公开(公告)号：US20230326924A1

公开(公告)日：2023-10-12

申请号：US17658914

申请日：2022-04-12

Applicant: GlobalFoundries U.S. Inc.

Inventor： Anton V. Tokranov ,  Hong Yu ,  Edward P. Reis, JR.

IPC: H01L27/088 ,  H01L29/423 ,  H01L21/8234

CPC classification number: H01L27/088 ,  H01L29/42364 ,  H01L21/823462

Abstract: A structure and method of forming different high dielectric constant (high-K) gate dielectrics for different transistors on the same substrate, are disclosed. A first region includes a first transistor(s) on the substrate having a first gate structure having a first gate body over a first high-K gate dielectric. The first gate body and the first high-K gate dielectric have different widths defining a first width difference. A second region includes a second transistor(s) on the substrate having a second gate structure having a second gate body over a second high-K gate dielectric. The second gate body and the second high-K gate dielectric have different widths defining a second width difference. The first width difference is different than the second width difference, i.e., amongst transistors in the different regions. The different gate dielectric widths improve control of overlap capacitance of the transistors without increasing dopants or an annealing temperature.