公开(公告)号：JPS609187A

公开(公告)日：1985-01-18

申请号：JP11736983

申请日：1983-06-29

Applicant: FUJITSU LTD

Inventor： SHINOHARA KOUJI ,  NISHIJIMA YOSHITO ,  FUKUDA HIROKAZU ,  YAMAMOTO KOUSAKU

IPC: H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/26 ,  H01L33/40 ,  H01S5/00 ,  H01S5/183 ,  H01S5/32 ,  H01S3/18

Abstract: PURPOSE:To reduce threshold currents, to improve efficiency and to stabilize a mode by forming a refractive-index guiding to a surface light-emission semiconductor light-emitting device. CONSTITUTION:A P type PbSnTe layer 2 as an active layer and an N type PbTe layer 3 as a second clad layer are grown on a P type PbTe substrate 1 using a (100) face as a main surface in succession. Mesa etching through which an active region is left in a shape such as a circle is executed up to depth reaching to the PbTe substrate 1. An N type PbTe layer 4 and a P type PbTe layer 5 are grown on a surface to be etched in succession, and an N type PbTe layer 6 is grown on the whoel surface. The N type PbTe layer 6 functions as a contact layer for an N side electrode while also serving as a window layer, but the layer 6 grows on the whole surface of a base body when a growth onto the P type PbTe layer 5 progresses and the layer 6 reaches to a growing surface or the height of the upper surface of the N type PbTe layer 3. N side electrodes 7 and a P side electrode 8 are disposed by using a gold group material. The P side electrode 8 functions as one electrode while serving as a reflecting film.

公开(公告)号：JPS5988835A

公开(公告)日：1984-05-22

申请号：JP19942282

申请日：1982-11-12

Applicant: FUJITSU LTD

Inventor： NISHIJIMA YOSHITO ,  FUKUDA HIROKAZU ,  YAMAMOTO KOUSAKU

IPC: H01L21/208 ,  H01L21/368 ,  H01S5/00

Abstract: PURPOSE:To prevent impurities from diffusing into an upper comfinement layer by arranging a cooling member in a reaction tube with being close to an epitaxial growth jig thereby rapidly cooling a substrate after epitaxial growth by moving a boat onto the cooling member. CONSTITUTION:In liquid reservoirs 37-39 of a fixed member 33 of a jig, PbTe1-ySey 40 for a lower trapping layer, Pb1-xSnxTe 41 for an active layer and PbTe1-ySey 42 for a lower confinement layer are supplied respectively, being added with Tl. A boat 32 mounted on a carbonic material 34 is buried in a silica plate 35 and is introduced into a reaction tube 43 of H2 atmosphere to fuse a crystal material by heating an oven 36. Next, the boat 32 is moved by movement C to arrange liquid reservoirs on a substrate 31 successively and to form an epitaxial layer. After forming the epitaxial layer, the boat 32 is slidden by the movement C instantly and carried on the silica plate 35 which is a poor conductor for heat, where the substrate 31 in the boat 32 is cooled down rapidly. Used melt is contained in a reservoir 44 of the carbonic plate 34. Cooling prevents impurities from transfering from an active layer to an upper confinement layer in spite of making the active layer thinner, thereby facilitating the fabrication of single mode type laser elements.

公开(公告)号：JPS5987823A

公开(公告)日：1984-05-21

申请号：JP19824882

申请日：1982-11-10

Applicant: FUJITSU LTD

Inventor： YAMAMOTO KOUSAKU ,  NISHIJIMA YOSHITO ,  FUKUDA HIROKAZU

IPC: H01L31/0264 ,  H01L21/368

Abstract: PURPOSE:To wipe out and remove unnecessary solution for epitaxial growth remaining on a substrate easily by inserting a solution draining member into a piercing hole provided behind a solution storage of a sliding member. CONSTITUTION:A piercing hole 12 is provided to the backside of a solution storage 17 looking from the sliding direction indicated by an arrow B and a board shape solution draining member 13, which is made of material such as quartz or carbon and can be moved freely to the vertical direction, is inserted into the piercing hole 12. A substrate 16 is embedded in a concave 15 of a supporting member 14 and the solution storage 17 of the sliding member 11 is filled by the material 18 for an epitaxial layer formed on the substrate 16. After that the epitaxial growth equipment is introduced into a reaction tube of a hydrogen gas atmosphere and the reaction tube is heated by a furnace and the material for epitaxial layer formation is melted. Then the sliding member 11 is moved to the direction of the arrow B and the solution storage 17 is placed upon the substrate 16 and the epitaxial layer is formed on the substrate by dropping the temperature of the furnace. Then the sliding member 11 is moved further to the direction of the arrow B and unnecessary solution remaining on the substrate 16 after epitaxial growth is wiped and removed by the solution draining member 13.

