公开(公告)号：EP2476644A3

公开(公告)日：2014-01-22

申请号：EP11184861.0

申请日：2011-10-12

Applicant: Freescale Semiconductor, Inc.

Inventor： Karlin, Lisa H ,  Kierst, David W. ,  Liu, Lianjun ,  Liu, Wie ,  Montez, Ruben B. ,  Steimle, Robert F.

IPC: B81C1/00

CPC classification number: B81C1/00801 ,  B81B2207/07 ,  B81C2201/053

Abstract: A method of forming a MEMS device (10) includes forming a sacrificial layer (34) over a substrate (12). The method further includes forming a metal layer (42) over the sacrificial layer (34) and forming a protection layer (44) overlying the metal layer (42). The method further includes etching the protection layer (44) and the metal layer (42) to form a structure (56) having a remaining portion of the protection layer formed over a remaining portion of the metal layer. The method further includes etching the sacrificial layer (34) to form a movable portion of the MEMS device, wherein the remaining portion of the protection layer protects the remaining portion of the metal layer during the etching of the sacrificial layer (34) to form the movable portion of the MEMS device (10).

公开(公告)号：EP2476644A2

公开(公告)日：2012-07-18

申请号：EP11184861.0

申请日：2011-10-12

Applicant: Freescale Semiconductor, Inc.

Inventor： Karlin, Lisa H ,  Kierst, David W. ,  Liu, Lianjun ,  Liu, Wie ,  Montez, Ruben B. ,  Steimle, Robert F.

IPC: B81C1/00

CPC classification number: B81C1/00801 ,  B81B2207/07 ,  B81C2201/053

Abstract: A method of forming a MEMS device (10) includes forming a sacrificial layer (34) over a substrate (12). The method further includes forming a metal layer (42) over the sacrificial layer (34) and forming a protection layer (44) overlying the metal layer (42). The method further includes etching the protection layer (44) and the metal layer (42) to form a structure (56) having a remaining portion of the protection layer formed over a remaining portion of the metal layer. The method further includes etching the sacrificial layer (34) to form a movable portion of the MEMS device, wherein the remaining portion of the protection layer protects the remaining portion of the metal layer during the etching of the sacrificial layer (34) to form the movable portion of the MEMS device (10).

Abstract translation: 形成MEMS器件（10）的方法包括在衬底（12）上形成牺牲层（34）。 该方法还包括在牺牲层（34）上方形成金属层（42），并形成覆盖在金属层（42）上的保护层（44）。 该方法还包括蚀刻保护层（44）和金属层（42）以形成在金属层的剩余部分上形成保护层的剩余部分的结构（56）。 该方法还包括蚀刻牺牲层（34）以形成MEMS器件的可移动部分，其中保护层的剩余部分在蚀刻牺牲层（34）期间保护金属层的剩余部分，以形成 MEMS器件（10）的可移动部分。