-
公开(公告)号：KR20200132943A
公开(公告)日：2020-11-25
申请号：KR20207029563
申请日：2019-04-15
Applicant: FUJIFILM CORP
Inventor： YAMASHITA KOSUKE , SHIMADA KAZUTO
Abstract: 적어도 1종의필러를포함하고, 열확산율이 5.0×10-7m2s-1 이상이며, 체적저항율이 1.0×1011Ω·cm 이상인도열층을사용한다. 또한, 본발명은, 이도열층을응용한감광층, 감광성조성물, 도열층의제조방법, 및적층체와반도체디바이스에관한것이다.
-
公开(公告)号：EP3040450A4
公开(公告)日：2016-08-31
申请号：EP14839465
申请日：2014-08-21
Applicant: FUJIFILM CORP
Inventor： YAMASHITA KOSUKE
CPC classification number: C25D1/20 , C25D1/006 , C25D1/10 , C25D3/38 , C25D11/045 , C25D11/20 , C25D11/24 , G01R1/06 , H01L24/27 , H01R12/7076 , H01R2201/20 , H05K3/32 , H05K2203/162
-
3.发明专利Insulating substrate and wiring substrate, semiconductor package and led package each using the insulating substrate 审中-公开绝缘基板和导线基板，半导体封装和使用绝缘基板的LED封装
公开(公告)号：JP2012201891A
公开(公告)日：2012-10-22
申请号：JP2011064650
申请日：2011-03-23
Applicant: Fujifilm Corp , 富士フイルム株式会社
Inventor： YAMASHITA KOSUKE , HOTTA YOSHINORI
CPC classification number: H01L2224/48091 , H01L2224/8592 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide an insulating substrate that provides a semiconductor package and an LED package excellent in all of insulation and heat dissipation, and a wiring substrate, a semiconductor package, and an LED package each using the insulating substrate.SOLUTION: The insulating substrate 1 includes an aluminum substrate 2 and an insulating layer 3 provided at least a part of the surface of the aluminum substrate 2, wherein the insulating layer 3 is an anodized coating of aluminum. The anodized coating includes an insulating region A with a film thickness (T) of 20 nm-80 μm and an insulating region B with a film thickness (T) of 2-1,000 μm, and a ratio (TT) of the film thickness of the insulating region A to the film thickness of the insulating region B is 2-2,000.
Abstract translation: 要解决的问题：提供一种绝缘基板，其提供绝缘和散热全部优异的半导体封装和LED封装，以及各自使用绝缘基板的布线基板，半导体封装和LED封装。 解决方案：绝缘基板1包括铝基板2和设置在铝基板2的表面的至少一部分上的绝缘层3，其中绝缘层3是铝的阳极氧化涂层。 阳极氧化涂层包括具有20nm-80μm的膜厚度（T
A ）的绝缘区域A和膜厚度（T B ），以及比例（T B / T A ） 绝缘区域A的膜厚与绝缘区域B的膜厚度为2-2000。 版权所有（C）2013，JPO＆INPIT -
公开(公告)号：JP2011202194A
公开(公告)日：2011-10-13
申请号：JP2010067757
申请日：2010-03-24
Applicant: Fujifilm Corp , 富士フイルム株式会社
Inventor： YAMASHITA KOSUKE , HATANAKA YUSUKE , HOTTA YOSHINORI
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a metal filling fine structure having high filling factor of a metal to micropores provided in an insulating base material and preventing the occurrence of warpage of the fine structure due to the residual stress accompanying the filling of the metal.SOLUTION: The method of manufacturing a metal filling fine structure has: a step of filling the metal into through-holes in the insulating base material provided with the through-holes 101, 102 and the like having 10-5,000 nm average opening diameter, 10-1,000 μm average depth and 1×10-1×10/mmdensity by electroplating so that the virtual filling factor of the metal to the through-holes is larger than 100%; and a step of removing the metal stuck to the surface of the insulating base material, wherein the electroplating is carried out so that the difference of the crystal particle diameter of the metal filled into the inside of the through-holes and the crystal particle diameter of the metal stuck to the surface of the insulating base material is controlled to ≤20 nm.
