公开(公告)号：EP4340025A1

公开(公告)日：2024-03-20

申请号：EP23186567.6

申请日：2023-07-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： AJAY, . ,  JAIN, Ruchil Kumar ,  MAHAJAN, Prantik ,  ZAKA, Alban

IPC: H01L27/02 ,  H01L29/87

Abstract: Structures for a silicon-controlled rectifier and methods of forming same. The structure comprises a first well, a second well, and a third well in a semiconductor substrate. The third well is positioned between the first well and the second well. A first terminal includes a first doped region in the first well, and a second terminal includes a second doped region in the second well. The first well, the second well, and the second doped region have a first conductivity type, and the third well and the first doped region have a second conductivity type opposite to the first conductivity type. The structure further comprises a third doped region in the third well. The third doped region includes a first segment and a second segment, and the first segment is separated from the second segment by a portion of the first well and a portion of the third well.

公开(公告)号：EP4333059A1

公开(公告)日：2024-03-06

申请号：EP23182965.6

申请日：2023-07-03

Applicant: GlobalFoundries U.S. Inc.

Inventor： MAHAJAN, Prantik ,  AJAY, . ,  MITRA, Souvick ,  GAUTHIER, Robert J.

IPC: H01L27/02 ,  H01L29/74 ,  H01L29/87

Abstract: Device structures including a silicon-controlled rectifier and methods of forming a device structure including a silicon-controlled rectifier. The device structure comprises a first well and a second well in a semiconductor substrate, a first terminal including a first doped region in the first well, and a second terminal including a second doped region in the second well. The first well and the second doped region have a first conductivity type, and the second well and the first doped region have a second conductivity type opposite from the first conductivity type. The second well adjoins the first well along an interface. A third doped region includes a first portion in the first well and a second portion in the second well, and a gate structure that overlaps with a portion of the second well.