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1.发明公开公开(公告)号：US20230416162A1
公开(公告)日：2023-12-28
申请号：US17851269
申请日：2022-06-28
Applicant: General Electric Company
Inventor： Juan P. Borja , Daniel Gene Dunn , Jared Hogg Weaver , Anant Achyut Setlur
CPC classification number: C04B37/003 , F01D9/02 , F01D5/282 , F01D25/005 , B32B18/00 , F05D2220/32 , F05D2230/20 , F05D2240/12 , F05D2240/30 , F05D2300/6033 , C04B2237/16 , C04B2237/38 , C04B2237/61 , C04B2237/84
Abstract: A method for modifying a composite component may include positioning a barrier segment between an infiltrated segment of the composite component and a green segment to form an assembly; and initiating an infiltration process. The barrier segment may have a barrier segment permeability that is lower than a permeability of the infiltrated segment, a permeability of the green segment, or both. A composite component may include an infiltrated segment infiltrated with a molten material during a prior infiltration process; a green segment that is uninfiltrated; and a barrier segment having a microstructure different from the infiltrated segment, the green segment, or both. The microstructure of the barrier segment may be configured to slow a flow of material between the infiltrated segment and the green segment during a subsequent infiltration process.
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公开(公告)号：US20220231201A1
公开(公告)日：2022-07-21
申请号：US17589478
申请日：2022-01-31
Applicant: GENERAL ELECTRIC COMPANY
Inventor： Samuel Joseph Camardello , Anant Achyut Setlur
Abstract: A device including an LED light source optically coupled to a phosphor material including a green-emitting phosphor selected from the group consisting of compositions (A1)-(A62) and combinations thereof.
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公开(公告)号：US10230022B2
公开(公告)日：2019-03-12
申请号：US14962624
申请日：2015-12-08
Applicant: General Electric Company
Inventor： Anant Achyut Setlur , James Edward Murphy , Florencio Garcia , Srinivas Prasad Sista
Abstract: A lighting apparatus is presented. The lighting apparatus includes a semiconductor light source, a color stable Mn4+ doped phosphor and a quantum dot material, each of the color stable Mn4+ doped phosphor and the quantum dot material being radiationally coupled to the semiconductor light source. A percentage intensity loss of the color stable Mn4+ doped phosphor after exposure to a light flux of at least 20 w/cm2 at a temperature of at least 50 degrees Celsius for at least 21 hours is ≤4%. A backlight device including the lighting apparatus is also presented.
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公开(公告)号：US09938457B1
公开(公告)日：2018-04-10
申请号：US15270657
申请日：2016-09-20
Applicant: General Electric Company
Inventor： Digamber Gurudas Porob , James Edward Murphy , Florencio Garcia , Srinivas Prasad Sista , Anant Achyut Setlur , William Winder Beers , Fangming Du
CPC classification number: C09K11/617 , C09K11/02 , H01L25/0753 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L33/502 , H01L33/56 , H01L33/62 , H01L2933/0041 , H01L2933/005 , H01L2933/0066
Abstract: Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including IniGajAlkN, wherein 0≤i; 0≤j; 0≤k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C1-C20 alcohol, a C1-C20 ketone, a C1-C20 acetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.
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公开(公告)号：US09611237B2
公开(公告)日：2017-04-04
申请号：US14348244
申请日：2012-09-20
Applicant: GENERAL ELECTRIC COMPANY
Inventor： Prasanth Kumar Nammalwar , Digamber Gurudas Porob , Anant Achyut Setlur , Satya Kishore Manepalli
IPC: C09K11/61 , C09K11/79 , C09K11/80 , C09K11/59 , C09K11/64 , H01L33/50 , H01J61/44 , C07D301/19 , C09K11/77 , C07C1/24 , C07C5/03 , C07C29/132 , C07C407/00
CPC classification number: C07D301/19 , C07C1/24 , C07C5/03 , C07C29/132 , C07C407/00 , C07C2601/14 , C09K11/617 , C09K11/7721 , C09K11/7734 , C09K11/7774 , C09K11/7792 , H01J61/44 , H01L33/502 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: A phosphor material is presented that includes a blend of a first phosphor, a second phosphor and a third phosphor. The first phosphor includes a composition having a general formula of RE2−yM1+yA2−yScySin−wGewO12+δ:Ce3+ wherein RE is selected from a lanthanide ion or Y3+, where M is selected from Mg, Ca, Sr or Ba, A is selected from Mg or Zn and where 0≦y≦2, 2.5≦n≦3.5, 0≦w≦1, and −1.5≦δ≦1.5. The second phosphor includes a complex fluoride doped with manganese (Mn4+), and the third phosphor include a phosphor composition having an emission peak in a range from about 520 nanometers to about 680 nanometers. A lighting apparatus including such a phosphor material is also presented. The light apparatus includes a light source in addition to the phosphor material.