公开(公告)号：JPS5925291A

公开(公告)日：1984-02-09

申请号：JP13413482

申请日：1982-07-30

Applicant: Fujitsu Ltd

Inventor： YAMAMOTO KOUSAKU ,  NISHIJIMA YOSHITO ,  FUKUDA HIROKAZU

IPC: H01L21/208 ,  H01S5/00 ,  H01S5/022 ,  H01S5/32

CPC classification number: H01S5/3222 ,  H01S5/2081

Abstract: PURPOSE:To enhance the etching accuracy by a method wherein liquid selenium or tellurium is used as the etchant for a substrate surface after patterning an active layer, when a laser element is manufactured on a compound semiconductor substrate which contains Pb. CONSTITUTION:An epitaxial layer composed of lead, tellurium, and selenium is formed as a buffer layer on the compound semiconductor substrate which contains lead, and an epitaxial layer composed of lead, tin, and tellurium is formed thereon as the active layer into a fixed pattern. This substrate 1 is arranged in a recess 22 of a supporting base 21 for a liquid epitaxial growing device, and a dummy substrate 24 of PbTe is arranged in a recess 23. The selenium or tellurium 27 is contained in a liquid reservoir 26 of a slide member 25, and a PbTe1-ySey 29 of an enclosed layer forming material is contained in a liquid reservoir 28. The lead and tin on the surface of the substrate 1 dissolves in the selenium or tellurium solution 27, and accordingly the surface of the active layer is etched.

Abstract translation: 目的：通过在图案化活性层之后使用液体硒或碲作为衬底表面的蚀刻剂的方法来提高蚀刻精度，当在包含Pb的化合物半导体衬底上制造激光元件时。 构成：在包含铅的化合物半导体衬底上形成由铅，碲和硒构成的外延层作为缓冲层，并且在其上形成由铅，锡和碲组成的外延层作为活性层，形成固定 模式。 该基板1布置在用于液体外延生长装置的支撑基座21的凹部22中，并且PbTe的虚拟基板24布置在凹部23中。硒或碲27包含在滑块的液体储存器26中 构件25和封闭层形成材料的PbTe1-ySey 29包含在液体储存器28中。衬底1的表面上的铅和锡溶解在硒或碲溶液27中，因此溶解于活性物质的表面 层蚀刻。

公开(公告)号：JPS58127903A

公开(公告)日：1983-07-30

申请号：JP1055682

申请日：1982-01-25

Applicant: FUJITSU LTD

Inventor： SHINOHARA KOUJI ,  FUKUDA HIROKAZU ,  KAWABATA YOSHIO ,  NISHIJIMA YOSHITO ,  YAMAMOTO KOUSAKU

IPC: G02B7/00

Abstract: PURPOSE:To make the optical axis adjustment of an invisible laser easy by moving a laser mount in the disposing directions of laser elements by the size of the space between both laser elements after adjusting the optical axis by using a visible semiconductor laser element. CONSTITUTION:An IR semiconductor 1aser element 2 and a visible semiconductor laser element 3 are adjacently disposed in the head part of a cooling stem 1 made of copper as a supporting member, by using indium layers 4a, 4b, respectively. A ceramic plate 5 is placed on the upper part of the stem 1, and terminal lead conductors 6a, 6b are provided thereon and are connected with the top contact gold (Au) wires 7a, 7b of the two laser element 2, 3. Further, a screw hole 8 for mounting a laser mount to the cooling rod of a refrigerator is provided to the stem 1.

