公开(公告)号：GB2456980B

公开(公告)日：2011-09-21

申请号：GB0909392

申请日：2007-11-09

Applicant: ADVANCED MICRO DEVICES INC ,  GLOBALFOUNDRIES INC

Inventor： WOOD OBERT REEVES II ,  RYOUNG-HAN KIM ,  WALLOW THOMAS

IPC: G03F1/14

Abstract: According to one exemplary embodiment, an extreme ultraviolet (EUV) pellicle for protecting a lithographic mask includes an aerogel film. The pellicle further includes a frame for mounting the aerogel film over the lithographic mask. The aerogel film causes the pellicle to have increased EUV light transmittance.

公开(公告)号：SG185210A1

公开(公告)日：2012-11-29

申请号：SG2012025573

申请日：2012-04-09

Applicant: GLOBALFOUNDRIES INC

Inventor： RYOUNG-HAN KIM

Abstract: OF THE INVENTION MULTILAYER INTERCONNECT STRUCTURE AND METHOD FOR INTEGRATED CIRCUITSA multilayer interconnect structure is formed by, providing a substrate (40) having thereon a first dielectric (50, 27) for supporting a multi-layer interconnection (39) having lower conductor MN (22, 23), upper conductor MN+1 (34, 35), dielectric interlayer (DIL) (68) and interconnecting via conductor VN-FuN (36, 36'). The lower conductor MN (22, 23) has a first upper surface (61) located in a recess below a second upper surface (56) of the first dielectric (50, 27). The DIL (68) is formed above the first (61) and second (56) surfaces. A cavity (1263) is etched through the DIL (68) from a desired location (122) of the upper conductor MN+I (34), exposing the first surface (61). The cavity (1263) is filled with a further electrical conductor (80) to form the upper conductor MN+1 (34) and the connecting via conductor VN-FUN (36, 36') making electrical contact with the first upper surface (61). A critical dimension (32, 37) between others (23) of lower conductors MN (22, 23) and the via conductor VN-FUN (36, 36') is lengthened. Leakage current and electro-migration there-between are reduced.Fig. 17