公开(公告)号：DE3067746D1

公开(公告)日：1984-06-14

申请号：DE3067746

申请日：1980-07-16

Applicant: FUJITSU LTD

Inventor： YANASE TAKEYASU

IPC: G11C11/14 ,  G11C19/08

公开(公告)号：CA1238111A

公开(公告)日：1988-06-14

申请号：CA475170

申请日：1985-02-26

Applicant: FUJITSU LTD

Inventor： AMATSU MASASHI ,  YANASE TAKEYASU ,  INOUE HIROSHI ,  NAKAGAWA YUSUKE

IPC: G11C11/14 ,  G11C19/08

Abstract: This invention provides a magnetic bubble memory device comprising a magnetic layer in which magnetic bubbles can be moved and a bubble propagation path defined by a pattern of magnetically soft elements, each of the pattern elements having an asymmetrically crooked or curved shape with an entrance-side segment and an exit-side segment having different lengths. The pattern elements are arranged on the surface of the magnetic layer at a predetermined period in such a manner that the exit-side segment of one of the adjacent pattern elements is opposed to the outer side of the entranceside segment of the other pattern element, with a gap therebetween. The difference in length between the entrance-side segment and the exit-side segment of the pattern element is 10 to 25% of the height of the pattern element. This bubble propagation pattern has a geometry which is favourable for gaining an increase in density and which can provide a high propagation characteristic.

公开(公告)号：DE3378863D1

公开(公告)日：1989-02-09

申请号：DE3378863

申请日：1983-07-19

Applicant: FUJITSU LTD

Inventor： YANASE TAKEYASU ,  AMATSU MASASHI

IPC: G11C11/14 ,  G11C19/08

Abstract: A magnetic-bubble memory device comprises a bubble propagation track defined by patterns of magnetically soft material, along which track magnetic bubbles are propagated in response to an in-plane rotating magnetic drive field. The bubble propagation track has a first track portion (11) and a second track portion (12) and a connection portion (13) for interconnecting the first and second track portions. The first track portion is defined by conventional propagation patterns, and the second track portion is defined by hook-shaped wide-gap patterns. One end part (14a) of the connection pattern is arranged with respect to the end pattern of the first track portion in the same constructional relationship as that between the successive patterns of the first track, and an opposite end part (14b) of the connection portion is arranged with respect to the end pattern of the second track portion in the same constructional relationship as that between the successive patterns of the second track. Such a bubble propagation track makes it possible to realise a 4µm period 4Mb bubble memory.

公开(公告)号：CA1207901A

公开(公告)日：1986-07-15

申请号：CA432329

申请日：1983-07-13

Applicant: FUJITSU LTD

Inventor： YANASE TAKEYASU ,  AMATSU MASASHI

IPC: G11C11/14 ,  G11C19/08

Abstract: A magnetic-bubble memory device comprising a bubble propagation path defined by patterns of magnetically soft material, along which magnetic bubbles propagate in response to an in-plane rotating magnetic drive field. The bubble propagation path has a first track and a second track and a connection for interconnecting the first track and the second track. The first track is defined by conventional propagation patterns, and the second track is defined by known hook-shaped wide-gap patterns or modified wide-gap patterns. The connection includes a connection pattern having one end portion arranged with respect to the terminal pattern of the first track in the same constructional relationship as that between the successive patterns of the first track and another end portion arranged with respect to the terminal pattern of the second track in the same constructional relationship as that between the successive patterns of the second track. Such a bubble propagation track makes it possible to realize a 4 .mu.m period 4 Mb bubble memory.

公开(公告)号：CA1197924A

公开(公告)日：1985-12-10

申请号：CA430571

申请日：1983-06-16

Applicant: FUJITSU LTD

Inventor： SATOH YOSHIO ,  YANASE TAKEYASU ,  KOMENOU KAZUNARI

IPC: G11C19/08 ,  G11C11/15

Abstract: MAGNETIC BUBBLE MEMORY DEVICE A magnetic bubble memory device comprises minor loops for the storage of information and a major loop operably associated with the minor loops through gates, the minor loops being defined by an ion-implanted pattern and the gate portions of the major line being defined by patterns of magnetically soft material. This constitution makes it possible to provide a high storage density and superior gate operating margins.