公开(公告)号：JPS5853878A

公开(公告)日：1983-03-30

申请号：JP15249981

申请日：1981-09-25

Applicant: FUJITSU LTD

Inventor： FUKUDA HIROKAZU ,  SHINOHARA KOUJI ,  KAWABATA YOSHIO ,  NISHIJIMA YOSHITO ,  YAMAMOTO KOUSAKU

IPC: H01L21/368 ,  H01S5/00 ,  H01S5/32

Abstract: PURPOSE:To prevent crack and improve yield of chipping in a compound semiconductor laser element including Pb by making the lattice constant of crystal layer at the upper part of crystal layer of light emitting region equal to that of the crystal layer in the light emitting region. CONSTITUTION:A P type Pb1-xSnxTe 22, P type Pb1-xSnxTe active layer 23 and an N type PbTe1-ySey24 are epitaxially grown in the liquid phase on the P type PbTe 21. When the lattice constant of the upper layer 24 of the active layer is made equal to that of the active layer, any crack is not generated in case of forming cleavage on the crystal and the yield of chipping can be improved. Moreover, any crystal defect is not generated in the vicinity of interface between the layers 23 and 24 owing to the lattice alignment and accordingly the laser beam emitting efficiency is not lowered.

公开(公告)号：JPS5845192A

公开(公告)日：1983-03-16

申请号：JP14330481

申请日：1981-09-10

Applicant: FUJITSU LTD

Inventor： YAMAMOTO KOUSAKU ,  KAWABATA YOSHIO ,  NISHIJIMA YOSHITO ,  FUKUDA HIROKAZU ,  SHINOHARA KOUJI

IPC: C30B19/06 ,  H01L21/208 ,  H01S5/00

Abstract: PURPOSE:To execute efficient growth, by providing a first slidable member having a liquid phase material reservoir on the upper face of the support of a base plate having a through hole for installing a base plate on the inside wall, and a second slidable member having a liquid phase used material reservoir on the lower face, and adjusting relation of arrangement of both reservoirs with respect to the through hole. CONSTITUTION:A first slidable member 21 having reservoirs 25, 27, 29 for containing a liquid phase material for being used for crystal growth is provided on the upper face of the support 23 of a base plate having a through hole 36 in the vertical direction for enabling installation of a base plate 35 on the inside wall. A second slidable member 22 having a reservoir 30 for containing a used liquid phase material is provided along the lower face. The arrangement relation of the reservoirs of the 2 members 21, 22 is adjusted with respect to the hole 36 of the support 23 to successively drop the material out of the reservoirs 25, 27, 29 of the member 21 through the hole 36 to the reservoir 30 of the member 22.

公开(公告)号：JPS6066887A

公开(公告)日：1985-04-17

申请号：JP17517883

申请日：1983-09-24

Applicant: FUJITSU LTD

Inventor： SHINOHARA KOUJI ,  NISHIJIMA YOSHITO ,  FUKUDA HIROKAZU ,  YAMAMOTO KOUSAKU

IPC: H01S5/00 ,  H01S5/32

Abstract: PURPOSE:To obtain the high quality and the good reproducibility of an infrared ray semiconductor laser and to enable low current action by a method wherein the multilayer epitaxial growth of a crystal layer and the formation of an impurity region by diffusion are carried out. CONSTITUTION:The titled device is equipped with a PbSnTe active layer 2 and a PbTe clad layer 3 grown on a PbTe crystal substrate 1 of one conductivity type, an insulation film 4 selectively formed on this layer 3, the impurity region 5 of the reverse conductivity type formed by introduction of a reverse conductivity type impurity with this film 4 as a mask, p-n junctions formed from inside the substrate 1 to the layers 2 and 3 by the presence of this region 5, the impurity region 6 of one conductivity type formed by shallow introduction of one conductivity type impurity, and a part 5A reaching the surface by penetration in band form through the layers 2 and 3 by the presence of this region 6. As a result, the infrared ray semiconductor laser of PbTe/PbSnTe series can be obtained.

