细图案时也是优异的，以及使用其形成图案的方法。 正型感光性组合物包括：通过酸的作用使碱性显影液中的溶解速度增加的树脂，含有特定酸分解性重复单元的树脂和特定酸不可分解重复单元的树脂; 以及能够在用光化射线或辐射照射时能够产生酸的化合物。 还提供了使用其形成图案的方法。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2009271259A

公开(公告)日：2009-11-19

申请号：JP2008120627

申请日：2008-05-02

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TARUYA SHINJI ,  TSUBAKI HIDEAKI ,  SUGIMOTO NAOYA

IPC: G03F7/40 ,  H01L21/027

CPC classification number: G03F7/40 ,  G03F7/0035 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041

Abstract: PROBLEM TO BE SOLVED: To provide a surface treating agent for a resist pattern suitable for a freezing process, in which properties of a first resist pattern can be modified in a double patterning method such that the first resist pattern does not dissolve in a resist liquid or a developer used for forming a second resist pattern and that changes in the width, line width ratio (LWR) and height of the first pattern are suppressed even after the second resist patter is formed, and to provide a method of forming a resist pattern by using the surface treating agent. SOLUTION: The surface treating agent for a resist pattern contains a chemical species having a polymerizable group and a functional group that chemically adsorbs to a resist pattern, and a solvent. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供适用于冷冻处理的抗蚀剂图案的表面处理剂，其中第一抗蚀剂图案的性质可以以双重图案化方法进行改性，使得第一抗蚀剂图案不溶解 用于形成第二抗蚀剂图案的抗蚀剂液体或显影剂，即使在形成第二抗蚀剂图案之后也抑制了第一图案的宽度，线宽比（LWR）和高度的变化，并且提供了形成 通过使用表面处理剂的抗蚀剂图案。 解决方案：抗蚀剂图案的表面处理剂包含具有可聚合基团和化学吸附到抗蚀剂图案的官能团的化学物质和溶剂。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009037201A

公开(公告)日：2009-02-19

申请号：JP2008066748

申请日：2008-03-14

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： SATO KENICHIRO ,  SUGIMOTO NAOYA

IPC: G03F7/039 ,  C08G69/26 ,  G03F7/004 ,  G03F7/023 ,  G03F7/40

CPC classification number: G03F7/0233 ,  G03F7/0392 ,  G03F7/0751 ,  G03F7/40 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide: a photosensitive resin composition having excellent lithography performance and capable of forming a cured relief pattern excellent in mechanical characteristics and heat resistance through low-temperature curing; a cured relief pattern production method using the photosensitive resin composition; and a semiconductor device including a cured relief pattern obtained by the production method. SOLUTION: The photosensitive resin composition comprises a resin comprising a specific repeating unit, a photosensitive agent, a thermo-acid generator, and a compound having at least one of an alkoxymethyl group and an acyloxymethyl group. There are also provided: the cured relief pattern production method using the photosensitive resin composition; and the semiconductor device including a cured relief pattern obtained by the production method. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供：具有优异的光刻性能并且能够通过低温固化形成机械特性和耐热性优异的固化浮雕图案的感光性树脂组合物; 使用该感光性树脂组合物的固化浮雕图案的制造方法; 以及包括通过制造方法获得的固化浮雕图案的半导体器件。 光敏树脂组合物包含具有特定重复单元的树脂，光敏剂，热酸产生剂和具有烷氧基甲基和酰氧基甲基中至少一个的化合物。 还提供：使用感光性树脂组合物的固化浮雕图案的制造方法; 并且该半导体器件包括通过该制造方法获得的固化浮雕图案。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007193013A

公开(公告)日：2007-08-02

申请号：JP2006010122

申请日：2006-01-18

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TAKAHASHI AKIRA ,  SUGIMOTO NAOYA

