公开(公告)号：US11652142B2

公开(公告)日：2023-05-16

申请号：US17482374

申请日：2021-09-22

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mankyu Yang ,  Richard Taylor, III ,  Alexander Derrickson ,  Alexander Martin ,  Jagar Singh ,  Judson Robert Holt ,  Haiting Wang

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/735 ,  H01L29/10

CPC classification number: H01L29/0804 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/6625 ,  H01L29/735

Abstract: A structure for a lateral bipolar junction transistor is provided. The structure comprising an emitter including a first concentration of a first dopant. A collector including a second concentration of the first dopant, the first concentration of the first dopant may be different from the second concentration of the first dopant. An intrinsic base may be laterally arranged between the emitter and the collector, and an extrinsic base region may be above the intrinsic base. An emitter extension may be arranged adjacent to the emitter, whereby the emitter extension laterally extends under a portion of the extrinsic base region. A halo region may be arranged adjacent to the emitter extension, whereby the halo region laterally extends under another portion of the extrinsic base region.