公开(公告)号：EP4220732A1

公开(公告)日：2023-08-02

申请号：EP22200707.2

申请日：2022-10-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ontalus, Viorel ,  Long, Justin C. ,  Baiocco, Robert K.

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/732 ,  H01L29/73

Abstract: A vertical bipolar transistor (BJT) comprising a collector region (12b) in a semiconductor substrate (12), a base region (12a) adjacent to the collector region and an emitter (28) extending above the base region and comprising a remnant of a hardmask (16) surrounding a lower portion of the emitter and a stepped region with a reduced cross-section are at the lower portion and which contacts the base region. The emitter region further comprises dielectric sidewall spacers (34), semiconductor sidewall spacers (24a) and an insulating material (14) under the sidewall spacers and the remnant of the hardmask (16). The method of manufacturing comprises a blanket deposition of the hardmask material (16) at the beginning of the method and opening the emitter window (22) through the hardmask.