Abstract translation: 要解决的问题：提供一种制造具有填充因子的金属填充精细结构的方法，所述金属填充精细结构具有设置在绝缘基材中的金属到微孔的填充因子，并且防止由于伴随填充的残余应力而引起的微细结构的翘曲 金属制造方法。制造金属填充精细结构的方法具有以下步骤：将金属填充到设置有具有10-5,000nm平均开口的通孔101,102等的绝缘基材中的通孔中 直径10-1,000μm平均深度和1×10-1×10 / mm的电镀密度，使金属对通孔的虚拟填充系数大于100％; 以及去除粘附到绝缘基材表面的金属的步骤，其中进行电镀，使得填充到通孔内部的金属的结晶粒径与晶体粒径之差 粘附到绝缘基材表面的金属被控制为≤20nm。
-
公开(公告)号：JP2012089481A
公开(公告)日：2012-05-10
申请号：JP2011205737
申请日：2011-09-21
Applicant: Fujifilm Corp , 富士フイルム株式会社
Inventor： YAMASHITA KOSUKE , HOTTA YOSHINORI , UESUGI AKIO
CPC classification number: H01R43/007 , C25D1/006 , C25D3/12 , C25D3/38 , C25D11/04 , C25D11/045 , C25D11/08 , C25D11/12 , C25D11/20 , C25D11/24 , H01R13/2414
Abstract: PROBLEM TO BE SOLVED: To provide an anisotropic conductive member that significantly increases the installation density of conductive paths, suppresses the formation of defect regions in conductive paths, and can be used as an electrically connecting member, an inspection connector or the like for electronic components such as semiconductor devices even today when still higher levels of integration is achieved.SOLUTION: In an anisotropic conductive member 1, a plurality of conductive paths 3 comprising a conductive material filled in through-holes are provided in an insulating base material 2 having the through-holes such that the conductive paths penetrate through the insulating base material in the thickness direction in a state where the conductive paths are insulated from one another, while one end of each of the conductive paths is exposed on one face of the insulating base material, and the other end of each of the conductive paths is exposed on the other face of the insulating base material. The insulating base material is an anodic oxide film obtained from an aluminum substrate and the aluminum substrate contains an intermetallic compound having an average circle equivalent diameter of 2 μm or less and a density of 100 pieces/mmor less.
Abstract translation: 要解决的问题：为了提供显着增加导电路径的安装密度的各向异性导电构件，抑制导电路径中的缺陷区域的形成，并且可以用作电连接构件，检查连接器等 对于诸如半导体器件之类的电子部件，即使在今天仍然具有更高的集成度的情况下也是如此。 解决方案：在各向异性导电构件1中，包括填充有通孔的导电材料的多个导电路径3设置在具有通孔的绝缘基材2中，使得导电路径穿过绝缘基底 在导电路径彼此绝缘的状态下，厚度方向上的材料在每个导电路径的一端暴露在绝缘基材的一个面上，并且每个导电路径的另一端露出 在绝缘基材的另一面上。 绝缘基材是由铝基板得到的阳极氧化膜，铝基板含有平均圆当量直径为2μm以下，密度为100个/ mm 2以上的金属间化合物 或更少。 版权所有（C）2012，JPO＆INPIT
-
Patent Agency Ranking
公开(公告)号：JP2014082447A
公开(公告)日：2014-05-08
申请号：JP2013103819
申请日：2013-05-16
Applicant: Fujifilm Corp , 富士フイルム株式会社
Inventor： YAMASHITA KOSUKE
CPC classification number: H05K1/0204 , H01L23/142 , H01L23/3677 , H01L23/3733 , H01L23/49827 , H01L2224/16225 , H01L2225/06589 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1461 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To improve heat radiation performance of a semiconductor package manufactured by using an anisotropic conductive member.SOLUTION: A multilayer substrate includes: an anisotropic conductive member including an insulation base material which is an anodic oxidation coating of an aluminium substrate and is provided with through holes formed in a thickness direction and multiple conduction passages which are made of a conductive material filling the through holes and penetrate through the insulation base material in the thickness direction while being insulated from each other; a heat conduction layer having a heat conduction part provided on at least one surface of the anisotropic conductive member; and a heat radiation part protruding from the insulation base material and made of the conductive material.