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Patent Agency Ranking
公开(公告)号：US09580648B2
公开(公告)日：2017-02-28
申请号：US14285746
申请日：2014-05-23
Applicant: GENERAL ELECTRIC COMPANY
Inventor： James Edward Murphy , Anant Achyut Setlur , Florencio Garcia , Robert Joseph Lyons , Ashfaqul Islam Chowdhury , Nagaveni Karkada , Prasanth Kumar Nammalwar
CPC classification number: C09K11/617 , C08K3/34 , C09K11/025 , C09K11/616 , H01L33/502 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A color stable Mn4+ doped phosphor of formula I, Ax[MFy]:Mn4+ I wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein % intensity loss of the phosphor after exposure to light flux of at least 80 w/cm2 at a temperature of at least 50° C. for at least 21 hours is ≦4%.
Abstract translation: 式I的颜色稳定的Mn4 +掺杂的荧光体，Ax [MFy]：Mn4 + I，其中A是Li，Na，K，Rb，Cs或它们的组合; M是Si，Ge，Sn，Ti，Zr，Al，Ga，In，Sc，Hf，Y，La，Nb，Ta，Bi，Gd或它们的组合; x是[MFy]离子的电荷的绝对值; y为5,6或7; 并且其中在至少80℃的温度下暴露至少80w / cm 2的光通量至少21小时后的荧光粉的强度损失百分比为±4％。
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7.发明申请公开(公告)号：US20160153842A1
公开(公告)日：2016-06-02
申请号：US14504961
申请日：2014-10-02
Applicant: General Electric Company
Inventor： Mark Allen Cheverton , Anant Achyut Setlur , Victor Petrovich Ostroverkhov , Guanghua Wang , James Anthony Brewer , Venkat Subramaniam Venkataramani
Abstract: A method of monitoring a surface temperature of a hot gas path component includes directing an excitation beam having an excitation wavelength at a layer of a sensor material composition deposited on a hot gas path component to induce a fluorescent radiation. The method includes measuring fluorescent radiation emitted by the sensor material composition. The fluorescent radiation includes at least a first intensity at a first wavelength and a second intensity at a second wavelength. The surface temperature of the hot gas path component is determined based on a ratio of the first intensity at the first wavelength and the second intensity at the second wavelength of the fluorescent radiation emitted by the sensor material composition.
Abstract translation: 监测热气体路径部件的表面温度的方法包括将具有激发波长的激发光束引导到沉积在热气体路径部件上的传感器材料组合物层以诱导荧光辐射。 该方法包括测量由传感器材料组成发射的荧光辐射。 荧光辐射包括至少第一波长的第一强度和第二波长的第二强度。 基于第一波长的第一强度与由传感器材料组合物发射的荧光辐射的第二波长处的第二强度的比率来确定热气体路径分量的表面温度。
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公开(公告)号：US20150361335A1
公开(公告)日：2015-12-17
申请号：US14303020
申请日：2014-06-12
Applicant: General Electric Company
Inventor： James Edward Murphy , Anant Achyut Setlur , Florencio Garcia , Srinivas Prasad Sista
CPC classification number: C09K11/616 , C09K11/617 , F21K9/60 , F21V9/30 , H01L33/502 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00012
Abstract: A process for synthesizing a manganese (Mn4+) doped phosphor includes milling particles of the a phosphor precursor of formula I, and contacting the milled particles with a fluorine-containing oxidizing agent at an elevated temperature Ax[MFy]:Mn4+ (I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.
Abstract translation: 用于合成锰（Mn4 +）掺杂荧光体的方法包括研磨式I的荧光体前体的研磨颗粒，并且在升高的温度下将碾磨的颗粒与含氟氧化剂接触。[MFy]：Mn4 +（I）其中A 是Li，Na，K，Rb，Cs或它们的组合; M是Si，Ge，Sn，Ti，Zr，Al，Ga，In，Sc，Hf，Y，La，Nb，Ta，Bi，Gd或它们的组合; x是[MFy]离子的电荷的绝对值; y是5,6或7。
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公开(公告)号：US20220161919A1
公开(公告)日：2022-05-26
申请号：US17100996
申请日：2020-11-23
Applicant: General Electric Company
Inventor： Hendrik Pieter Jacobus de Bock , William Dwight Gerstler , Anant Achyut Setlur , James William Bray
Abstract: An aerospace vehicle including: a body, wherein the body is configured to generate heat during operation; a coating disposed over at least a portion of the body, the coating being configured to shift a frequency of at least one wavelength of the heat generated by the body from a first frequency to a second frequency having higher transmissivity relative to a neighboring medium surrounding the body as compared to the first frequency.
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公开(公告)号：US09964455B2
公开(公告)日：2018-05-08
申请号：US14504961
申请日：2014-10-02
Applicant: General Electric Company
Inventor： Mark Allen Cheverton , Anant Achyut Setlur , Victor Petrovich Ostroverkhov , Guanghua Wang , James Anthony Brewer , Venkat Subramaniam Venkataramani
Abstract: A method of monitoring a surface temperature of a hot gas path component includes directing an excitation beam having an excitation wavelength at a layer of a sensor material composition deposited on a hot gas path component to induce a fluorescent radiation. The method includes measuring fluorescent radiation emitted by the sensor material composition. The fluorescent radiation includes at least a first intensity at a first wavelength and a second intensity at a second wavelength. The surface temperature of the hot gas path component is determined based on a ratio of the first intensity at the first wavelength and the second intensity at the second wavelength of the fluorescent radiation emitted by the sensor material composition.
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