公开(公告)号：JPS59167082A

公开(公告)日：1984-09-20

申请号：JP4097883

申请日：1983-03-11

Applicant: Fujitsu Ltd

Inventor： NISHIJIMA YOSHITO ,  FUKUDA HIROKAZU ,  YAMAMOTO KOUSAKU

IPC: H01S5/00

Abstract: PURPOSE: To enable to observe faithfully the far field pattern of an infrared ray laser light by eliminating the background infrared radiation from the surroundings to a screen for observing the far field pattern.
CONSTITUTION: Coolant such as liquid nitrogen 32 is contained in the inner package 21 of a vacuum heat insulating container 30 incorporating the screen 25 and two infrared filters 26 and 27, thus cooling the incorporated screen 25 and each of the infrared filters 26 and 27 to a low temperature. The screen 25 is irradiated with the infrared laser light 33 from one infrared ray transmitting window 28 through the infrared filter 26 in this state, resulting in the image pickup of the irradiated pattern through the other infrared ray transmitting window 29 and the infrared filter 27. Such a manner enables to inhibit the infrared radiation from the screen 25 and the infrared filters 26 and 27 themselves because those members are cooled. Since the background infrared radiation from outside is eliminated by said container 30, etc., the far field pattern of the infrared laser light can be observed faithfully.
COPYRIGHT: (C)1984,JPO&Japio

Abstract translation: 目的：通过消除从周围的背景红外辐射到观察远场图案的屏幕，能够忠实地观察红外线激光的远场图案。 构成：在包含屏幕25的真空绝热容器30的内包装21和两个红外线过滤器26和27中包含诸如液氮32的冷却剂，从而将结合的屏幕25和每个红外滤光器26和27冷却到 低温。 在该状态下，通过红外线滤光器26从一个红外线透射窗28照射荧光屏25，通过另一个红外线透射窗29和红外线滤光器27对照射图案进行摄像。 这样的方式能够抑制来自屏幕25和红外滤光器26和27本身的红外辐射，因为这些部件被冷却。 由于通过所述容器30等消除来自外部的背景红外辐射，所以可以忠实地观察到红外激光的远场图案。

公开(公告)号：JPS5929486A

公开(公告)日：1984-02-16

申请号：JP14033182

申请日：1982-08-11

Applicant: Fujitsu Ltd

Inventor： FUKUDA HIROKAZU ,  SHINOHARA KOUJI ,  NISHIJIMA YOSHITO ,  YAMAMOTO KOUSAKU

IPC: H01S5/00 ,  H01S5/042

CPC classification number: H01S5/0425

Abstract: PURPOSE:To enable a thick electrode layer connecting to the golden ribbon lead to be formed easily by means of a plating process by a method wherein an insulating film is selectively formed on the entire surface of a substrate selectively coated with the insulating film and the backside thereof coated with a gold layer evaporating film to plate the insulating film with a gold layer film excluding the top surface of a mesastriping light emitting region. CONSTITUTION:Several striping grooves 5 with the depth reaching a buffer layer 2 are provided in parallel at specified interval and golden electrode layers 8, 9 are respectively coated to be formed on the surface and back side of a substrate 1 including a selectively formed insulating film 7 excluding the top surface of the divided mesastriping light emitting regions 6 while an oxide insulating film made of SiO2 is patterned selectively coating the specified element separating region to be the boundary between each laser elements to form an insulating film pattern 31 on the electrode layer 9. Several laser elements may be easily formed by means of forming a gold plate layer 32 around several score mum thick with a plating process on the electrode layer 9 and utilizing the insulating film pattern region 31 not gold plated for cleaving each edge parts 33, 34 and 35.

Abstract translation: 目的：为了能够通过电镀工艺容易地形成连接到金色带状导线的厚电极层，其中在选择性地涂覆有绝缘膜和背面的基板的整个表面上选择性地形成绝缘膜 涂覆有金层蒸发膜以用除去发光区域的顶表面之外的金层膜对绝缘膜进行平版化。 构成：以规定的间隔平行设置多个具有深度达到缓冲层2的条纹槽5，并且将金电极层8,9分别涂布在基板1的表面和背面上，该基板1包括选择性地形成的绝缘膜 除了分割的中间移动发光区域6的顶表面之外，而由SiO 2制成的氧化物绝缘膜被图案化以选择性地将指定的元件分离区域涂覆为每个激光元件之间的边界，以在电极层9上形成绝缘膜图案31 可以通过在电极层9上形成具有电镀工艺的几个厚度为几厘米的金板层32并且利用未镀金的绝缘膜图案区域31来切割每个边缘部分33,34来容易地形成几个激光元件 和35。