Abstract translation: 要解决的问题：提高通过使用各向异性导电构件制造的半导体封装的散热性能。解决方案：多层基板包括：各向异性导电构件，其包括作为铝基板的阳极氧化涂层的绝缘基材，并且是 设置有沿厚度方向形成的通孔和由导电材料制成的多个传导通道，该导电材料填充通孔并在彼此绝缘的同时在厚度方向上穿透绝缘基材; 具有设置在所述各向异性导电构件的至少一个表面上的导热部的导热层; 以及从绝缘基材突出并由导电材料制成的散热部。
-
公开(公告)号：JP2012201915A
公开(公告)日：2012-10-22
申请号：JP2011066233
申请日：2011-03-24
Applicant: Fujifilm Corp , 富士フイルム株式会社
Inventor： YAMASHITA KOSUKE , HOTTA YOSHINORI
IPC: C25D11/20
Abstract: PROBLEM TO BE SOLVED: To provide a metal-filled structure that is an anisotropic conductive member excellent in light transmissivity or excellent in heat transfer properties and heat dissipation properties and that is applicable to various applications.SOLUTION: The metal-filled structure includes: a portion having a through-hole A penetrating in the thickness direction with an average diameter of 10-1,000 nm; and a portion having a through-hole B penetrating in the thickness direction with an average diameter of 100 nm-1 mm, in a structure comprising an inorganic insulating substrate, wherein the ratio of the average diameter of the through-hole A to the average diameter of the through-hole B is 5 or more, the density of the through-hole A is 1×10to 1×10pieces/mm, the depth of the through-hole A is 50-1,000 μm, and a part of or all of any one of the through-hole A and the through-hole B or a part of or all of both of the through-hole A and the through-hole B are filled with metal.
Abstract translation: 要解决的问题：提供一种金属填充结构，其是具有优异的透光性或优异的传热性能和散热性能的各向异性导电构件，并且可应用于各种应用。 解决方案：金属填充结构包括：具有贯穿厚度方向的平均直径为10-1000nm的通孔A的部分; 在具有无机绝缘基板的结构中，具有在厚度方向上贯穿平均直径为100nm-1mm的通孔B的部分，其中通孔A的平均直径与平均直径之比 通孔B的直径为5以上，通孔A的密度为1×10
6 〜1×10 10 件/ mm 2 ，通孔A的深度为50-1,000μm，并且通孔A中的任一个的一部分或全部 并且通孔B或者通孔A和通孔B中的一部分或全部被金属填充。 版权所有（C）2013，JPO＆INPIT -
公开(公告)号：JP2013069629A
公开(公告)日：2013-04-18
申请号：JP2011209057
申请日：2011-09-26
Applicant: Fujifilm Corp , 富士フイルム株式会社
Inventor： HOTTA YOSHINORI , YAMASHITA KOSUKE
Abstract: PROBLEM TO BE SOLVED: To provide an anisotropic conductive member which is excellent in uniformity in height at a protrusion portion of a conductive path with a resistance change rate being low, and its manufacturing method.SOLUTION: In an insulating base material, a plurality of conductive paths made from conductive member are provided in such a manner as penetrates the insulating base material in thickness direction while insulated from each other, with one end of each conductive path being protruding from one surface of the insulating base material while the other end being protruding from the other surface of the insulating base material. The density of the conductive path is 2,000,000/mmor higher. The insulating base material is such an anisotropic conductive member as made from a positive electrode oxide film of aluminium substrate containing micropore, with a ratio (protruding part/penetrating part) of average diameter at a portion protruding from the surface of an insulating layer base material at the conductive path and average diameter at a portion penetrating the insulating layer base material at the conductive path, being 1.05 or higher.
