公开(公告)号：WO1993005380A1

公开(公告)日：1993-03-18

申请号：PCT/US1992007421

申请日：1992-08-31

Applicant: GENERAL RESEARCH CORPORATION

Inventor： GENERAL RESEARCH CORPORATION ,  MILLER, Thomas, G.

IPC: G01N01/20

CPC classification number: G01T1/20

Abstract: A particular type of particle in an energy range of interest is detected using two photomultipliers (24, 26) spaced apart in facing relation to one another with a scintillator (22) is positioned between. Scintillator (22) comprises an array of optical fibers, preferably light pipes (40), arranged side-by-side. Each light pipe (40) has a first end proximate the first photomultiplier (24) and an opposing second end proximate the second photomultiplier (26) with one of its ends being non-transmissive of light. Contiguous light pipes (40) do not have their same ends being non-transmissive of light. Each light pipe (40) has a cross sectional dimension chosen in relation to a distance that a type of particle in the energy range of interest can travel. Signal processor unit (28) determines when a particular type of particle in the energy range of interest is detected and discriminates between different types of particles and rays by determining the number of light pipes (40) affected within a predetermined time interval.

公开(公告)号：WO1994020828A1

公开(公告)日：1994-09-15

申请号：PCT/US1994001858

申请日：1994-03-04

Applicant: GENERAL RESEARCH CORPORATION

Inventor： GENERAL RESEARCH CORPORATION ,  SHIVANANDAN, Kandiah

IPC: G01J05/60

CPC classification number: G01J5/602

Abstract: A method for measuring thermal differences in infrared emissions from semiconductors, the method utilizing an image sensor including an array detector having a plurality of detector elements which produce signals corresponding to semiconductor radiation emission focused thereupon by an optical lens system. At least one bandpass filter is utilized to substantially filter that portion of the semiconductor radiation emission having wavelengths greater than 5 micrometers. The detector element signals are processed to identify performance degrading phenomena occuring in the semiconductor device.

Abstract translation: 一种用于测量来自半导体的红外发射的热差的方法，所述方法利用包括具有多个检测器元件的阵列检测器的图像传感器，所述检测器元件产生对应于通过光学透镜系统聚焦的半导体辐射发射的信号。 使用至少一个带通滤波器来基本上过滤具有大于5微米波长的半导体辐射发射的那部分。 处理检测器元件信号以识别在半导体器件中发生的性能降级现象。

公开(公告)号：WO1992012415A1

公开(公告)日：1992-07-23

申请号：PCT/US1991009762

申请日：1991-12-30

Applicant: GENERAL RESEARCH CORPORATION

Inventor： GENERAL RESEARCH CORPORATION ,  MILLER, Thomas, G.

IPC: G01N23/09

CPC classification number: G01V5/0016 ,  G01N23/09 ,  H05H3/06

Abstract: A contraband detection system (18) determines substances concealed in a sample object by developing total neutron cross section spectra for a plurality of elements, including nitrogen, oxygen, hydrogen, and carbon. A processor (26) performs a contraband determination classification based on the total neutron cross section spectra for the plurality of elements. Included are a neutron source (20) for producing a pulsed beam (36) of fast white neutrons; a spatial neutron detection array (40); a conveyor system (28) for situating a sample object (29) between the source (20) and the detection array (40); a spectra analysis system (24) for determining the total neutron cross section spectra of elements located in the sample object (29); and, the processor (26). The neutron source (20) produces a beam (36) of fast white neutrons having a sufficient energy range whereby removal of neutrons from the beam caused by the presence of a plurality of contraband-indicating elements can be determined.

Abstract translation: 违禁品检测系统（18）通过开发包括氮，氧，氢和碳在内的多个元素的总中子截面光谱来确定样品中隐藏的物质。 处理器（26）基于多个元件的总中子截面光谱执行违禁品确定分类。 包括用于产生快速白色中子的脉冲束（36）的中子源（20）; 空间中子检测阵列（40）; 用于将源（20）和检测阵列（40）之间的样本对象（29）定位的传送系统（28）; 用于确定位于所述样品物体（29）中的元件的总中子截面光谱的光谱分析系统（24）; 和处理器（26）。 中子源（20）产生具有足够能量范围的快白色中子束（36），从而可以确定由存在多个违禁指示元件引起的束的中子的去除。