IPC: G03F7/039 ,  C08F220/18 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a positive resist composition for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes and a pattern forming method using the same, which are a positive resist composition improved in line edge roughness, PEB temperature dependency and profile and a pattern forming method using the same. SOLUTION: The positive resist composition contains (A) a resin having a specific repeating unit (A1) and a specific repeating unit (A2) and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation. The pattern forming method using the same is also provided. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供用于诸如IC的半导体的制造过程中的正性抗蚀剂组合物，在制造液晶，热敏头等的电路基板或其它光制造工艺中，以及 使用该图案形成方法，其是线边缘粗糙度，PEB温度依赖性和轮廓改善的正性抗蚀剂组合物和使用其的图案形成方法。 解决方案：正型抗蚀剂组合物包含（A）具有特定重复单元（A1）和特定重复单元（A2）的树脂和（B）在用光化射线或辐射照射时能够产生酸的化合物 。 还提供了使用该图案形成方法的图案形成方法。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2009294264A

公开(公告)日：2009-12-17

申请号：JP2008145152

申请日：2008-06-02

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TSUBAKI HIDEAKI ,  SUGIMOTO NAOYA

IPC: G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a new surface treating agent for a freezing process, with which, in a freezing process, the height of a first resist pattern does not change upon surface treatment and the formation of a second resist pattern, and the line width roughness (LWR) of the first resist pattern does not change even after surface treatment and the formation of the second resist pattern, and to provide a pattern forming method using the same. SOLUTION: The surface treating agent for pattern formation contains a compound having an aziridinyl group. The pattern forming method uses the surface treating agent. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于冷冻过程的新型表面处理剂，在冷冻过程中，第一抗蚀剂图案的高度在表面处理和第二抗蚀剂图案的形成时不会改变， 并且即使在表面处理和第二抗蚀剂图案的形成之后，第一抗蚀剂图案的线宽粗糙度（LWR）也不变化，并且提供使用其的图案形成方法。 解决方案：用于图案形成的表面处理剂含有具有吖丙啶基的化合物。 图案形成方法使用表面处理剂。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008224970A

公开(公告)日：2008-09-25

申请号：JP2007062115

申请日：2007-03-12

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： SATO KENICHIRO ,  YAMANAKA TSUKASA ,  SUGIMOTO NAOYA

IPC: G03F7/039 ,  C08G73/22 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photosensitive resin composition having excellent lithography performance and stability and capable of forming a cured relief pattern excellent in mechanical characteristics, heat resistance and adhesion to a substrate by low-temperature cure, a method for producing a cured relief pattern using the photosensitive resin composition, and a semiconductor device including a cured relief pattern obtained by using the method. SOLUTION: The photosensitive resin composition comprises a polybenzoxazole precursor, a photosensitizing agent and a compound having an oxetane group. There are also provided the method for producing a cured relief pattern using the photosensitive resin composition, and a semiconductor device including a cured relief pattern obtained by using the method. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决方案：提供一种光刻性能和稳定性优异的感光性树脂组合物，其能够通过低温固化形成机械特性，耐热性和对基材的粘合性优异的固化浮雕图案，其制造方法 使用该感光性树脂组合物的固化浮雕图案，以及包含使用该方法得到的固化浮雕图案的半导体装置。 光敏树脂组合物包含聚苯并恶唑前体，光敏剂和具有氧杂环丁烷基团的化合物。 还提供了使用该感光性树脂组合物制造固化浮雕图案的方法，以及包括通过使用该方法获得的固化浮雕图案的半导体器件。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2010072473A

公开(公告)日：2010-04-02

申请号：JP2008241470

申请日：2008-09-19

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KAMIMURA SATOSHI ,  TARUYA SHINJI ,  SUGIMOTO NAOYA

IPC: G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a surface treatment agent for a freezing process satisfying the following requirements: (1) a line width of a first resist pattern is not changed; and (2) a line edge roughness (LER) of the first resist pattern is not deteriorated, by freezing treatment, in the freezing process to be applied to the first resist pattern in a double patterning method, and to provide a pattern forming method using the same. SOLUTION: This surface treatment agent for forming the resist pattern contains a compound having a carbodiimide group. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种满足以下要求的用于冷冻处理的表面处理剂：（1）第一抗蚀剂图案的线宽度不改变; 和（2）通过在双重图案化方法中施加到第一抗蚀剂图案的冷冻处理中的第一抗蚀剂图案的线边缘粗糙度（LER）不劣化，并且提供使用 一样。 该溶液形成用表面处理剂含有具有碳二亚胺基的化合物。 版权所有（C）2010，JPO＆INPIT