Abstract translation: 要解决的问题：提供一种电阻变化率低的导电路径的突出部分的高度均匀性优异的各向异性导电构件及其制造方法。 解决方案：在绝缘基材中，由导电构件制成的多个导电路径以彼此绝缘彼此绝缘的方式设置成在厚度方向上穿透绝缘基材，每个导电路径的一端突出 从绝缘基材的一个表面开始，另一端从绝缘基材的另一个表面突出。 导电路径的密度为2,000,000 / mm
2 或更高。 绝缘基材是由含有微孔的铝基板的正极氧化物膜构成的各向异性导电构件，在绝缘层基材的表面突出的部分具有平均直径的比例（突出部/贯通部） 在导电路径处，在导电路径处穿过绝缘层基材的部分的平均直径为1.05或更高。 版权所有（C）2013，JPO＆INPIT -
公开(公告)号：JP2012009146A
公开(公告)日：2012-01-12
申请号：JP2010141260
申请日：2010-06-22
Applicant: Fujifilm Corp , 富士フイルム株式会社
Inventor： YAMASHITA KOSUKE , HATANAKA YUSUKE
CPC classification number: C25D1/006 , C25D11/045 , C25D11/20 , C25D11/26 , C25D11/30 , H01L21/486 , H01L23/49827 , H01L24/29 , H01L2224/29 , H01L2224/29298 , H01L2224/83101 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01057 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01R12/52 , H05K3/32 , H05K2201/10378 , H05K2203/0315 , Y10T428/249953 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
Abstract: PROBLEM TO BE SOLVED: To obtain a microstructure which can provide an anisotropic conductive member capable of minimizing poor wiring, and to provide a method of manufacturing the same.SOLUTION: In the microstructure where through holes provided in an insulating substrate are filled with a metal and an insulating material, density of the through holes in the insulating substrate is 1×10-1×10/mm, average opening diameter of the through holes is 10-5000 nm, average depth of the through holes is 10-1000 μm, sealing rate of the through holes only by the metal is 80% or more, sealing rate of the through holes by the metal and insulating substrate is 99% or more, and the insulating substrate is at least one kind selected from a group consisting of aluminum hydroxide, silicon dioxide, metal alkoxide, lithium chloride, titanium oxide, magnesium oxide, tantalum oxide, niobium oxide, and zirconium oxide.
Abstract translation: 要解决的问题：为了获得能够提供能够最小化布线不良的各向异性导电构件的微结构，并提供其制造方法。 解决方案：在绝缘基板中设置的通孔中的金属和绝缘材料的微结构中，绝缘基板中的通孔的密度为1×10
6 < SP> -1×10 10 / mm 2 ，通孔的平均开口直径为10-5000nm，平均深度 的通孔为10〜1000μm，通过金属的通孔的密封率为80％以上，金属绝缘基板的通孔的密封率为99％以上，绝缘基板为 至少一种选自氢氧化铝，二氧化硅，金属醇盐，氯化锂，氧化钛，氧化镁，氧化钽，氧化铌和氧化锆组成的组。 版权所有（C）2012，JPO＆INPIT -
公开(公告)号：JP2011080139A
公开(公告)日：2011-04-21
申请号：JP2010133736
申请日：2010-06-11
Applicant: Fujifilm Corp , 富士フイルム株式会社
Inventor： YAMASHITA KOSUKE , HATANAKA YUSUKE
IPC: C25D7/00 , B82B1/00 , B82B3/00 , C25D5/54 , C25D11/04 , H01B5/16 , H01B13/00 , H01R11/01 , H01R43/00
Abstract: PROBLEM TO BE SOLVED: To provide a metal-filled fine structure which has reduced warpage, high mechanical strength and enhanced flatness, and to provide a method for producing the same.
SOLUTION: The metal-filled fine structure includes: a penetration structure which is formed of an insulative substrate having through-holes with pore diameters of 10-5,000 nm and a depth of 50-1,000 μm in a density of 1×10
6 to 1×10
10 /mm
2 ; and a metal which is filled in the inner part of the through-hole down to the depth of 80% or more of the depth of the through-hole. The method for producing the same is also disclosed.
COPYRIGHT: (C)2011,JPO&INPITAbstract translation: 要解决的问题：提供一种具有降低的翘曲，高机械强度和增强的平坦度的金属填充的精细结构，并提供其制造方法。 解决方案：金属填充的精细结构包括：穿透结构，其由具有孔径为10-5000nm和深度为50-1,000μm的通孔的绝缘基底形成，密度为1×10
6 至1×10 10 / mm 2 ; 以及填充在贯通孔的内部的深度为通孔深度的80％以上的金属。 还公开了其制造方法。 版权所有（C）2011，JPO＆INPIT
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.028 seconds)