公开(公告)号：DE3380503D1

公开(公告)日：1989-10-05

申请号：DE3380503

申请日：1983-06-21

Applicant: FUJITSU LTD

Inventor： SATOH YOSHIO ,  KOMENOU KAZUNARI ,  YANASE TAKEYASU

IPC: G11C19/08

Abstract: A magnetic bubble memory device comprises minor loops (ml) for the storage of information and a major loop (ML) operably associated with the minor loops through gates, the minor loops being defined by an ion-implanted pattern (8) and the gate portions (13) of the major line being defined by patterns of magnetically soft material. This constitution makes it possible to provide a high storage density and superior gate operating margins. The gate portions of the minor loops are formed with cusps (9a) and conductor patterns (CD, 16) extend between the major-line gate portions (13) and the cusps (9a) in the minor-loop gate portions. The conductor patterns may be in the form of hairpin loops (16, Figure 3) or meandering portions (25, Figure 12) consisting of two U-shaped parts extending in opposite directions.

公开(公告)号：DE3378940D1

公开(公告)日：1989-02-16

申请号：DE3378940

申请日：1983-07-14

Applicant: FUJITSU LTD

Inventor： YANASE TAKEYASU

IPC: G11C11/14 ,  G11C19/08

Abstract: @ A magnetic-bubble memory device comprising a bubble propagation track defined by patterns of magnetically soft material, along which track magnetic bubbles propagate in response to an in-plane rotating magnetic drive field. The bubble propagation track has a first track (20) and a second track (21) interconnected by a turn and defined by known hook-shaped wide-gap patterns (23, 24) or by modified wide-gap patterns. The turn comprises a crooked bar-shaped pattern (25). One end portion of the end pattern (23) of the first track (20) is positioned opposite and preferably substantially perpendicular to the inner edge (25a) of the crooked bar-shaped pattern (25), and one end portion of the crooked bar-shaped pattern (25) is positioned adjacent to the end pattern (24) of the second track (21). Such a bubble propagation track makes it possible to realize a 4 µm period, 4Mb bubble memory. For a 180° turn, the turn pattern may comprise an auxiliary crooked bar-shaped pattern (36) in addition to the first bar-shaped pattern (35, Figure 20).

公开(公告)号：CA1207444A

公开(公告)日：1986-07-08

申请号：CA432330

申请日：1983-07-13

Applicant: FUJITSU LTD

Inventor： YANASE TAKEYASU

IPC: G11C11/14 ,  G11C19/08

Abstract: A magnetic-bubble memory device having a bubble propagation track, defined by patterns of magnetically soft material, along which magnetic bubbles propagate in response to an in-plane rotating magnetic drive field. The bubble propagation track has a first track and a second track interconnected by a turn and defined by known hook-shaped wide-gap patterns or by modified wide-gap patterns. The turn includes a crooked barshaped pattern. An end portion of the last pattern of the first track is positioned opposite the inner edge of the crooked bar-shaped pattern, and an end portion of the crooked bar-shaped pattern is positioned adjacent to the first pattern of the second track. Such a bubble propagation track makes it possible to realize a 4 .mu.m period, 4 Mb bubble memory.

公开(公告)号：EP0032157A4

公开(公告)日：1982-01-08

申请号：EP80901330

申请日：1981-02-09

Applicant: FUJITSU LTD

Inventor： YANASE TAKEYASU

IPC: G11C11/14 ,  G11C19/08

CPC classification number: G11C19/0883

公开(公告)号：JPH029080A

公开(公告)日：1990-01-12

申请号：JP15865888

申请日：1988-06-27

Applicant: FUJITSU LTD

Inventor： MAJIMA NIWAJI ,  KUBOTA ATSUSHI ,  KASAHARA SHINICHI ,  SAITO GIICHI ,  YANASE TAKEYASU

IPC: G11C11/14

Abstract: PURPOSE:To reduce error for start and stop by inclining the face of a magnetic bubble memory element to faces of bias magnets in the X direction of the arrangement direction of a Permalloy pattern and the Y direction orthogonal to this direction and applying X-direction and Y-direction magnetic fields to magnetic bubbles. CONSTITUTION:In a magnetic bubble memory device having a Permalloy pattern 12, the face of a magnetic bubble memory element 1 is inclined to faces of bias magnets 3 in both of the X direction of the arrangement direction of the Permalloy pattern 21 and the Y direction orthogonal to this direction. A hold magnetic field A in the direction of 180 deg. and a hold magnetic field B in the direction of 90 deg. are applied to magnetic bubbles 22. Thus, an actual hold magnetic field C is deviated slightly ahead with respect to the phase of the rotating magnetic field which drives magnetic bubbles, and the potential in the high potential-side front end is more raised, and the number of magnetic bubbles which are transferred to adjacent patterns beyond gaps is reduced.