公开(公告)号：EP4455746A1

公开(公告)日：2024-10-30

申请号：EP23199991.3

申请日：2023-09-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： DONEGAN, Keith ,  HOUGHTON, Thomas ,  BIAN, Yusheng ,  NUMMY, Karen ,  DEZFULIAN, Kevin ,  HIROKAWA, Takako

IPC: G02B6/136 ,  G02B6/30 ,  G02B6/12

Abstract: Structures including a cavity adjacent to an edge coupler and methods of forming such structures. The structure comprises a semiconductor substrate including a cavity with a sidewall, a dielectric layer on the semiconductor substrate, and an edge coupler on the dielectric layer. The structure further comprises a fill region including a plurality of fill features adjacent to the edge coupler. The fill region includes a reference marker at least partially surrounded by the plurality of fill features, and the reference marker has a perimeter that surrounds a surface area of the dielectric layer, and the surface area overlaps with a portion of the sidewall of the cavity.