公开(公告)号：US09548275B2

公开(公告)日：2017-01-17

申请号：US13901108

申请日：2013-05-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Stephen P. Ayotte ,  Benjamin J. Pierce ,  Timothy M. Sullivan ,  Heather M. Truax

IPC: H01L23/00 ,  H01L27/20 ,  G01P15/08 ,  G01P15/09

CPC classification number: H01L23/562 ,  G01P15/0891 ,  G01P15/09 ,  H01L27/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An approach for detecting sudden changes in acceleration in a semiconductor device or semiconductor package containing the semiconductor device is disclosed. In one embodiment, a piezoelectric sensor is embedded in a semiconductor die. The piezoelectric sensor is configured to sense a mechanical force applied to the semiconductor die. An excessive force indicator is coupled to the piezoelectric sensor. The excessive force indicator is configured to generate an excessive force indication in response to the piezoelectric sensor sensing that the mechanical force applied to the semiconductor die has exceeded a predetermined threshold indicative of an excessive mechanical force.

Abstract translation: 公开了一种用于检测包含半导体器件的半导体器件或半导体封装中的加速度突然变化的方法。 在一个实施例中，将压电传感器嵌入到半导体管芯中。 压电传感器被配置为感测施加到半导体管芯的机械力。 过大的力指示器耦合到压电传感器。 过度的力指示器构造成响应于压电传感器产生过大的力指示，感测到施加到半导体管芯的机械力超过了表示过大机械力的预定阈值。