公开(公告)号：US11056398B2

公开(公告)日：2021-07-06

申请号：US16517827

申请日：2019-07-22

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Daniel J. Jaeger ,  Naved A. Siddiqui ,  Shimpei Yamaguchi ,  Shreesh Narasimha

IPC: H01L21/8234 ,  H01L21/768 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

Abstract: A method includes forming a gate cut opening by removing a sacrificial material from a portion of a dummy gate in a first dielectric over a substrate. The gate cut opening includes a lower portion in which the sacrificial material was located and an upper portion extending laterally over the first dielectric. Filling the gate cut opening with a second dielectric creates a gate cut isolation. Recessing the second dielectric creates a cap opening in the second dielectric; and filling the cap opening with a third dielectric creates a dielectric cap. The third dielectric is different than the second dielectric, e.g., oxide versus nitride, allowing forming of an interconnect in at least a portion of the third dielectric without the second, harder dielectric acting as an etch stop.

公开(公告)号：US11522068B2

公开(公告)日：2022-12-06

申请号：US16523340

申请日：2019-07-26

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jiehui Shu ,  Chang Seo Park ,  Shimpei Yamaguchi ,  Tao Han ,  Yong Mo Yang ,  Jinping Liu ,  Hyuck Soo Yang

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/84

Abstract: One illustrative IC product disclosed herein includes first and second final gate structures and an insulating gate separation structure positioned between the first and second final gate structures. In one embodiment, the insulating gate separation structure has a stepped bottom surface with a substantially horizontally oriented bottom central surface that is surrounded by a substantially horizontally oriented recessed surface, wherein the substantially horizontally oriented bottom central surface is positioned a first level above the substrate and the substantially horizontally oriented recessed surface is positioned at a second level above the substrate, wherein the second level is greater than the first level.