公开(公告)号：WO2012147054A1

公开(公告)日：2012-11-01

申请号：PCT/IB2012/052115

申请日：2012-04-27

Applicant: GASPLAS AS ,  RISBY, Philip, John ,  PENNINGTON, Dale

Inventor： RISBY, Philip, John ,  PENNINGTON, Dale

IPC: H05H1/30 ,  H05H1/46

CPC classification number: H01J37/32449 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32357 ,  H05H1/30 ,  H05H1/34 ,  H05H1/46 ,  H05H2001/3478 ,  H05H2001/4622

Abstract: The present invention relates to a method and device for processing a gas by forming microwave plasmas of the gas. The gas that is to be processed is set in a two or three co-axial vortex flow inside the device and exposed to a microwave field to form the plasma in the inner co-axial vortex flow, which subsequently is expelled as a plasma afterglow through an outlet of the device. The device is provided with a microwave field choking effect by having a diameter of the exit channel larger than zero but smaller than 1/16 of the wavelength of the standing microwave within the microwave chamber and a length, ∈, of the exit channel that may correspondingly have one of the following ranges: from a factor larger than zero but smaller than (n+1/8), n G {0, 1, 2, 3}, of the wavelength of the standing microwave within the microwave chamber.

Abstract translation: 本发明涉及通过形成气体的微波等离子体来处理气体的方法和装置。 要处理的气体被设置在装置内部的两个或三个同轴涡流中并暴露于微波场以在内部同轴涡流中形成等离子体，其随后被排出为等离子体余辉 设备的出口。 通过使出口通道的直径大于零但小于微波室内的立体微波的波长的1/16，并且出口通道的长度α可以设置有微波场阻塞效应 相应地具有以下范围之一：从微波室内的立体微波的波长的大于零但小于（n + 1/8）的因子n G {0,1,2,3}。

公开(公告)号：EP2702839B1

公开(公告)日：2015-03-25

申请号：EP12723249.4

申请日：2012-04-27

Applicant: Gasplas AS

Inventor： RISBY, Philip, John ,  PENNINGTON, Dale

IPC: H05H1/34

CPC classification number: H01J37/32449 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32357 ,  H05H1/30 ,  H05H1/34 ,  H05H1/46 ,  H05H2001/3478 ,  H05H2001/4622

公开(公告)号：EP2702839A1

公开(公告)日：2014-03-05

申请号：EP12723249.4

申请日：2012-04-27

Applicant: Gasplas AS

Inventor： RISBY, Philip, John ,  PENNINGTON, Dale

IPC: H05H1/30 ,  H05H1/46

CPC classification number: H01J37/32449 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32357 ,  H05H1/30 ,  H05H1/34 ,  H05H1/46 ,  H05H2001/3478 ,  H05H2001/4622

Abstract: The present invention relates to a method and device for processing a gas by forming microwave plasmas of the gas. The gas that is to be processed is set in a two or three co-axial vortex flow inside the device and exposed to a microwave field to form the plasma in the inner co-axial vortex flow, which subsequently is expelled as a plasma afterglow through an outlet of the device. The device is provided with a microwave field choking effect by having a diameter of the exit channel larger than zero but smaller than 1/16 of the wavelength of the standing microwave within the microwave chamber and a length, ∈, of the exit channel that may correspondingly have one of the following ranges: from a factor larger than zero but smaller than (n+1/8), n G {0, 1, 2, 3}, of the wavelength of the standing microwave within the microwave chamber.