公开(公告)号：EP4506987A1

公开(公告)日：2025-02-12

申请号：EP24153568.1

申请日：2024-01-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： CUCCI, Brett ,  HAZBUN, Ramsey ,  RASSEL, Richard ,  HE, Zhong-Xiang ,  MITCHELL, Patrick

IPC: H01L21/76 ,  H01L29/778 ,  H01L29/78 ,  H01L21/762 ,  H01L21/763

Abstract: Structures including a compound semiconductor layer stack and methods of forming such structures. The structure comprises a device region on a substrate. The device region includes a first section of a layer stack that has a plurality of semiconductor layers, and each semiconductor layer comprises a compound semiconductor material. The structure further comprises an isolation structure disposed about the section of the layer stack, and a device in the device region. The isolation structure penetrates through the layer stack to the substrate.